Professor Mark Hopkinson
PhD, BSc
School of Electrical and Electronic Engineering
Departmental Director of Research & Innovation
Professor in Electrical Engineering
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+44 114 222 5385
Full contact details
School of Electrical and Electronic Engineering
- Profile
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I received my BSc degree from the University of Birmingham and my PhD from the University of Sheffield for a thesis entitled “Properties of hydrogenated Amorphous Silicon Nanostructures”).
After three years as a PDRA at the University of Warwick working on SiGe epitaxy, I returned to Sheffield in 1990 to join the EPSRC National Centre for III–V Technologies, first as a PDRA and then as research fellow.
In 1988 I spent a half year working as a visiting researcher at the University of Minnesota. In 2000 I joined Marconi PLC as a senior scientist working on GaAs microwave devices.
In 2003, I returned to the University of Sheffield as a senior research fellow (staff) and in 2007 was awarded a personal chair.
My research is focussed on semiconductor epitaxy; a field in which I have published over 500 papers, made over 200 conference presentations, over 30 invited talks, produced several book chapters and a few editorials.
Around 15 of my publications have 100 citations. For over a decade I have served on the major conference steering committees in my field.
I have also received two international awards: a Pierre de Fermat fellowship from France and the Huang Kun Medal from the Beijing Institute of Semiconductors.
Starting with silicon MBE at Warwick University, I moved on to work on III-V materials from 1990 onwards and now have almost 30 years’ experience in MBE with particular emphasis on III-V semiconductor nanostructuring (including quantum dots, nanowires, selective area growth etc)
My current research interests include novel electronic materials, semiconductor nanostructures, electronics-photonics integration, ultrafast photonic devices and the application of photonics for sensing and healthcare applications.
Recent work has focussed on methods for the in-situ patterning of semiconductors, work which includes the EU Horizon 2020 project “Nanostencil” which I am coordinating.
The project is focused on the application of laser interference lithography to pattern semiconductor surfaces during the growth process. Other areas of activity include high speed semiconductor optical switching and novel quantum photonic devices.
- Qualifications
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- PhD (Physics), Sheffield (1990)
- BSc (Physics), Birmingham (1984)
- Research interests
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- Semiconductor Epitaxy (MBE)
- New methods for the growth, processing and characterisation of III-V nanostructures for
advanced photonic and electronic devices - Ultrafast photonic devices
- Publications
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Books
Journal articles
- Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection. IEEE Transactions on Electron Devices, 1-6.
- Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology, 38(2).
- Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning. Applied Physics Letters, 118(14), 142101-142101.
- Photonic integration of uniform GaAs nanowires in hexagonal and honeycomb lattice for broadband optical absorption. AIP Advances, 10(10).
- Formation of laterally ordered quantum dot molecules by in situ nanosecond laser interference. Applied Physics Letters, 116(20), 201901-201901.
- Tracing the two- to three-dimensional transition in InAs/GaAs sub-monolayer quantum dot growth. Applied Surface Science, 526, 146713-146713.
- Precise Arrays of Epitaxial Quantum Dots Nucleated by In Situ Laser Interference for Quantum Information Technology Applications. ACS Applied Nano Materials, 3(5), 4739-4746.
- Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications. Scientific Reports, 10(1). View this article in WRRO
- Optical frequency comb generation via cascaded intensity and phase photonic crystal modulators. IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
- Control of quality factor in laterally coupled vertical cavities. IET Optoelectronics, 14(3), 100-103.
- Photonic crystal cavity-based intensity modulation for integrated optical frequency comb generation. Crystals, 9(10). View this article in WRRO
- Pulse control protocols for preserving coherence in dipolar-coupled nuclear spin baths. Nature Communications, 10(1). View this article in WRRO
- Generation of optical frequency combs using a photonic crystal cavity. IET Optoelectronics, 13(1), 23-26. View this article in WRRO
- Thermodynamic processes on a semiconductor surface during in-situ multi-beam laser interference patterning. IET Optoelectronics, 13(1), 7-11. View this article in WRRO
- Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination. Advanced Materials, 30(21). View this article in WRRO
- Quantum Dots: Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination (Adv. Mater. 21/2018). Advanced Materials, 30(21), 1870147-1870147.
- A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides. Microelectronic Engineering, 174, 16-19. View this article in WRRO
- Photoluminescence upconversion at interfaces driven by a sequential two-photon absorption mechanism. Physical Review B, 93(23). View this article in WRRO
- Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb nuclear magnetic resonance spectroscopy. Nature Physics, 12(7), 688-693. View this article in WRRO
- Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain. Nature Communications, 6. View this article in WRRO
- Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes. Applied Physics Letters, 104(24).
- How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy. Journal of Materials Science, 49(11), 3898-3908. View this article in WRRO
- Enhancement of activation energies of sharp photoluminescence lines for GaInNAs quantum wells due to quantum confinement. Journal of Physics D: Applied Physics, 46(40).
- III-V semiconductor devices integrated with silicon. Semiconductor Science and Technology, 28(9).
- From the artificial atom to the Kondo-Anderson model: Orientation-dependent magnetophotoluminescence of charged excitons in InAs quantum dots. Physical Review B, 87(20). View this article in WRRO
- Gain characteristic of dilute nitride HELLISH-VCSOA for 1.3 μm wavelength operation. Physica Status Solidi (C) Current Topics in Solid State Physics, 10(4), 564-566.
- Dual-state absorber-photocurrent characteristics and bistability of two-section quantum-dot lasers. IEEE Journal on Selected Topics in Quantum Electronics, 19(5).
- Photonic crystal nanocavities in GaAs/AlGaAs with oxidised bottom cladding. Photonics and Nanostructures - Fundamentals and Applications.
