Professor Jo Shien Ng
PhD, BEng
School of Electrical and Electronic Engineering
Professor of Semiconductor Devices
![Jo Shien](http://cdn.sheffield.ac.uk/sites/default/files/styles/profile_square_lg_1x/public/2024-08/FoE_Headshots_160.jpg?h=e8203c5c&itok=H5Mk0D3R)
![Profile picture of Jo Shien](http://cdn.sheffield.ac.uk/sites/default/files/styles/profile_modal/public/2024-08/FoE_Headshots_160.jpg?h=e8203c5c&itok=1gg67RXh)
+44 114 222 5173
Full contact details
School of Electrical and Electronic Engineering
- Profile
-
I received my BEng degree and PhD degrees in electronic engineering from the University of Sheffield, in 1999 and 2003, respectively.
After a postdoctoral position within the EPSRC National Centre for III–V Technologies (now part of EPSRC National Epitaxy Facility) for material and device characterization, I became a Royal Society Research Fellow from 2006 to 2016.
I am currently Professor of Semiconductor Devices. My research is focused on developing a type of light sensors capable of measuring the weakest possible light signals.
There is a wide range of applications that rely on detection of the weakest possible light signal. An example is quantum cryptography (whose encryption key is made up of these very weak light), which currently offers the ultimate encryption safety.
Other key applications for highly sensitive light sensors are high-speed optical communication systems, laser-based ranging (autonomous vehicles and high-resolution geographical mapping), medical imaging (X-ray computed tomography), and non-contact temperature measurements.
These systems depend on detecting light so weak that each signal comprises only hundreds or photons (which make up the light) or even down to a single photon.
I am particularly interested in using avalanche photodiodes (APDs) to detect the very weak light. This semiconductor device senses light and gives electrical current that varies with the light intensity.
A process called avalanche gain (similar to how snow avalanche grows in size as it accelerates down a snow-covered mountain) in the APDs amplifies the electrical current, improving the system’s performance in terms of signal-to-noise ratios.
My current research themes include Si SPADs for detecting visible light from Raman spectroscopy; low-noise APDs for high-speed optical communication systems; measurements of avalanche gain and noise from novel materials; simulation models for APDs and single photon avalanche diodes (SPADs).
- Qualifications
-
- PhD (Electronic Engineering), University of Sheffield 2003
- BEng (Electronic Engineering), University of Sheffield 1999
- Research interests
-
- Avalanche photodiodes (APDs)
- Geiger mode avalanche photodiodes or Single Photon Avalanche Diodes (SPADs)
- High-performance photodetectors for mid-infrared light detection
- Publications
-
Journal articles
- Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection. IEEE Transactions on Electron Devices, 1-6.
- Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes. IEEE Transactions on Electron Devices, 1-0.
- GaAsSb/AlGaAsSb Avalanche Photodiode With High Gain-Linearity. IEEE Transactions on Electron Devices, 1-5.
- Single-photon detection for long-range imaging and sensing. Optica, 10(9), 1124-1124.
- Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44. AIP Advances, 13(4), 045010-045010.
- Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region. Applied Physics Letters, 122(5), 051103-051103.
- Fabrication of infrared linear arrays of InAs planar avalanche photodiodes. Optics Express, 30(12), 21758-21758.
- Simulation of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 30(11), 17946-17946. View this article in WRRO
- A GaAsSb/AlGaAsSb Avalanche Photodiode with a very small Temperature Coefficient of Breakdown Voltage. Journal of Lightwave Technology, 1-1.
- Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33(20), 1155-1158.
- Corrections to “Modeling Temperature Dependent Avalanche Characteristics of InP”. Journal of Lightwave Technology, 38(15), 4183-4183.
- Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology. View this article in WRRO
- Sensitivity calculations of high-speed optical receivers based on electron-APDs. Journal of Lightwave Technology, 38(4), 989-995. View this article in WRRO
- Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology. View this article in WRRO
- Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37(10). View this article in WRRO
- Few-photon detection using InAs avalanche photodiodes. Optics Express, 27(4), 5835-5842. View this article in WRRO
- Simple Monte Carlo Simulator for Modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++. Journal of Open Research Software, 6(1). View this article in WRRO
- Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes.. Optics Express, 26(3), 3568-3576. View this article in WRRO
- Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes. Optics Express, 25(26), 33610-33616. View this article in WRRO
- Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
- Thin Al1−x GaxAs 0.56Sb 0.44 Diodes With Low Excess Noise. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
- Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4, 170071-170071. View this article in WRRO
- Absorption coefficients in AlGaInP lattice-matched to GaAs. Solar Energy Materials and Solar Cells, 164, 28-31. View this article in WRRO
- Proton radiation effect on InAs avalanche photodiodes. Optics Express, 25(3), 2818-2825. View this article in WRRO
- InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product. Optics Express, 24(21), 24242-24242. View this article in WRRO
- Avalanche Breakdown Characteristics of Al₁–ₓ Gaₓ As₀.₅₆Sb₀.₄₄ Quaternary Alloys. IEEE Photonics Technology Letters, 28(22), 2495-2498. View this article in WRRO
- Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes. Journal of Applied Physics, 119(12), 124507-1-124507-9. View this article in WRRO
- Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11(3). View this article in WRRO
- InGaAs/InAlAs single photon avalanche diode for 1550 nm photons. Royal Society Open Science, 3(3), 150584-150584. View this article in WRRO
- Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 813, 1-9. View this article in WRRO
- Avalanche Noise in Al0.52In0.48P Diodes. IEEE Photonics Technology Letters, 28(4), 481-484. View this article in WRRO
- Determination of absorption coefficients in AlInP lattice matched to GaAs. Journal of Physics D: Applied Physics, 48(40), 405101-405101. View this article in WRRO
- InAs Photodiodes for 3.43 μm Radiation Thermometry. IEEE Sensors Journal, 15(10), 5555-5560. View this article in WRRO
- Characterization of room temperature AlGaAs soft X-ray mesa photodiodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 774, 29-33. View this article in WRRO
- 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22(19), 22608-22615. View this article in WRRO
- Localization effects and band gap of GaAsBi alloys. Physica Status Solidi (B) Basic Research, 251(6), 1276-1281.
- Al0.52In0.48P SAM-APD as a Blue-Green Detector. IEEE Journal of Selected Topics in Quantum Electronics, 20(6).
- GaAs/Al₀.₈Ga₀.₂As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9. View this article in WRRO
- Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P. JOURNAL OF APPLIED PHYSICS, 115(6). View this article in WRRO
- On the Use of Gaussian Approximation in Analyzing the Performance of Optical Receivers. IEEE PHOTONICS JOURNAL, 6(1). View this article in WRRO
- Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes. Applied Physics Letters, 103(10). View this article in WRRO
- Evaluation of InAs quantum dots on Si as optical modulator. Semiconductor Science and Technology, 28(9).
- Temperature dependence of impact ionization in InAs.. Opt Express, 21(7), 8630-8637. View this article in WRRO
- An InGaAs/AlAsSb avalanche photodiode with a small temperature coefficient of breakdown. IEEE Photonics Journal, 5(4). View this article in WRRO
- Determination of the electron-hole pair creation energy in Al0.8Ga0.2As. JOURNAL OF INSTRUMENTATION, 7.
- Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes. IEEE Transactions on Electron Devices, 59(4), 1063-1067. View this article in WRRO
- Absorption characteristics of GaAs
1?x Bix /GaAs diodes in the near-infrared. IEEE Photonics Technology Letters, 24(23), 2191-2194. - Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors. Journal of Electronic Materials, 1-9.
- 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics Express, 20(10), 10446-10452. View this article in WRRO
- Effects of rapid thermal annealing on GaAs
1-x Bix alloys. Applied Physics Letters, 101(1). - Room temperature photoluminescence intensity enhancement in GaAs
1-x Bix alloys. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 259-261. - A varied shaping time noise analysis of Al
0.8 Ga0.2 As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 673, 10-15. - The effect of Bi composition to the optical quality of GaAs1-xBix. APPL PHYS LETT, 99(4).
- GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications. IEEE ELECTR DEVICE L, 32(7), 919-921.
- Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors. IEEE T ELECTRON DEV, 58(6), 1696-1701.
- Photoluminescence investigation of high quality GaAs1-xBix on GaAs. APPL PHYS LETT, 98(12).
- InAs avalanche photodiodes for X-ray detection. Journal of Instrumentation, 6(12).
- Development of high temperature AlGaAs soft X-ray photon counting detectors. Journal of Instrumentation, 6(12).
- Impact ionization coefficients in Al
0.52 In0.48 P. IEEE Electron Device Letters, 32(11), 1528-1530. - InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm. IEEE Transactions on Electron Devices, 58(2), 486-489.
- Sensitivity of high-speed lightwave system receivers using InAlAs avalanche photodiodes. IEEE Photonics Technology Letters, 23(4), 233-235.
- Dark current mechanism in bulk GaInNAs lattice matched to GaAs. IEEE Transactions on Electron Devices, 58(1), 103-106.
- Temperature dependence of AlGaAs soft X-ray detectors. NUCL INSTRUM METH A, 621(1-3), 453-455.
- Temperature Dependence of Avalanche Breakdown in InP and InAlAs. IEEE J QUANTUM ELECT, 46(8), 1153-1157.
