Professor David Mowbray
School of Mathematical and Physical Sciences
Professor of Physics
d.mowbray@sheffield.ac.uk
+44 114 222 4561
+44 114 222 4561
E19, Hicks Building
Full contact details
Professor David Mowbray
School of Mathematical and Physical Sciences
E19
Hicks Building
Hounsfield Road
Sheffield
S3 7RH
School of Mathematical and Physical Sciences
E19
Hicks Building
Hounsfield Road
Sheffield
S3 7RH
- Profile
-
My research involves the application of a range of optical spectroscopic techniques to study physical processes in III-V semiconductors and related nanostructures and devices.
Particular interests are wide band gap materials (AlGaInP and (Al)InGaN) for visible and uv light emitters and quantum dots for high efficiency lasers and novel light emitters.
I was the first person to deduce the band structure of AlGaInP, a semiconductor now used as the basis for high efficiency red, orange and yellow LEDs and red lasers.
I have developed 1.3 um emitting lasers using InAs self-assembled quantum dots which exhibit extremely low operating currents and high temperature stability.
A recent project developed quantum dots lasers on Si substrates, providing the potential for the direct integration of III-V light emitters with Si CMOS electronics.
My current research is a joint project with colleagues at UCL and Warwick to grow and study quantum dots placed within quantum wires. This offers the prospect for high efficiency single photon sources and nanoscale lasers.
Career history
- PDRA Department of Physics, Oxford University 1987-1989
- Junior Research Fellow, Worcester College, Oxford University 1987-1989
- Alexander von Humboldt Fellow, Max Planck Institute, Stuttgart, Germany 1989-1990
- University Lecturer, Department of Physics, University of Sheffield 1991-1997
- EPSRC Advanced Fellowship, Department of Physics, University of Sheffield, 1994-1999
- Reader in Physics, Department of Physics, University of Sheffield, 1997-2005
- Professor of Physics, Department of Physics, University of Sheffield 2005-
- Qualifications
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- Physics BA (1981-1984, Hertford College, Oxford University)
- Physics DPhil (1984-1989, Hertford College, Oxford University)
- Research interests
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My recent research has focussed on the application of self-assembled quantum dots to produce high efficiency semiconductor lasers. Conventional semiconductor lasers have many desirable properties but their operating current (threshold current) can be high and this current typically increases rapidly with increasing temperature.
By using quantum dots as the light emitting region it is possible to reduce significantly both the operating current and the temperature sensitivity of this current.
By optimising the epitaxial growth myself and co-workers were able to produce InAs self-assembled quantum dots lasers emitting at 1.3 um with threshold current densities much smaller than comparable quantum well lasers and at the time the lowest ever reported. Later work applied p-type modulation doping to obtain high stability at room temperature.
More recently the ability of quantum dots to trap charges has been used to fabricated high performance lasers on Si substrates. Growth of III-V semiconductors on Si is very challenging as a large density of defects are produced at the Si / III-V interface.
These propagate to the light producing region of the device and significantly degrade its efficiency. By using quantum dots, which prevent carriers migrating to these defects, high light producing efficiency is possible.
Other work has used the capping of InAs quantum dots with a thin GaAsSb layer to extend the emission wavelength out to the main telecommunications band at 1.55 um.
My current work focuses on the study of a new type of quantum dot. These are grown within long nanowires that form from small holes made in an inert layer on a semiconductor substrate or metallic particles deposited on a semiconductor surface.
Unlike self-assembled quantum dots, which form at random position, these nanowire quantum dots can be made to form at pre-definied positions.
In addition there is considerably more control over their shape and size and it is possible to form stacks with a large number of identical dots, allowing the formation of nanoscale lasers.
The nanowire may act as an optical cavity to give very high light extraction for optical emitters. This project is a collaboration with University College London and the University of Warwick.
- Publications
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Show: Featured publications All publications
Featured publications
Journal articles
- Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement. Nano Letters, 21(13), 5722-5729.
- Self-formed quantum wires and dots in GaAsP-GaAsP core-shell nanowires. Nano Letters, 19(6), 4158-4165. View this article in WRRO
- Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.. ACS Nano, 13(5), 5931-5938. View this article in WRRO
- Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band. ACS Photonics, 4(7), 1740-1746. View this article in WRRO
- Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer. PHYS REV B, 80(16).
