Dr Im Sik Han
School of Electrical and Electronic Engineering
Research Associate in Semiconductor Epitaxy Integrated with Optical Lithography
Semiconductor Materials and Devices Research Group
- Profile
-
I received my MSc and PhD degree from the Department of Physics, Yeungnam University (Republic of Korea) in 2013 and 2017, respectively. From 2011 to 2016, I also worked on the molecular beam epitaxy (MBE) growth of III-V semiconductors at Korea Research Institute Standards and Science. After graduation, I worked as a postdoctoral researcher at Yeungnam University in 2017 and joined the University of Sheffield as a research associate.
My research is focused on the growth of III-V semiconductor nanostructures (quantum dots, nanowires, etc.) for optoelectronic devices using MBE.
- Publications
-
Journal articles
- Photonic crystal enhanced light emitting diodes fabricated by single pulse laser interference lithography. Journal of Applied Physics, 136(12).
- Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance. Journal of Vacuum Science & Technology A, 42(5).
- Low noise equivalent power InAs avalanche photodiodes for infrared few-photon detection. IEEE Transactions on Electron Devices. View this article in WRRO
- Investigation of junction electric fields for InAs quantum dot solar cells with photoreflectance spectroscopy. Current Applied Physics, 50, 46-52.
- Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics. Nanophotonics.
- Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology, 38(2).
- Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning. Applied Physics Letters, 118(14), 142101-142101.
- Direct patterning of periodic semiconductor nanostructures using single-pulse nanosecond laser interference. Optics Express, 28(22).
- Structural Optimization and Temperature-Dependent Electrical Characterization of GaAs Single-Junction Solar Cells. Journal of the Korean Physical Society, 76(12), 1096-1102.
- Formation of laterally ordered quantum dot molecules by in situ nanosecond laser interference. Applied Physics Letters, 116(20), 201901-201901.
- Tracing the two- to three-dimensional transition in InAs/GaAs sub-monolayer quantum dot growth. Applied Surface Science, 526, 146713-146713.
- Precise Arrays of Epitaxial Quantum Dots Nucleated by In Situ Laser Interference for Quantum Information Technology Applications. ACS Applied Nano Materials, 3(5), 4739-4746.
- Photoluminescence study of InAs/InGaAs sub-monolayer quantum dot infrared photodetectors with various numbers of multiple stack layers. Journal of Luminescence, 207, 512-519.
- Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems. Journal of the Korean Physical Society, 73(2), 190-202.
- Correction to: Electrical and optical characterizations of InAs/GaAs quantum dot solar cells. Applied Physics A, 124(3).
- Electrical and optical characterizations of InAs/GaAs quantum dot solar cells. Applied Physics A: Materials Science and Processing, 124(3). View this article in WRRO
- Origin of the Reduction in the Junction Electric Field of an InAs/GaAs Quantum-Dot Solar Cell. New Physics: Sae Mulli, 67(4), 425-431.
- Efficiency limit of InAs/GaAs quantum dot solar cells attributed to quantum dot size effects. Solar Energy Materials and Solar Cells, 155, 70-78.
- Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure. Current Applied Physics, 16(5), 587-592.
- Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell. Current Applied Physics, 15(11), 1318-1323.
- Optically biased photoreflectance spectroscopy of a GaAs epitaxial layer and an AlGaAs/GaAs quantum well. Current Applied Physics, 15(10), 1226-1229.
- Temperature dependence of the photovoltage from Franz-Keldysh oscillations in a GaAs p+-i-n+ structure. Journal of the Korean Physical Society, 67(5), 916-920.
- Evaluation of the photo-generated carrier density of GaAs solar cells by using electrical and optical biased electroreflectance spectroscopy. Journal of the Korean Physical Society, 67(4), 723-727.
- Investigation of internal electric fields in GaAs solar cell under highly-concentrated light. Journal of the Korean Physical Society, 66(4), 667-671.
- Evaluation of the junction’s electric field and the ideality factor of GaAs p-n junction solar cells by using photoreflectance spectroscopy. Journal of the Korean Physical Society, 64(7), 1031-1035.
- Optical and electrical properties of InAs/GaAs quantum-dot solar cells. Journal of the Korean Physical Society, 64(6), 895-899.
- Influence of Carrier Trap in InAs/GaAs Quantum-Dot Solar Cells. Journal of the Korean Vacuum Society, 22(1), 37-44.
- Investigation of Localized Electric Field distributions in InAs/GaAs Quantum Dots by Using Photoreflectance Spectroscopy. New Physics: Sae Mulli, 62(2), 227-232.
- In-Situ Pulsed Laser Interference Nanostructuring of Semiconductor Sur-faces. Journal of Laser Micro/Nanoengineering.
Conference proceedings papers
- Surface Nano-Structuring of Semiconductors by Nanosecond Pulsed Laser Interference. 2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 31 July 2023 - 4 August 2023.
- Directed self-assembly of InAs quantum dots using in situ interference lithography. Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 1 February 2020 - 6 February 2020.
- In-situ laser interference patterning of MBE growth surfaces. Laser-based Micro- and Nanoprocessing XIV, 1 February 2020 - 6 February 2020.
- Fabrication of sub-micrometer periodic nanostructures using pulsed laser interference for efficient light trapping in optoelectronic devices. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXV, 1 February 2020 - 6 February 2020.
- Photonic crystal enhanced light emitting diodes fabricated by single pulse laser interference lithography. Journal of Applied Physics, 136(12).