- Electrical modulation of the optical properties of mid-infrared metamaterials. Applied Physics Letters, 101(25).
- Polarization-resolved resonant fluorescence of a single semiconductor quantum dot. Applied Physics Letters, 101(25).
- InAsP-based quantum wells as infrared pressure gauges for use in a diamond anvil cell. Journal of Applied Physics, 112(7).
- Polariton states bound to defects in GaAs/AlAs planar microcavities. Physical Review B, 85(16). View this article in WRRO
- Intra-cavity absorber photocurrent characteristics of a quantum dot laser emitting on two emission-states: Experiment and simulation. Proceedings of SPIE - The International Society for Optical Engineering, 8432.
- Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots. Journal of Applied Physics, 111(8).
- Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot. Physical Review Letters, 108(11).
- In-plane interdot carrier transfer in InAs/GaAs quantum dots. Applied Physics Letters, 100(15).
- Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells. PHYS REV B, 84(4).
- Observation of phase shifts in a vertical cavity quantum dot switch. APPL PHYS LETT, 98(23).
- Thermal quenching of single localized excitons in GaInNAs layers. APPL PHYS LETT, 98(13).
- GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation. NANOSCALE RES LETT, 6. View this article in WRRO
- Direct evidence of long lived trapped carriers in InGaAs/GaAs quantum dots studied using terahertz-activated luminescence measurements. AIP Conference Proceedings, 1399, 593-594.
- Deep levels in H-irradiated GaAs
1-x Nx (x < 0.01) grown by molecular beam epitaxy. Journal of Applied Physics, 110(12). - 3D g-factor mapping: Fine structure effects in single quantum dots. AIP Conference Proceedings, 1399, 441-442.
- Micro-photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(5), 1655-1658.
- Extended ground-state and excited-state emission-state control in a mode-locked two-section quantum dot laser. International Conference on Transparent Optical Networks.
- Robust optical inversion of the excitonic population of InGaAs quantum dots via adiabatic rapid passage. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
- Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser. OPT COMMUN, 283(24), 5092-5098.
- Electrical control of fine-structure splitting in self-assembled quantum dots for entangled photon pair creation. APPL PHYS LETT, 97(22).
- Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity. IEEE J QUANTUM ELECT, 46(11), 1582-1589.
- Splitting and lasing of whispering gallery modes in quantum dot micropillars.. Opt Express, 18(21), 22578-22592.
- Strongly coupled single quantum dot in a photonic crystal waveguide cavity. APPL PHYS LETT, 97(11).
- Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation. Journal of Physics: Conference Series, 245(1). View this article in WRRO
- Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser. APPL PHYS LETT, 97(7).
- Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots. APPL PHYS LETT, 97(3).
- Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers. PHYS REV LETT, 104(25).
- Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector. APPL PHYS LETT, 96(15).
- Quantum key distribution system in standard telecommunications fiber using a short wavelength single photon source. J APPL PHYS, 107(7).
- Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes.. Opt Express, 18(7), 7055-7063.
- Two step optimized process for scanning tunneling microscopy tip fabrication. J VAC SCI TECHNOL B, 28(2), 371-375.
- High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 mu m. ELECTRON LETT, 46(4), 295-U49.
- State-switched modelocking of two-segment quantum dot laser via self-electro-optical quantum dot absorber. ELECTRON LETT, 46(2), 161-U87.
- Reverse ground-state excited-state emission transition dynamics in two-section quantum dot semiconductor lasers: Simultaneous two-state mode-locking and state-switching via a resistor self-electro-optic effect device (SEED). Conference Digest - IEEE International Semiconductor Laser Conference, 65-66.
- Control of strain in GaSbAs/InAs/GaAs quantum dots. Journal of Physics: Conference Series, 244.
- Two-state passive mode-locking of quantum dot semiconductor lasers: Classical state scenario and novel reverse state dynamics. 2010 12th International Conference on Transparent Optical Networks, ICTON 2010.
- Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices. Proceedings of SPIE - The International Society for Optical Engineering, 7610.
- Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: Mode-locking and state-switching. Proceedings of SPIE - The International Society for Optical Engineering, 7720.
- All-optical switch using InAs quantum dots in a vertical cavity. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 249-252.
- Strongly coupled single quantum dot in a photonic crystal waveguide cavity. Applied Physics Letters, 97(11).
- Electroluminescence studies of modulation p-doped quantum dot laser structures. IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
- Quantitative investigation of the onset of islanding in strained layer epitaxy of InAs/GaAs by X-ray mapping in STEM. Journal of Physics: Conference Series, 209.
- InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope. Journal of Physics: Conference Series, 209.
- Temperature dependence of Ga-assisted oxide desorption on GaAs(001). Journal of Physics: Conference Series, 209.
- Quantum dot superluminescent diodes for optical coherence tomography: Skin imaging. IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 748-754.
- Quantum dot superluminescent diodes for optical coherence tomography: Device engineering. IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 1015-1022. View this article in WRRO
- Cryogenic confocal microscopy with rotation in a magnetic field. REV SCI INSTRUM, 81(1).
- Direct imprinting of SiO
2 waveguide structures on GaAs and its application in InAs/GaAs quantum dot intermixing. International Journal of Nanoscience, 8(1-2), 107-111. - InAs/GaAs(001) wetting layer formation observed in situ by concurrent MBE and STM. SURF SCI, 603(24), 3439-3444.
- Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. APPL PHYS LETT, 95(17).
- Thermal runaway and optical efficiency in InAs/GaAs quantum dot lasers. APPL PHYS LETT, 95(14).
- As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy. J CRYST GROWTH, 311(20), 4478-4482.
- Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer. PHYS REV B, 80(16).