- Low threshold current density and negative characteristic temperature 1.3 mu m InAs self-assembled quantum dot lasers. APPL PHYS LETT, 90(11).
- 1.3 mu m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature. ELECTRON LETT, 42(16), 922-923.
- Infrared modulated interlevel spectroscopy of 1.3 mu m self-assembled quantum dot lasers using a free electron laser. APPL PHYS LETT, 88(8).
- 1.3 mu m InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. ELECTRON LETT, 40(22), 1412-1413.
- Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
- Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. PHYS REV B, 63(16).
- Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots. PHYS REV B, 6307(7).
- Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.. Phys Rev Lett, 84(4), 733-736.
- GALNP-ALGALNP BAND OFFSETS DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS. APPL PHYS LETT, 66(5), 619-621.
- ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
- Confined LO phonons in GaAs/AlAs superlattices. Physical Review B, 43(2), 1598-1603.
- Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra. Physical Review Letters, 58(20), 2130-2133.
All publications
Journal articles
- Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement. Nano Letters, 21(13), 5722-5729.
- Self-formed quantum wires and dots in GaAsP-GaAsP core-shell nanowires. Nano Letters, 19(6), 4158-4165. View this article in WRRO
- Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.. ACS Nano, 13(5), 5931-5938. View this article in WRRO
- Light-Emitting GaAs Nanowires on a Flexible Substrate. Nano Letters, 18(7), 4206-4213.
- Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band. ACS Photonics, 4(7), 1740-1746. View this article in WRRO
- Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1-8. View this article in WRRO
- In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express, 24(6), 6196-6202. View this article in WRRO
- Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots. Applied Physics Letters, 101(23).
- Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems. PHYSICAL REVIEW B, 85(3).
- Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems. Physical Review B - Condensed Matter and Materials Physics, 85(3).
- Energy states and carrier transport processes in metamorphic InAs quantum dots. Journal of Applied Physics, 112(3).
- Dark current mechanisms in quantum dot laser structures. J APPL PHYS, 109(11).
- Effect of modulation p-doping on the optical properties of quantum dot laser structure. AIP Conference Proceedings, 1328, 136-138.
- Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures. APPL PHYS LETT, 96(25).
- Control of Strain in GaSbAs/InAs/GaAs Quantum Dots. Journal of Physics: Conference Series, 245, 012065-012065.
- Electroluminescence studies of modulation p-doped quantum dot laser structures. IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
- Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. APPL PHYS LETT, 95(17).
- Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer. PHYS REV B, 80(16).
- Optical and microstructural studies of InGaN/GaN quantum dot ensembles. APPL PHYS LETT, 95(11).
- Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots. APPL PHYS LETT, 95(10).
- Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots. J APPL PHYS, 105(5). View this article in WRRO
- Optical spectroscopy of InGaN-GaN quantum dot ensembles. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2).
- Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE J QUANTUM ELECT, 45(1-2), 79-85. View this article in WRRO
- Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots. APPL PHYS LETT, 93(10).
- Excitonic spin lifetimes in InGaN quantum wells and epilayers. J APPL PHYS, 104(5).
- Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer. APPL PHYS LETT, 92(25).
- The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, 111-112.
- Structural analysis of life tested 1.3 mu m quantum dot. J APPL PHYS, 103(1).
- Systematic study of the. effects of modulation p-doping on 1.3-mu m quantum-dot lasers. IEEE J QUANTUM ELECT, 43(11-12), 1129-1139.
- InGaN/GaN quantum wells with low growth temperature GaN cap layers. J CRYST GROWTH, 307(2), 363-366.
- Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE J SEL TOP QUANT, 13(5), 1261-1266.
- Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells (vol 84, pg 3052, 2004). APPL PHYS LETT, 91(9).
- Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers. PHYS REV B, 76(8).
- Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. APPL PHYS LETT, 91(2).
- Reduced temperature sensitivity of lasing wavelength in near-1.3 mu m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer. ELECTRON LETT, 43(12), 670-672.
- Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer. APPL PHYS LETT, 90(21).
- Low threshold current density and negative characteristic temperature 1.3 mu m InAs self-assembled quantum dot lasers. APPL PHYS LETT, 90(11).