- Optimization of InP APDs for High-Speed Lightwave Systems. J LIGHTWAVE TECHNOL, 27(15), 3294-3302. View this article in WRRO
- A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes. IEEE J QUANTUM ELECT, 45(5-6), 566-571. View this article in WRRO
- Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE J QUANTUM ELECT, 45(1-2), 79-85. View this article in WRRO
- AlGaAs diodes for X-ray spectroscopy. NUCL INSTRUM METH A, 594(2), 202-205.
- Impact ionization coefficients in 4H-SiC. IEEE T ELECTRON DEV, 55(8), 1984-1990.
- Avalanche noise characteristics in submicron InP diodes. IEEE J QUANTUM ELECT, 44(3-4), 378-382.
- Single-photon avalanche diode detectors for quantum key distribution. IET OPTOELECTRONICS, 1(6), 249-254.
- Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
- Statistics of avalanche current buildup time in single-photon avalanche diodes. IEEE J SEL TOP QUANT, 13(4), 906-910.
- Capacitive quenching measurement circuit for Geiger-mode avalanche photodiodes. IEEE J SEL TOP QUANT, 13(4), 919-925.
- Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
- Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs. J APPL PHYS, 101(6).
- Effects of dead space on breakdown probability in Geiger mode avalanche photodiode. J MOD OPTIC, 54(2-3), 353-360.
- Avalanche multiplication in InAlAs. IEEE T ELECTRON DEV, 54(1), 11-16.
- Photoluminescence beyond 1.5 mu m from InAs quantum dots. MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
- Design and performance of an InGaAs-InP single-photon avalanche diode detector. IEEE J QUANTUM ELECT, 42(3-4), 397-403.
- Room-temperature 1.6 mu m light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. J APPL PHYS, 99(4).
- Excess noise measurement in In0.53Ga0.47As. IEEE PHOTONIC TECH L, 17(11), 2412-2414. View this article in WRRO
- Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE J QUANTUM ELECT, 41(8), 1092-1096.
- Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold 1.31μm Quantum Dot Lasers. Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
- Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
- Temperature dependence of electron impact ionization in In0.53Ga0.47As. APPL PHYS LETT, 84(13), 2322-2324.
- A comparison of avalanche breakdown probabilities in semiconductor materials. Journal of Modern Optics, 51(9-10), 1315-1321.
- Improving optical properties of 1.55 mu m GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer. APPL PHYS LETT, 83(24), 4951-4953.
- Temperature dependent low-field electron multiplication in In0.53Ga0.47As. APPL PHYS LETT, 83(14), 2820-2822.
- Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE T ELECTRON DEV, 50(4), 901-905. View this article in WRRO
- Avalanche breakdown voltage of In0.53Ga0.47As. J APPL PHYS, 91(8), 5200-5202.
- View this article in WRRO
- On-Chip Circularly Polarized Circular Loop Antennas Utilizing 4H-SiC and GaAs Substrates in the Q/V Band. Sensors, 24(2), 321-321.
- Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II Superlattice Photodiodes. Semiconductor Science and Technology.
- InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10(10), P10030-P10030. View this article in WRRO
- Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9(08), T08005-T08005. View this article in WRRO
- A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon. Journal of Instrumentation, 7(08), P08006-P08006.
Conference proceedings papers
- Extremely low noise InAs and AlGaAsSb avalanche photodiodes for low photon detection in infrared wavelengths. Optical Sensing and Detection VIII, 7 April 2024 - 12 April 2024.
- Low photon detection using low-noise InAs and AlGaAsSb avalanche photodiodes. Infrared Technology and Applications L, 21 April 2024 - 26 April 2024.
- Silicon Carbide Antenna for Polarization Agility in Constrained Environments. 2023 IEEE Conference on Antenna Measurements and Applications (CAMA), 15 November 2023 - 17 November 2023.
- Monolithic Frequency-Reconfigurable Antenna on Silicon Carbide for Constrained Environments. 2023 IEEE Conference on Antenna Measurements and Applications (CAMA), 15 November 2023 - 17 November 2023.
- Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection. Optical Components and Materials XX, Vol. 12417 (pp 124170k-124170k), 28 January 2023 - 28 January 2023.
- Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection. Optical Components and Materials XIX, 22 January 2022 - 28 March 2022.
- AlGaAsSb Avalanche Photodiodes. 2018 IEEE Photonics Conference (IPC), 30 September 2018 - 4 October 2018.
- Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- Progress in low light-level InAs detectors- towards Geiger-mode detection. Advanced Photon Counting Techniques XI View this article in WRRO
- High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016. View this article in WRRO
- InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
- Temperature dependence of avalanche gain in Al
0.85 Ga0.15 As0.56 Sb0.44 APD. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016. 0.52 In0.48 P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015
Al- Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference 2015, 2015.