- Voltage-controlled motional narrowing in a semiconductor quantum dot. NEW J PHYS, 11.
- Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs. PHYS REV B, 80(12).
- Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole. SOLID STATE COMMUN, 149(35-36), 1458-1465. View this article in WRRO
- GaAs(001) (2 x 4) to c(4 x 4) transformation observed in situ by STM during As flux irradiation. SURF SCI, 603(16), 2398-2402.
- Correlation between defect density and current leakage in InAs/GaAs quantum dot-in-well structures. J APPL PHYS, 106(2).
- Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity. APPL PHYS LETT, 95(2).
- Beating of exciton-dressed states in a single semiconductor InGaAs/GaAs quantum dot.. Phys Rev Lett, 102(20), 207401. View this article in WRRO
- Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilizing a Multicontact Device Incorporating Wavelength-Modulated Quantum Dots. IEEE J SEL TOP QUANT, 15(3), 757-763.
- Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer. IEEE J SEL TOP QUANT, 15(3), 819-827. View this article in WRRO
- Tailoring the electrical conductivity of GaAs by nitrogen incorporation. J PHYS-CONDENS MAT, 21(17).
- Multi-section quantum dot superluminescent diodes for spectral shape engineering. IET OPTOELECTRONICS, 3(2), 100-104.
- Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode. MICROELECTRONICS JOURNAL, 40(3), 588-591.
- Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots. J APPL PHYS, 105(5). View this article in WRRO
- Voltage-controlled nuclear polarization switching in a single InxGa1-xAs quantum dot. PHYS REV B, 79(12).
- lambda similar to 3.1 mu m room temperature InGaAs/AlAsSb/InP quantum cascade lasers. APPL PHYS LETT, 94(3).
- Quantum dots in a vertical cavity for all-optical switching devices. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 406-407.
- Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(6), 1441-1444.
- High power performances of broad bandwidths superluminescent diodes (SLDs) based on chirped-quantum-dot structures operating at 1100 and 1200 nm for optical coherence tomography (OCT) applications. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- Controlling the coherence properties of quantum dot superluminescent light emitting diodes via frequency selective optical feedback. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- Joint theoretical and experimental investigations of the cw lasing and turn-on dynamics of a quantum-dot semiconductor laser. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(12), 2652-2654.
- Carrier escape dynamics in multilayered self-assembled InAs/GaAs quantum dots. AIP Conference Proceedings, 1199, 293-294.
- Cavity-enhanced polarization control and observation of off-resonant coupling in quantum dot nanocavities. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
- Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE J QUANTUM ELECT, 45(1-2), 79-85. View this article in WRRO
- Electron coherence length and mobility in highly mismatched III-N-V alloys. APPL PHYS LETT, 93(25).
- Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels. APPL PHYS LETT, 93(16).
- Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots. APPL PHYS LETT, 93(10).
- Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy. APPL PHYS LETT, 93(8).
- Selective disordering of InAs/InGaAs dots-in-a-well structure patterned with sol-gel derived SiO2 strips imprinted by soft mold technique. APPL PHYS LETT, 93(7).
- Nuclear spin pumping under resonant optical excitation in a quantum dot. APPL PHYS LETT, 93(7).
- Two-qubit conditional quantum-logic operation in a single self-assembled quantum dot. PHYS REV B, 78(7).
- The evolution of Ga and As core levels in the formation of Fe/GaAs(001): A high resolution soft x-ray photoelectron spectroscopic study. J APPL PHYS, 104(2).
- High field electron dynamics in dilute nitride Ga(AsN). APPL PHYS LETT, 93(2).
- Origin of temperature-dependent threshold current in p-doped and undoped In(Ga)As quantum dot lasers (Invited paper). IEEE J SEL TOP QUANT, 14(4), 1162-1170.
- Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer. APPL PHYS LETT, 92(25).
- Fast optical preparation, control, and readout of a single quantum dot spin.. Phys Rev Lett, 100(19), 197401. View this article in WRRO
- Anomalous photocurrent self-assembled InAs/GaAs quantum dots. APPL PHYS LETT, 92(18).
- Low-threshold 1.3-mu m GaInNAs quantum-well lasers using quaternary-barrier structures. IEEE PHOTONIC TECH L, 20(9-12), 942-944.
- A quantum dot swept laser source based upon a multisection laser device. JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2965-2967.
- Electron effective mass and Si-donor binding energy in GaAs1-xNx probed by a high magnetic field. PHYS REV B, 77(12).
- Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots. PHYS REV B, 77(12).
- Two photon absorption in quantum dot-in-a-well infrared photodetectors. APPL PHYS LETT, 92(2).
- Comprehensive RF-domain spectral- and time-domain analysis of passively mode-locked two-section quantum-dot lasers emitting at 1.3 μm. Proceedings of SPIE - The International Society for Optical Engineering, 6997.
- The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, 111-112.
- High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells. Microscopy and Microanalysis, 14(SUPPL. 2), 318-319.
- Intersublevel polaron dephasing in self-assembled quantum dots. PHYS REV B, 77(4).
- Structural analysis of life tested 1.3 mu m quantum dot. J APPL PHYS, 103(1).
- Energy level structure and electron relaxation times in InAs/InxGa1-xAs quantum dot-in-a-well structures. APPL PHYS LETT, 91(25).
- Polarized quantum dot emission from photonic crystal nanocavities studied under moderesonant enhanced excitation.. Opt Express, 15(25), 17221-17230.
- Systematic study of the. effects of modulation p-doping on 1.3-mu m quantum-dot lasers. IEEE J QUANTUM ELECT, 43(11-12), 1129-1139.
- Magnetic field tuning of hot electron resonant capture in a semiconductor device. APPL PHYS LETT, 91(14).