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
- Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers. Optics InfoBase Conference Papers.
- Role of device structure on the performance of quantum dot lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 435-436.
- Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 244(1), 82-86.
- Observation and modeling of a room-temperature negative characteristic temperature 1.3-mu m p-type modulation-doped quantum-dot laser. IEEE J QUANTUM ELECT, 42(11-12), 1259-1265.
- Temperature dependence of threshold current in p-doped quantum dot lasers. APPL PHYS LETT, 89(15).
- Time-resolved photoluminescence studies of carrier diffusion in GaN. APPL PHYS LETT, 89(7).
- p-doped 1.3 mu m InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. APPL PHYS LETT, 89(7).
- 1.3 mu m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature. ELECTRON LETT, 42(16), 922-923.
- Improved performance of 1.3-mu m In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers. IEEE PHOTONIC TECH L, 18(13-16), 1557-1559.
- Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing. PHYS REV B, 73(16).
- Exciton fine structure splitting in dot-in-a-well structures. APPL PHYS LETT, 88(13).
- Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection. APPL PHYS LETT, 88(11).
- The effect of p doping in InAs quantum dot lasers. APPL PHYS LETT, 88(11).
- Recombination mechanisms in 1.3-mu m InAs quantum-dot lasers. IEEE PHOTONIC TECH L, 18(5-8), 965-967.
- Infrared modulated interlevel spectroscopy of 1.3 mu m self-assembled quantum dot lasers using a free electron laser. APPL PHYS LETT, 88(8).
- Room-temperature 1.6 mu m light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. J APPL PHYS, 99(4).
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- Improved 1.3 μm In(Ga)As quantum dot lasers by engineering the GaAs spacer layers. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- The effect of p - Doping in in(Ga)as quantum dot lasers. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
- Auger recombination is NOT necessary to explain the temperature dependence of threshold in p-doped quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference, 155-156.
- Maximising the gain and minimising the non-radiative recombination in 1.3μm quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference, 75-76.
- Picosecond carrier dynamics in AllnGaN multiple quantum wells. APPL PHYS LETT, 87(23).
- Mechanism for improvements of optical properties of 1.3-mu m InAs/GaAs quantum dots by a combined InAlAs-InGaAs cap layer. J APPL PHYS, 98(8).
- The role of high growth temperature GaAs spacer layers in 1.3-mu m In(Ga)As quantum-dot lasers. IEEE PHOTONIC TECH L, 17(10), 2011-2013. View this article in WRRO
- Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 11(5), 1041-1047.
- Improved temperature performance of 1.31-mu m quantum dot lasers by optimized ridge waveguide design. IEEE PHOTONIC TECH L, 17(9), 1785-1787. View this article in WRRO
- New physics and devices based on self-assembled semiconductor quantum dots. J PHYS D APPL PHYS, 38(13), 2059-2076.
- Quantum-dot lasers close in on their quantum-well rivals. Laser Focus World, 41(6), 157-159.
- High-performance three-layer 1.3-mu m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE PHOTONIC TECH L, 17(6), 1139-1141. View this article in WRRO
- Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. APPL PHYS LETT, 86(14).
- Growth, fabrication, and operating characteristics of ultra-low threshold current density 1.3 mu m quantum dot lasers. JPN J APPL PHYS 1, 44(4B), 2520-2522.
- Gain saturation in InP/GaInP quantum-dot lasers. APPL PHYS LETT, 86(1).
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Optics InfoBase Conference Papers.
- Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m. 2005 European Quantum Electronics Conference, EQEC '05, 2005, 20.
- Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures. Quantum Electronics and Laser Science Conference (QELS), 3, 1938-1940.
- Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons. PHYS REV B, 70(19).
- Quantum-confined Stark shifts of charged exciton complexes in quantum dots. PHYS REV B, 70(20).
- 1.3 mu m InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. ELECTRON LETT, 40(22), 1412-1413.
- Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques. APPL PHYS LETT, 85(12), 2226-2228.
- Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold 1.31μm Quantum Dot Lasers. Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
- Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures. J APPL PHYS, 96(4), 1988-1992.
- Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
- Dynamics of coherent and incoherent spin polarizations in ensembles of quantum dots.. Phys Rev Lett, 93(5), 057401.
- Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells. APPL PHYS LETT, 84(16), 3052-3054.
- Temperature-induced carrier escape processes studied in absorption of individual InxGa1-xAs quantum dots. PHYS REV B, 69(15).
- Self-assembled semiconductor quantum dots: Fundamental physics and device a tipplications. ANNU REV MATER RES, 34, 181-218.
- 1.3 mu m lasers with AlInAs-capped self-assembled quantum dots. APPL PHYS LETT, 83(23), 4710-4712.
- Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots. PHYS REV B, 68(23).
- Engineering carrier confinement potentials in 1.3-mu m InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity. APPL PHYS LETT, 83(18), 3716-3718.
- Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers. J APPL PHYS, 93(6), 3524-3528.
- Optimizing the growth of 1.3 mu m InAs/InGaAs dots-in-a-well structure. J APPL PHYS, 93(5), 2931-2936.
- Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments. APPL PHYS LETT, 81(22), 4118-4120.
- Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots. PHYS REV B, 66(15).
- Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot. PHYS REV B, 66(4).
- Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement. APPL PHYS LETT, 81(1), 1-3.
- Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. APPL PHYS LETT, 80(20), 3769-3771.
- Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures. J PHYS D APPL PHYS, 35(7), 599-603.
- Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. Applied Physics Letters, 80(20), 3769-3771.
- Staircase-like dynamics of stimulated emission in InAs quantum dot amplifiers. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 74, 178-179.
- Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots. J APPL PHYS, 90(12), 6374-6378.
- Performance of lasers containing three, five and seven layers of quantum dots. IEE P-OPTOELECTRON, 148(5-6), 238-242.
- Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers. ELECTRON LETT, 37(20), 1220-1222.
- Intensity noise in quantum-dot laser diodes. APPL PHYS LETT, 78(23), 3577-3579.
- Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. PHYS REV B, 63(16).
- Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots. PHYS REV B, 63(16).
- Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 224(1), 123-127.
- Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots. PHYS REV B, 6307(7).
- Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots. APPL PHYS LETT, 77(26), 4344-4346.
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYS REV B, 62(24), 16784-16791.
- Quantum dots spot single photons. Physics World, 13(7), 27-28.
- Electronic structure of InAs-GaAs self-assembled quantum dots studied by perturbation spectroscopy. PHYSICA E, 6(1-4), 348-357.
- Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.. Phys Rev Lett, 84(4), 733-736.
- Intermode correlations in a quantum dot laser as a measure of inter-dot entanglement. Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
- Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers. J APPL PHYS, 87(1), 615-617.
- Gain characteristics of InAs/GaAs self-organized quantum-dot lasers. APPL PHYS LETT, 75(22), 3512-3514.
- Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. J APPL PHYS, 86(5), 2555-2561.
- Excited states and selection rules in self-assembled InAs/GaAs quantum dots. PHYS REV B, 60(4), R2185-R2188.
- Characterization of the effects of Al incorporation in AlGaInP light emitters. Physics and Simulation of Optoelectronic Devices VII.
- Observation of wire width fluctuations in the optical spectra of GaAs-AlGaAs V-groove quantum wires. APPL PHYS LETT, 73(23), 3420-3422.
- Nanostructure of ordering variants in (AlxGa1-x)(0.52)In0.48P grown on different vicinal GaAs substrates. APPL PHYS LETT, 73(12), 1679-1681.
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers. APPL PHYS LETT, 73(7), 969-971.
- Stimulated emission from localized states in partially ordered (AlxGa1-x)(0.52)In0.48P. APPL PHYS LETT, 72(7), 821-823.
- Optical properties of (AlxGa1-x)(0.52)In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor. J APPL PHYS, 83(4), 2241-2249.
- Magneto-optical studies of self-organized InAs/GaAs quantum dots. PHYS REV B, 57(4), R2073-R2076.
- In- and out-going resonant Raman scattering from the cavity polaritons of semiconductor quantum microcavities. PHYS REV B, 56(19), 12429-12433.
- Polarization-dependent phenomena in the reflectivity spectra of semiconductor quantum microcavities. PHYS REV B, 56(16), 10032-10035.