- Tuning the photoresponse of quantum dot infrared photodetectors across the 8-12 mu m atmospheric window via rapid thermal annealing. APPL PHYS LETT, 91(14).
- Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors. J PHYS D APPL PHYS, 40(18), 5537-5540.
- All semiconductor swept laser source utilizing quantum dots. APPL PHYS LETT, 91(12).
- Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE J SEL TOP QUANT, 13(5), 1261-1266.
- High-power and broadband quantum dot superluminescent diodes centered at 1250 nm for optical coherence tomography. IEEE J SEL TOP QUANT, 13(5), 1267-1272.
- Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes. APPL PHYS LETT, 91(8).
- Control of polarization and mode mapping of small volume high Q micropillars. J APPL PHYS, 102(4). View this article in WRRO
- Whispering gallery resonances in semiconductor micropillars. APPL PHYS LETT, 91(7).
- Singlet and triplet polaron relaxation in doubly charged self-assembled quantum dots. NEW J PHYS, 9.
- Z-contrast Imaging Analysis of Semiconductor Epitaxies: Application to GaNAs Quantum Wells and InAs/GaInAs/GaAs Dot in Well Structures. Microscopy and Microanalysis, 13(S02).
- Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers. PHYS REV B, 76(8).
- Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
- Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions. APPL PHYS LETT, 91(5).
- Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. APPL PHYS LETT, 91(2).
- Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering. J APPL PHYS, 102(1).
- Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials. J VAC SCI TECHNOL B, 25(4), 1197-1202.
- Nonradiative recombination in. multiple layer In(Ga)As quantum-dot lasers. IEEE J QUANTUM ELECT, 43(7-8), 698-703.
- Mode structure of the L3 photonic crystal cavity. APPL PHYS LETT, 90(24).
- Reduced temperature sensitivity of lasing wavelength in near-1.3 mu m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer. ELECTRON LETT, 43(12), 670-672.
- Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer. APPL PHYS LETT, 90(21).
- Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching. ELECTRON LETT, 43(10), 587-589.
- Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
- High Q modes in elliptical microcavity pillars. APPL PHYS LETT, 90(16).
- Effects of alloy intermixing on the lateral confinement potential in InAs/GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy. APPL PHYS LETT, 90(16).
- InGaAs/AlAsSb/InP strain compensated quantum cascade lasers. APPL PHYS LETT, 90(15).
- Dynamics of carriers photogenerated in a dot-in-a-well nanostructure. LASER PHYS, 17(4), 305-309.
- Molecular beam epitaxial growth of high power quantum dot super-luminecent diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2418-2420.
- Zero and controllable linewidth enhancement factor in p-doped 1.3 mu m quantum dot lasers. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2421-2423.
- Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs. J APPL PHYS, 101(6).
- Low threshold current density and negative characteristic temperature 1.3 mu m InAs self-assembled quantum dot lasers. APPL PHYS LETT, 90(11).
- Magnetophonon oscillations in the negative differential conductance of dilute nitride GaAs1-xNx submicron diodes. PHYS REV B, 75(11).
- Coherent response of a quantum dot exciton driven by a rectangular spectrum optical pulse. PHYS REV B, 75(11).
- Double transit region Gunn diodes. SEMICOND SCI TECH, 22(3), 245-248.
- Broadband quantum cascade laser emitting from 7.7 to 8.4 mu m operating up to 340 K. J APPL PHYS, 101(4).
- All-optical switching in quantum cascade lasers. APPL PHYS LETT, 90(5).
- Single photon sources based upon single quantum dots in semiconductor microcavity pillars. J MOD OPTIC, 54(2-3), 453-465.
- Nuclear spin switch in semiconductor quantum dots.. Phys Rev Lett, 98(2), 026806. View this article in WRRO
- InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 mu m. APPL PHYS LETT, 90(2).
- Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Conference on Lasers and Electro-Optics, 2007, CLEO 2007.
- Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity. Physical Review B - Condensed Matter and Materials Physics, 76(7).
- Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- Kinetic considerations on the phase separation of GaInNAs quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics, 4(4), 1477-1480.
- High-quality-factor WG modes in semiconductor microcavity pillars with circular and elliptical cross section. Proceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007, 4, 170-172.
- Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- CQED-enhanced single photon sources from InGaAs quantum dots. Conference on Lasers and Electro-Optics Europe - Technical Digest.
- Fast intraband capture and relaxation in InAs/GaAs self-assembled quantum dots. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- Role of device structure on the performance of quantum dot lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 435-436.
- Modes of the L3 defect cavity in InAs quantum dot photonic crystals. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
- Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. Optics Letters, 32(1), 44-46.
- Avalanche multiplication in InAlAs. IEEE T ELECTRON DEV, 54(1), 11-16.
- High-power 1.3-mu m quantum-dot superluminescent light-emitting diode grown by molecular beam epitaxy. IEEE PHOTONIC TECH L, 19(2-4), 109-111.
- Gain in p-doped quantum dot lasers. J APPL PHYS, 101(1).
- Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x < 1%) stepped quantum well. APPL PHYS LETT, 89(26).
- Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy. J CRYST GROWTH, 297(1), 38-43.
- The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface. MICROELECTRONICS JOURNAL, 37(12), 1505-1510.
- Photoluminescence beyond 1.5 mu m from InAs quantum dots. MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
- Design, growth, fabrication, and characterization of InAs/GaAs 1.3 mu m quantum dot broadband superluminescent light emitting diode. J APPL PHYS, 100(10).
- Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction. J APPL PHYS, 100(9).
- Observation and modeling of a room-temperature negative characteristic temperature 1.3-mu m p-type modulation-doped quantum-dot laser. IEEE J QUANTUM ELECT, 42(11-12), 1259-1265.
- Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs/GaAs quantum wells based on time-resolved pump and probe differential photoluminescence. APPL PHYS LETT, 89(18).
- Coherent near-infrared wavelength conversion in semiconductor quantum cascade lasers. APPL PHYS LETT, 89(18).
- Temperature dependence of threshold current in p-doped quantum dot lasers. APPL PHYS LETT, 89(15).
- Optical study of resonant states in GaNxAs1-x. SEMICONDUCTORS+, 40(10), 1162-1164.
- Intraband magnetospectroscopy of singly and doubly charged n-type self-assembled quantum dots. PHYS REV B, 74(16).
- Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping. J APPL PHYS, 100(6).
- p-doped 1.3 mu m InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. APPL PHYS LETT, 89(7).
- 1.34 mu m GaInNAs quantum well lasers with low room-temperature threshold current density. ELECTRON LETT, 42(16), 923-924.
- 1.3 mu m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature. ELECTRON LETT, 42(16), 922-923.
- Integration of a resonant tunneling diode and an optical communications laser. IEEE PHOTONIC TECH L, 18(13-16), 1518-1520.
- Improved performance of 1.3-mu m In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers. IEEE PHOTONIC TECH L, 18(13-16), 1557-1559.
- Intra-valence band transitions in self-assembled InAs/GaAs quantum dots studied using photocurrent spectroscopy. J APPL PHYS, 100(1).
- Strong effect of resonant impurities on Landau-level quantization. PHYS REV LETT, 96(23).
- Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices. APPL PHYS LETT, 88(19).
- Effects of growth temperature on the structural and optical properties of 1.6 mu m GaInNAs/GaAs multiple quantum wells. APPL PHYS LETT, 88(19).
- Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells. JPN J APPL PHYS 1, 45(4A), 2542-2545.
- Exciton fine structure splitting in dot-in-a-well structures. APPL PHYS LETT, 88(13).
- Broadband 6 mu m
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- Recombination mechanisms in 1.3-mu m InAs quantum-dot lasers. IEEE PHOTONIC TECH L, 18(5-8), 965-967.
- Infrared modulated interlevel spectroscopy of 1.3 mu m self-assembled quantum dot lasers using a free electron laser. APPL PHYS LETT, 88(8).
- Room-temperature 1.6 mu m light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. J APPL PHYS, 99(4).
- Control of polarized single quantum dot emission in high-quality-factor microcavity pillars. APPL PHYS LETT, 88(5).
- Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells. Microscopy and Microanalysis, 12(SUPPL. 2), 754-755.
- High power and very low noise operation at 1.3 and 1.5 μm with quantum dot and quantum dash Fabry-Pérot lasers for microwave links. Proceedings of SPIE - The International Society for Optical Engineering, 6399.
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- High Q values and polarised emission from microcavity pillars with elliptical cross-section. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006.
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- Observation of ultrahigh quality factor in a semiconductor microcavity. APPL PHYS LETT, 86(19).
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- Growth, fabrication, and operating characteristics of ultra-low threshold current density 1.3 mu m quantum dot lasers. JPN J APPL PHYS 1, 44(4B), 2520-2522.
- Dynamics of the wetting-layer-quantum-dot interaction in InGaAs self-assembled systems. IEEE J QUANTUM ELECT, 41(3), 344-350.
- Enhanced optical and structural properties of 1.3 mu m GaInNAs/GaAs multiple quantum-well heterostructures with stepped strain-mediating layers. APPL PHYS LETT, 86(6).
- Time-resolved photoluminescence measurements of in As self-assembled quantum dots. Proceedings of SPIE - The International Society for Optical Engineering, 5725, 309-317.
- Dilute nitride Ga(AsN) alloys: An unusual band structure probed by magneto-tunneling. AIP Conference Proceedings, 772, 267-270.
- Determination of InAsP/InP and InGaAs/InP band offsets using blue shifting type II asymmetric multiple quantum wells. AIP Conference Proceedings, 772, 977-978.
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- Influence of structure and defects on the performance of dot-in-well laser structures. Proceedings of SPIE - The International Society for Optical Engineering, 5840 PART II, 486-497.
- Integration of a resonant tunneling diode and an optical communications laser. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005, 129-130.
- Recombination processes in InAs quantum dot lasers containing high growth temperature spacer layers operating at 1.3 m. 2005 European Quantum Electronics Conference, EQEC '05, 2005, 20.
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- Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy. J APPL PHYS, 97(1).
- Optical characteristics of 1.55 mu m GaInNAs multiple quantum wells. APPL PHYS LETT, 85(18), 4013-4015.
- Influence of composition on the piezoelectric effect and on the conduction band energy levels of InxGa1-xAs/GaAs quantum dots. J APPL PHYS, 96(9), 5169-5172.
- Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons. PHYS REV B, 70(19).
- Quantum-confined Stark shifts of charged exciton complexes in quantum dots. PHYS REV B, 70(20).
- InGaAs/AlAsSb quantum cascade lasers. APPL PHYS LETT, 85(18), 3992-3994.
- 1.3 mu m InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. ELECTRON LETT, 40(22), 1412-1413.
- Intraband relaxation via polaron decay in InAs self-assembled quantum dots. PHYS REV B, 70(16).
- Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques. APPL PHYS LETT, 85(12), 2226-2228.
- Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy. J CRYST GROWTH, 270(1-2), 62-68.
- Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1-x alloys. APPL PHYS LETT, 85(9), 1550-1552.
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- Electron spectroscopy of dilute nitrides. J PHYS-CONDENS MAT, 16(31), S3201-S3214.
- Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
- Dynamics of coherent and incoherent spin polarizations in ensembles of quantum dots.. Phys Rev Lett, 93(5), 057401.