- Electrical and optical bistability in InxGa1-xAs-GaAs piezoelectric quantum wells. PHYS REV B, 55(24), 16045-16048.
- Emission mechanisms and band filling effects in GaAs-AlGaAs V-groove quantum wires. APPL PHYS LETT, 70(8), 993-995.
- Electrical and optical bistability in [111]GaInAs-GaAs piezo-electric quantum wells. SUPERLATTICE MICROST, 21(1), 113-118.
- Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots.. Phys Rev B Condens Matter, 54(24), 17738-17744.
- Electroluminescence spectroscopy of intervalley scattering and hot-hole transport in a GaAs/AlxGa1-xAs tunneling structure.. Phys Rev B Condens Matter, 54(7), 4472-4475.
- Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
- Hydrostatic-pressure determination of tensile-strained GaxIn1-xP-(AlyGa1-y)0.52In0.48P quantum-well band offsets.. Phys Rev B Condens Matter, 53(16), 10830-10836.
- Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices. MICROELECTR J, 26(8), 811-820.
- Observation of Wannier-Stark ladder transitions in InxGa1-xAs-GaAs piezoelectric superlattices.. Phys Rev B Condens Matter, 52(20), 14340-14343.
- BAND-GAP OF COMPLETELY DISORDERED GA0.52IN0.48P. APPL PHYS LETT, 66(23), 3185-3187.
- GALNP-ALGALNP BAND OFFSETS DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS. APPL PHYS LETT, 66(5), 619-621.
- Measurement of the direct energy gap of Al0.5In0.5P: Implications for the band discontinuity at Ga1-xInxP/AlyIn1-yP heterojunctions.. Phys Rev B Condens Matter, 50(15), 11190-11191.
- OPTICAL AND ELECTRICAL INVESTIGATION OF AN ASYMMETRIC STRAINED-LAYER DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE. SEMICOND SCI TECH, 9(9), 1608-1615.
- GROWTH AND CHARACTERIZATION OF (111)B INGAAS/GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES. J ELECTRON MATER, 23(9), 975-982.
- ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
- Optical properties of ordered and randomly disordered AlAs/GaAs short-period superlattices.. Phys Rev B Condens Matter, 49(16), 11173-11184.
- SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
- INDIRECT EXCITON ABSORPTION AND RAMAN-SCATTERING IN GAAS-ALGAAS SUPERLATTICES. SUPERLATTICE MICROST, 15(3), 317-320.
- MAGNETOOPTICAL STUDIES OF BALLISTIC ELECTRON-TRANSPORT IN SINGLE BARRIER HETEROSTRUCTURES. SUPERLATTICE MICROST, 15(4), 373-376.
- OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
- Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells.. Phys Rev B Condens Matter, 48(11), 8491-8494.
- TAILORING OF INTERNAL FIELDS IN INGAAS/GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS. APPL PHYS LETT, 63(6), 752-754.
- PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
- Longitudinal-optical phonon and shake-up excitations in the recombination spectra of semiconductor quantum wells.. Phys Rev B Condens Matter, 47(11), 6823-6826.
- Valence-band splitting in ordered Ga0.5In0.5P measured by polarized photoluminescence excitation spectroscopy.. Phys Rev B Condens Matter, 46(11), 7232-7235.
- Structural and vibrational properties of (InAs)m(GaAs)nstrained superlattices grown by molecular beam epitaxy. Journal of Applied Physics, 69(2), 786-792.
- Interface phonons in short-period GaAs/AlAs superlattices: Wave vector-selective and defect-activated. Solid State Communications, 79(3), 223-226.
- Picosecond and cw luminescence studies of CdTe/Cd1−xMnxTe MQWs. Journal of Luminescence, 48-49, 755-758.
- Raman scattering study of the electron-phonon coupling in GaInAs-InP quantum wells. Semiconductor Science and Technology, 5(1), 83-89.
- Vibrational study of mixed SiO2-GeO2 glasses. Journal of Molecular Structure, 219, 107-110.
- The structure of Al, Fe, K silica-germanate glasses investigated by Raman and infrared spectroscopy. Journal of Non-Crystalline Solids, 122(1), 1-9.