- Fuchs-Kliewer phonon excitations in GaNAs alloys. J APPL PHYS, 95(12), 8466-8468.
- Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations. J APPL PHYS, 95(12), 7584-7587.
- Mode formation in broad area quantum dot lasers at 1060 mn. OPT COMMUN, 235(4-6), 387-393.
- Temperature-induced carrier escape processes studied in absorption of individual InxGa1-xAs quantum dots. PHYS REV B, 69(15).
- lambda similar to 4-5.3 mu m intersubband emission from InGaAs-AlAsSb quantum cascade structures. APPL PHYS LETT, 84(9), 1447-1449.
- Anomalous dispersion with excitation wavelength of longitudinal optical phonon-plasmon coupled modes in n-InGaAs. J PHYS-CONDENS MAT, 16(6), 971-978.
- Direct observation of LO phonon-plasmon coupled modes in the infrared transmission spectra of n-GaAs and n-InxGa1-xAs epilayers. PHYS REV B, 69(7).
- Laser dynamics in self-pulsating quantum dot systems. J APPL PHYS, 95(3), 1036-1041.
- Temperature dependence of carrier dynamics in an inhomogeneous array of quantum dots. Proceedings of SPIE - The International Society for Optical Engineering, 5452, 33-40.
- Mode structure of quantum dot semiconductor lasers. Proceedings of SPIE - The International Society for Optical Engineering, 5452, 518-525.
- Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling. Physica E: Low-Dimensional Systems and Nanostructures, 21(2-4), 892-896.
- Improving optical properties of 1.55 mu m GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer. APPL PHYS LETT, 83(24), 4951-4953.
- 1.3 mu m lasers with AlInAs-capped self-assembled quantum dots. APPL PHYS LETT, 83(23), 4710-4712.
- Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots. PHYS REV B, 68(23).
- Engineering carrier confinement potentials in 1.3-mu m InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity. APPL PHYS LETT, 83(18), 3716-3718.
- Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared. APPL PHYS LETT, 83(15), 3111-3113.
- Metastable rocksalt phase in epitaxial GaN on sapphire. APPL PHYS LETT, 83(14), 2808-2810.
- Crack initiation and termination in III-V epitaxial layers. PHILOS MAG, 83(27), 3077-3092.
- Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells. PHYS REV LETT, 91(12).
- Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells. J APPL PHYS, 94(5), 3222-3228.
- Multiplication and excess noise in AlxGa1-xAs/GaAs multilayer avalanche photodiodes. J APPL PHYS, 94(4), 2631-2637.
- The onset of plasticity in nanoscale contact loading. P ROY SOC LOND A MAT, 459(2036), 2049-2068.
- Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots. APPL PHYS LETT, 83(4), 602-604.
- Defect states and commensurability in dual-period AlxGa1-xAs photonic crystal waveguides. PHYS REV B, 68(3).
- Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots. APPL PHYS LETT, 83(2), 290-292.
- Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy. APPL PHYS LETT, 82(21), 3758-3760.
- Tuning the structural and optical properties of 1.3-mu m InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer. APPL PHYS LETT, 82(21), 3644-3646.
- Room-temperature operation of an InAs-GaAs-AlAs quantum-cascade laser. APPL PHYS LETT, 82(20), 3409-3411.
- Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots. APPL PHYS LETT, 82(20), 3415-3417.
- On the diffusion of lattice matched InGaAs/InP microstructures. J APPL PHYS, 93(7), 3881-3885.
- Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers. J APPL PHYS, 93(6), 3524-3528.
- Optimizing the growth of 1.3 mu m InAs/InGaAs dots-in-a-well structure. J APPL PHYS, 93(5), 2931-2936.
- Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers. APPL PHYS LETT, 81(26), 4904-4906.
- Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes. J APPL PHYS, 92(12), 7684-7686.
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- Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments. APPL PHYS LETT, 81(22), 4118-4120.
- Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding. ELECTRON LETT, 38(24), 1539-1541.
- Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers. APPL PHYS LETT, 81(17), 3251-3253.
- Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots. PHYS REV B, 66(15).
- Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy. APPL PHYS LETT, 81(9), 1708-1710.
- Intervalley scattering in GaAs-AlAs quantum cascade lasers. APPL PHYS LETT, 81(8), 1378-1380.
- Stranski-Krastanow transition and epitaxial island growth. PHYS REV B, 66(8).
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- Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy. Applied Surface Science, 190(1-4), 258-263.
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- Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates. APPL PHYS LETT, 80(9), 1541-1543.
- GaAs-based quantum cascade lasers with native oxide-defined current confinement. ELECTRON LETT, 38(2), 75-77.
- Raman scattering by LO phonon-plasmon coupled modes in n-type In0.53Ga0.47As. PHYS REV B, 65(3).
- Performance of lasers containing three, five and seven layers of quantum dots. IEE P-OPTOELECTRON, 148(5-6), 238-242.
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under non-resonant ultra-low power optical excitation. Phys. Rev. B, 88, 045306. View this article in WRRO
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- High resolution nuclear magnetic resonance spectroscopy of
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Chapters
- Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy, Microscopy of Semiconducting Materials 2003 (pp. 143-146). CRC Press
- Quantum Dot Switches: Towards Nanoscale Power-Efficient All-Optical Signal Processing, Quantum Dot Devices (pp. 197-221). Springer New York
- Catastrophic Optical Damage in Quantum Dot Lasers, Quantum Dot Devices (pp. 93-108). Springer New York
- Phase-Matched Second-Harmonic and Cascade Laser Mid-IR Sources, Intersubband Transitions in Quantum Wells: Physics and Devices (pp. 22-29). Springer US
- Microscopy of Semiconducting Materials 2003 CRC Press
- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells, Dilute III-V Nitride Semiconductors and Material Systems (pp. 199-221). Springer Berlin Heidelberg
- Analysis of the mechanism of N incorporation in N-doped GaAs quantum wells, EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany (pp. 119-120). Springer Berlin Heidelberg
Conference proceedings papers
- Surface Nano-Structuring of Semiconductors by Nanosecond Pulsed Laser Interference. 2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 31 July 2023 - 4 August 2023.