- Exciton-phonon interactions in quantum wells and superlattices. Journal of Luminescence, 44(4-6), 315-346.
- Polarisation studies of the luminescence of Zn1-xMnxTe in applied magnetic fields. Journal of Physics C: Solid State Physics, 21(31), L1065-L1068.
- ELECTRIC-FIELD-DEPENDENT PHOTOCONDUCTIVITY IN GAINAS-INP QUANTUM WELLS. APPL PHYS LETT, 53(9), 752-754.
- Screening of the exciton-LO phonon interaction in quantum wells. Superlattices and Microstructures, 4(4-5), 551-552.
- Raman scattering by GaInAs-InP quantum wells: effects of free carriers and impurities. Semiconductor Science and Technology, 2(12), 822-827.
- MAGNETOOPTICS OF (Ga, In) As QUANTUM WELLS : EXCITON BINDING ENERGIES AND CARRIER EFFECTIVE MASSES. Le Journal de Physique Colloques, 48(C5).
- Magneto-optical studies of GainAsInP quantum wells. Superlattices and Microstructures, 3(5), 471-475.
- Resonant Raman scattering in quantum wells. Superlattices and Microstructures, 3(1), 83-87.
- InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Applied Physics Letters, 51(1), 24-26.
- Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer. Nano Letters.
- Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates. The Journal of Physical Chemistry C.
- Time-resolved photoluminescence studies of carrier diffusion in Si-doped GaInN/GaN quantum wells. 2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666).
- Confined LO phonons in GaAs/AlAs superlattices. Physical Review B, 43(2), 1598-1603.
- Resonant Raman scattering in [111] GaAs/AlAs short-period superlattices. Physical Review B, 43(11), 9152-9157.
- Multiphonon resonant Raman scattering in short-period GaAs/AlAs superlattices. Physical Review B, 43(14), 11815-11824.
- Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra. Physical Review Letters, 58(20), 2130-2133.
- Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells. Physical Review B, 35(11), 5925-5928.
Chapters
- Inorganic Semiconductor Nanostructures, Nanoscale Science and Technology (pp. 130-202). John Wiley & Sons, Ltd
Conference proceedings papers
- GaAsP nanowires containing intentional and self-forming quantum dots. Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 1 February 2020 - 6 February 2020.
- Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2. International Semiconductor Laser Conference (ISLC) View this article in WRRO
- Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications. Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII View this article in WRRO
- Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications. Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
- Optical characterisation of catalyst free GaAsP and GaAsP core-shell nanowires grown directly on Si substrates by MBE. Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
- Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. MICROELECTRONICS JOURNAL, Vol. 40(3) (pp 533-536)
- The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs. OPTICAL AND QUANTUM ELECTRONICS, Vol. 40(14-15) (pp 1143-1148)
- Novel, Simple Model for High Temperature Stability of InAs/GaAs Self-assembled Quantum Dot Lasers with Optimum p-type Modulation Doping. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Development of Self-assembled Quantum Dot Lasers for Telecommunications Applications (Invited). Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- High-performance 1300-nm InAs/GaAs quantum-dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6909
- Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
- Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells. SUPERLATTICES AND MICROSTRUCTURES, Vol. 41(5-6) (pp 419-424)
- Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots. JOURNAL OF APPLIED PHYSICS, Vol. 101(8)
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Conference on Lasers and Electro-Optics, 2007, CLEO 2007
- Electro-optical characterization of self-assembled InAs/GaAs quantum rings embedded in P-i-N and Schottky diodes. AIP Conference Proceedings, Vol. 893 (pp 909-910)
- Systematic study of the effects of δ-p-doping on 1.3μm Dot-in-well lasers. Conference on Lasers and Electro-Optics Europe - Technical Digest
- Photon Coupling Mechanism in 1.3-mu m Quantum-Dot Lasers. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 2340-2341)
- GROWTH AND CHARACTERIZATION OF MULTI-LAYER 1.3 μm QUANTUM DOT LASERS. International Journal of Nanoscience, Vol. 06(03n04) (pp 291-296)
- Maximising the gain - Optimising the carrier distribution in InGaAs quantum dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6468
- Systematic study of the effects of modulation p-doping on 1.3 mu m InAs/GaAs dot-in-well lasers. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 517-520)
- Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection - art. no. 64710J. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, Vol. 6471 (pp J4710-J4710)
- Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. Physics of Semiconductors, Pts A and B, Vol. 893 (pp 951-952)
- High-performance 1.3 mu m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 280-283)
- Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 316-320)
- Fast spin relaxation in InGaN/GaN multiple quantum wells. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 243(7) (pp 1643-1646)
- Characterisation of modulation doped quantum dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6133
- 1.3 mu m emitting, self assembled quantum dot lasers. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 867-867)
- High-performance 1.3-mu m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature - art. no. 618417. Semiconductor Lasers and Laser Dynamics II, Vol. 6184 (pp 18417-18417)
- Stimulated emission and carrier dynamics in AlInGaN multi-quantum wells. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, Vol. 3(6) (pp 1958-1961)
- Optimizing the growth of 1.3-mu m InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
- Enhanced photoluminescence intensity of 1.3-mu m multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 129-132)
- Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 302-307)
- Lasing and spontaneous emission characteristics of 1.3 mu m In(Ga)As quantum-dot lasers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 382-385)
- Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2005 (pp 402-403)
- Growth and characterisation of multiple layer quantum dot lasers. Novel In-Plane Semiconductor Lasers IV, Vol. 5738 (pp 332-346)
- Physics and applications of self-assembled semiconductor quantum dots. Physics of Semiconductors, Pts A and B, Vol. 772 (pp 50-55)
- Growth and characterization of 1.3 mu m multi-layer quantum dots lasers incorporating high growth temperature spacer layers. Physics of Semiconductors, Pts A and B, Vol. 772 (pp 1547-1548)
- Recent developments in the physics and applications of self-assembled quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 155-163)
- Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 199-203)
- Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, 2004.
- Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference (pp 57-58)
- Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. OSA Trends in Optics and Photonics Series, Vol. 97 (pp 667-668)
- Optimization of gain in multilayer GaInP quantum dots. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2 (pp 695-696)
- Improved gain and loss performance of 1.3 mu m quantum dot lasers using high growth temperature GaAs Spacer layer. 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 212-213)
- Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, Vol. 5352 (pp 348-354)
- Carrier capture times in InGaN/GaN multiple quantum wells. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 240(2) (pp 364-367)
- Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots. MICROELECTRONICS JOURNAL, Vol. 34(5-8) (pp 667-669)
- Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 17(1-4) (pp 37-39)
- Carrier dynamics in red-emitting self-organised InAs-AlGaAs quantum dots with indirect barriers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 17(1-4) (pp 109-110)
- Optical properties of single charge tuneable InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 13(2-4) (pp 127-130)
- Optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 188(2) (pp 871-875)
- Excitation and relaxation mechanisms in single In(Ga)As quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 373-378)
- Recombination of many-particle states in InAs self-organized quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 409-412)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
- Optical spectroscopy of single InAs quantum dots: excitation and relaxation mechanisms. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1195-1196)
- Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy. PHYSICA E, Vol. 9(1) (pp 106-113)
- Bandgap renormalization and carrier relaxation in self-organized InAs quantum dots. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1131-1132)
- Electronic properties of InAs/GaAs self-assembled quantum dot structures and devices studied by photocurrent spectroscopy. ACTA PHYSICA POLONICA A, Vol. 98(3) (pp 279-293)
- InAs-GaAs self-assembled quantum dot lasers: physical processes and device characteristics. PHYSICA E, Vol. 7(3-4) (pp 489-493)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
- Dynamical band gap renormalization in self-organized InAs/GaAs quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 345-348)
- Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 269-275)