- Directed self-assembly of InAs quantum dots using in situ interference lithography. Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 1 February 2020 - 6 February 2020.
- Generating optical frequency combs via nanoscale photonic structures. Physics and Simulation of Optoelectronic Devices XXVIII, 1 February 2020 - 6 February 2020.
- In-situ laser interference patterning of MBE growth surfaces. Laser-based Micro- and Nanoprocessing XIV, 1 February 2020 - 6 February 2020.
- Fabrication of sub-micrometer periodic nanostructures using pulsed laser interference for efficient light trapping in optoelectronic devices. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXV, 1 February 2020 - 6 February 2020.
- Quality Factor Control in Laterally-Coupled Vertical Cavities. 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 13 August 2018 - 17 August 2018.
- Modulating Photonic Crystal Structures to Generate Optical Frequency Combs. 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 13 August 2018 - 17 August 2018.
- Investigations on photocurrent bi-stability of a two-color mode-locked quantum dot laser. 2014 16th International Conference on Transparent Optical Networks (ICTON), 6 July 2014 - 10 July 2014.
- Recent progress in short wavelength quantum cascade lasers. 2011 IEEE Photonics Society Summer Topical Meeting Series (pp 57-58)
- InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 165(1-2) (pp 88-93)
- Limits of In(Ga)As/GaAs quantum dot growth. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 246(4) (pp 717-720)
- Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots. MICROELECTRONICS JOURNAL, Vol. 40(4-5) (pp 838-840)
- Two-colour photocurrent detection technique for coherent control of a single InGaAs/GaAs quantum dot. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 246(4) (pp 824-827)
- Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. MICROELECTRONICS JOURNAL, Vol. 40(3) (pp 533-536)
- Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering study. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 20 (pp 116-119)
- The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs. OPTICAL AND QUANTUM ELECTRONICS, Vol. 40(14-15) (pp 1143-1148)
- Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilising a Multi-Contact Device Incorporating Chirped Quantum Dots. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Novel, Simple Model for High Temperature Stability of InAs/GaAs Self-assembled Quantum Dot Lasers with Optimum p-type Modulation Doping. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Two Section Quantum Dot Lasers for Tuning and Modulation. Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Development of Self-assembled Quantum Dot Lasers for Telecommunications Applications (Invited). Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 23 September 2008 - 26 September 2008.
- Structure of InAs quantum dots-in-a-well nanostructures. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 40(6) (pp 1988-1990)
- multi-contact quantum dot superluminescent diodes for optical coherence tomography. 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
- High-performance 1300-nm InAs/GaAs quantum-dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6909
- GaInNAs(Sb) surface normal devices. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 205(1) (pp 85-92)
- Electric field effect in the spin dynamics of self-assembled InAs/GaAs quantum dots. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, Vol. 316(2) (pp E52-E55)
- Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots. JOURNAL OF APPLIED PHYSICS, Vol. 101(8)
- Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates. JOURNAL OF CRYSTAL GROWTH, Vol. 301 (pp 552-555)
- Spectroscopic evaluation of the structural and compositional properties of GaNxAs1-x superlattices grown by molecular beam epitaxy. THIN SOLID FILMS, Vol. 515(10) (pp 4430-4434)
- Photon coupling mechanism in 1.3-μm quantum-dot lasers. Conference on Lasers and Electro-Optics, 2007, CLEO 2007
- Intensity noise of ultrabroadband Quantum Dot Light Emitting Diodes and Lasers at 1.3 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6603
- Systematic study of the effects of δ-p-doping on 1.3μm Dot-in-well lasers. Conference on Lasers and Electro-Optics Europe - Technical Digest
- High performance 2.2 mu m optically-pumped vertical external-cavity surface-emitting laser. JOURNAL OF MODERN OPTICS, Vol. 54(12) (pp 1677-1683)
- Coherent control of single quantum dot exciton embedded in a photodiode. JOURNAL OF MODERN OPTICS, Vol. 54(12) (pp 1717-1722)
- Maximising the gain - Optimising the carrier distribution in InGaAs quantum dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6468
- High-performance 1.3 mu m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 280-283)
- Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 153(6) (pp 316-320)
- RF-plasma source qualification and compositional characterisation of GaNAs superlattices using SIMS. APPLIED SURFACE SCIENCE, Vol. 252(19) (pp 7218-7220)
- Polarisation control and emission enhancement of a quantum dot in ultra-high finesse microcavity pillars. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 32(1-2) (pp 500-503)
- Broadband quantum cascade lasers and superluminescent diodes. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
- High-power and broad-band quantum dot SLDs for optical coherence tomography. Conference Digest - IEEE International Semiconductor Laser Conference (pp 47-48)
- Design, fabrication, and operating characteristics of broadband quantum dot superluminescent diodes. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
- Dilute nitride-based 1.3-mu m high-performance lasers - art. no. 61840D. Semiconductor Lasers and Laser Dynamics II, Vol. 6184 (pp D1840-D1840)
- Characterisation of modulation doped quantum dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6133
- Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications. Electro-Optical and Infrared Systems: Technology and Applications III, Vol. 6395 (pp U102-U110)
- High-performance 1.3-mu m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature - art. no. 618417. Semiconductor Lasers and Laser Dynamics II, Vol. 6184 (pp 18417-18417)
- Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells - art. no. 612907. Quantum Dots, Particles, and Nanoclusters III, Vol. 6129 (pp 12907-12907)
- Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy - art. no. 61290G. Quantum Dots, Particles, and Nanoclusters III, Vol. 6129 (pp G1290-G1290)
- Characterization of structure and defects in dot-in-well laser structures. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 793-797)
- Optimizing the growth of 1.3-mu m InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