- The stark effect and electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots. OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, Vol. 81 (pp 337-346)
- Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152)
- Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots. PHYSICA B, Vol. 272(1-4) (pp 12-14)
- An optical study of the properties of (AlxGa1-x)(0.5)In0.49P epitaxial layers with varying composition, hydrostatic pressure and GaAs substrate orientation. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 66(1-3) (pp 126-130)
- Characterisation of the effects of Al incorporation in AlGaInP light emitters. COMPOUND SEMICONDUCTORS 1998(162) (pp 161-166)
- Effect of growth rate on the morphology and composition of InAs quantum dots grown on GaAs by MBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS(164) (pp 111-116)
- TEM nanoscale analysis of InAs quantum dots grown on GaAs by MBE. ELECTRON MICROSCOPY AND ANALYSIS 1999(161) (pp 585-588)
- Excited states in self-assembled InAs/GaAs quantum plots under high pressure. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 211(1) (pp 73-77)
- Magneto-optical spectroscopy of InAs/GaAs self-organised quantum dots. PHYSICA E, Vol. 2(1-4) (pp 689-693)
- Optical spectroscopy of GaAs-AlGaAs v-groove quantum wires. PHYSICA E, Vol. 2(1-4) (pp 949-953)
- TEM observations of the variation in the configuration of self-assembled InAs quantum dots on GaAs. ELECTRON MICROSCOPY 1998, VOL 3 (pp 371-372)
- Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
- Stimulated and spontaneous emission studies in ZnS1-xTex/ZnSe strain layer superlattices. JOURNAL OF CRYSTAL GROWTH, Vol. 159(1-4) (pp 689-693)
- Wannier-Stark ladder spectra in InxGa1-xAs-GaAs strained layer piezo-electric superlattices. SOLID-STATE ELECTRONICS, Vol. 40(1-8) (pp 167-170)
- Stark ladders in piezoelectric superlattices.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1775-1779)
- SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS/GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 645-648)
- FERMI SEA SHAKE-UP IN QUANTUM-WELL LUMINESCENCE SPECTRA. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 825-829)
- Optical properties and electroluminescence of ordered and disordered AlAs/GaAs superlattices. Materials Research Society Symposium Proceedings, Vol. 325 (pp 499-505)
- GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
- THE BAND-GAP OF PERFECTLY DISORDERED GA0.52IN0.48P. 12TH NREL PHOTOVOLTAIC PROGRAM REVIEW(306) (pp 529-537)
- Quantum Well Luminescence by Resonant Tunneling Injection of Electrons and Holes (pp 387-399)
- Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga0.52In0.48P. AIP Conference Proceedings
- GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser. International Conference on Molecular Bean Epitaxy
Preprints
- Anomalous Stark Shifts in Single Vertically Coupled Pairs of InGaAs
Quantum Dots, arXiv.
- Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement. Nano Letters, 21(13), 5722-5729.
- Grants
-
- EPSRC InAs quantum dot lasers on Si substrates April 2012 – March 2016
- Innovate UK Fibre wavelength quantum light sources July 2015 – September 2020
- EPSRC Self-catalysed GaAsP/GaAs nanowire quantum dots for silicon-based novel quantum emitters October 2016 – March 2020
- Teaching activities
-
Current
- PHY21005 Fourier Techniques
- PHY21005 Electromagnetism
- PHY340 Problem solving
- Year 2 Physics Tutor
- Head of Year 2 Physics
- Senior Tutor
Recent
- PHY119 Nanotechnology
- PHY251 Solids
Recent undergraduate projects supervised
- The physics of digital photography (year 3)
- The physics of projectiles (year 3)
- Environmental sensing with a Raspberry Pi (year 3)
- Development of a presentation to teach the topic of sound to primary school children (year 3)
- Developing experiments to demonstrate the properties of light (year 3)
- Optical spectroscopy of semiconductor nanowires incorporating quantum dots (year 4)
Schools outreach talks
- Electricity (primary school)
- Sound (primary school)
- Light (primary school)
- Electromagnetic spectrum (secondary / 6th Form)
- Nanotechnology (6th Form)
- Solar Energy (6th Form)
- Quantum Mechanics (6th Form)
- Professional activities and memberships
-
- Member of the Institute of Physics
- Member of Institute of Physics Degree Accreditation Committee
- External Member of Open University Qualifications and Assessment Committee 2016-2021
- External Examiner Newcastle University 2016-2020
- External Examiner University of St Andrews 2019-
Departmental administration
- Head of Teaching 2004-2012
- Head of Department 2006-2012, Jan-Dec 2017
- Chair Equality and Diversity Committee 2012-2016
- Coordinator Sheffield-Nanjing Technical University Materials Physics Joint Degree 2013-2020
- Senior Tutor 2018-
- Head of Year 2 Physics 2020-