- Critical barrier thickness for the formation of InGaAs/GaAs quantum dots. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 798-803)
- Reflection and emission of Brillouin zone edge states for active photonic crystal waveguides. JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, Vol. 7(6) (pp S270-S275)
- Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition. APPLIED SURFACE SCIENCE, Vol. 244(1-4) (pp 65-70)
- Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GraAs DWELL quantum. JOURNAL OF CRYSTAL GROWTH, Vol. 278(1-4) (pp 151-155)
- Anisotropy of the electron energy levels in InxGa1-xAs/GaAs quantum dots with non uniform composition. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 436-440)
- Lasing and spontaneous emission characteristics of 1.3 mu m In(Ga)As quantum-dot lasers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 382-385)
- The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 408-412)
- Enhanced photoluminescence intensity of 1.3-mu m multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 129-132)
- Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 245-251)
- Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 302-307)
- Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 105-109)
- Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 124-128)
- Growth and characterisation of multiple layer quantum dot lasers. Novel In-Plane Semiconductor Lasers IV, Vol. 5738 (pp 332-346)
- High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 241(14) (pp 3257-3262)
- Composition fluctuations in GaInNAs multi-quantum wells. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 271-274)
- Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304)
- Structural defects characterisation of GaInNAs MQWs by TEM and PL. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 385-388)
- Investigations of 1.55-mu m GaInNAs/GaAs heterostructures by optical spectroscopy. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
- Polaron relaxation channel in InAs/GaAs self-assembled quantum dots. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 19(4) (pp S316-S318)
- Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 199-203)
- Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 405-408)
- Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, 2004.
- Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80)
- Polaron decay and inter-level transfer in InAs/GaAs self-assembled quantum dots. 11TH INTERNATIONAL CONFERENCE ON PHONON SCATTERING IN CONDENSED MATTER, PROCEEDINGS (pp 2613-2616)
- AlAs-like TO-phonon dephasing time in high al content AlGaAs. 11TH INTERNATIONAL CONFERENCE ON PHONON SCATTERING IN CONDENSED MATTER, PROCEEDINGS (pp 2686-2689)
- Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, Vol. 5352 (pp 348-354)
- Observation of in-plane polarized intersublevel absorption in strongly coupled InGaAs/GaAs self assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 238(2) (pp 341-344)
- Composition profiling at the atomic scale in III-V nanostructures by cross-sectional STM. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 17(1-4) (pp 526-532)
- Transverse mode structure of broad area quantum dot edge emitting lasers emitting at 1060 nm. Frontiers in Optics, 2003.
- Analysis of quantum dot dynamics via q-switching. Nonlinear Optics: Materials, Fundamentals and Applications, 2002.
- Filamentation and linewidth enhancement factor In InGaAs quantum dot lasers. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 11 May 2001 - 11 May 2001.
- Optical mode loss and gain of multiple layer quantum dot lasers. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 11 May 2001 - 11 May 2001.
- Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM (pp 359-360)
- View this article in WRRO
- Efficient intersubband-based SHG in semiconductor quantum wells. Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), 3 May 1998 - 8 May 1998.
- Advantages of quantum well solar cells for TPV. Third NREL Conference on thermophotovoltaic generation of electricity
- A new approach to p-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells. Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 13 May 1996 - 17 May 1996.
- Passive mode locking of Er3+-doped-fiber lasers using a semiconductor saturable absorber and an integrated Bragg stack. Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, 1993.
- Microwave-modulated photoluminescence: technique and application to III-Vs (Poster Paper). Spectroscopic Characterization Techniques for Semiconductor Technology IV
- Temperature dependence of the wavelength of quantum dot lasers. Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
- Intrinsic performance of InGaAs-GaAs quantum dot lasers. LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080)
- A 25 period InAs/sub 0.54/P/sub 0.46//In/sub 0.89/Ga/sub 0.11/P MQW for 1.55 μm modulation grown by solid source MBE. Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
- InAsP/In[Ga]P MQWs for 1.55 μm modulators grown by solid-source MBE. Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
- Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society
- A comparison of ∂-doped quantum well structures for power FET applications. Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
- Strain-balanced quantum wells for power FET applications. Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95
- Strain effects in InAsP/InP MQW modulators for 1.06 μm operation. Seventh International Conference on Indium Phosphide and Related Materials
- A comparison of material systems for quantum well 1.55 μm micro-resonator modulators. Conference on Lasers and Electro-Optics Europe
- Varying strains in InAs/sub 1-x/P/sub x//InP multiple quantum well device structures. 1993 (5th) International Conference on Indium Phosphide and Related Materials
- Photoconductivity of a strained InAs/InP superlattice in the 1.0-1.5 mu m region. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
- High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy. [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
Working papers
- Population inversion in a single InGaAs quantum dot using the method of adiabatic rapid passage. Physical Review Letters, 106.
Preprints
- Teaching activities
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- EEE6215 (Nanoscale Electronic Devices)
- EEE6216 (Energy efficient Semiconductor Devices)
- EEE260/262 Solar Cell Design Project
- Professional activities and memberships
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- Professor of Semiconductor Materials
- Chair of the Undergraduate Examination Board
- Departmental REF2021 champion
- Research students
Student Degree Status Primary/Secondary Greenwood P D L PhD Graduated Primary Jin C PhD Graduated Primary Navaretti P PhD Graduated Primary Soong W M
PhD Graduated Secondary Taghi Kahni A PhD Graduated Secondary