- InAs photodiode for low temperature sensing. Sensors, Systems, and Next-Generation Satellites XIX View this article in WRRO
- A high sensitivity detector for underwater communication systems. Unmanned/Unattended Sensors and Sensor Networks XI; and Advanced Free-Space Optical Communication Techniques and Applications
- Narrow-band detector for underwater communication system. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- Photoluminescence from localized states in GaAsBi epilayers. 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 27 August 2014 - 29 August 2014.
- Design of High Sensitivity Detector for Underwater Communication System. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
- InAs quantum dot photodetector operating at 1.3 μm grown on Silicon. 2012 IEEE Photonics Conference, IPC 2012 (pp 167-168)
- Dilute nitride GaInNAs and GaInNAsSb for solar cell applications. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8256
- Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
- GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
- Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
- InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
- InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 276-277)
- InGaAsN absorber for telecommunication wavelength APDs. 2010 Photonics Global Conference, PGC 2010
- Sensitivity of high-speed receivers using InAlAs avalanche photodiodes. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 126-127)
- Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
- InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
- Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7726
- Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
- Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
- InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
- High performance 2.2 μm optically-pumped vertical external-cavity surface-emitting laser. Journal of Modern Optics, Vol. 54(12) (pp 1677-1683)
- Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
- Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 245-251)
- Investigations of 1.55-mu m GaInNAs/GaAs heterostructures by optical spectroscopy. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
- A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
- Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80)
- Impact ionisation coefficients of In0.53Ga0.47As. IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228)
- Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes (pp 339-342)
Software / Code
- Simple Monte Carlo Simulator v1.0.0.
- Software for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.
Datasets
- Data for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.
- Few-photon detection using InAs avalanche photodiodes.
- Data for RSOS paper: Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown.
- Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise.
Other
- Temperature dependence of impact ionization in InAs: erratum. Optics Express, 22(21), 25923-25923.
Preprints
- Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection. IEEE Transactions on Electron Devices, 1-6.
- Grants
-
Dates Sponsor Grant Title PI/co-I Jul 15 - Apr 16 Commercial AIInP detectors PI Jul 15 - Jun 16 Commercial Avalanche photodiodes Co-I Jul 15 - Jun 18 STFC Linear geiger mode detector technology for time resolved spectral measurements PI Mar 15 - Feb 17 Royal Society High-performance photodetectors for mid-infrared light detection PI Jan 15 - Jun 18 EU H2020 PROMIS (Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics) Co-I Jan 15 - Jun 15 European Space Agency InAs APD development for NIR & SWIR applications (Extension) PI Apr 13 - Oct 16 EPSRC Next generation avalanche photodiodes Co-I Apr 13 - Mar 16 Royal Society Royal Society University Research Fellowship PI Sept 12 - Aug 15 EPSRC InAsNSb dilute nitride materials for mid-infrared devices and applications. Co-I Jun 14 - Oct 14 Commercial InGaAs/InAIAs APDs PI
Jan 13 - Dec 14 European Space Agency InAs APD development for NIR & SWIR applications Co-I Dec 12 - Jun 13 Commercial InGaAs/InAIAs APDs PI Apr 12 - Sept 12 MoD CDE Narrow band APDs for underwater communications Co-I Mar 11 - Feb 13 EPSRC High performance X-ray detectors with sub-100eV energy resolution PI Oct 10 - Sept 13 EPSRC Novel InAS avalanche photodiodes for photon counting applications Co-I Dec 09 - Nov 12 STFC (PIPSS) Knowledge exchange in AIGaAs X-ray detectors PI Apr 09 - Apr 10 EMRS DTC Detector for infrared Algorithmic Spectrometer Co-I Oct 08 - Sept 11 TSB Extended Tempertaure OptoElectronics II (ETOE II) Co-I May 08 - Jul 11 EU FP7 Materials for avalanche receiver for ultimate sensitivity (MARISE) PI May 08 - Jul 10 EPSRC New high-performance avalanche photodiodes based on the unique properties of dilute nitrides. Co-I Nov 07 - Oct 08 MoD Col Detectors for UV non line-of-sight communication Co-I Nov 07 - Oct 08 MoD Col 2 Band Quantum Dot Infrared Photodiodes for Mid and Long Wave Infrared Scene Sensing Co-I Oct 07 - Sept 09 DSTL & STFC Avalanche photodiode array detector for eye-safe 3D imaging PI Apr 07 - Mar 10 EMRS DTC Infrared photodiodes based on Type-II Superlattices Co-I Oct 06 - Mar 13 Royal Society Royal Society University Research Fellowship PI May 06 - Sept 09 European Space Agency Near infrared detectors for LIDAR Co-I Apr 06 - Mar 09 EMRS DTC Co-I Oct 05 - Dec 05 EMRS DTC Novel low voltage InAs avalanche photodiodes for affordable 2D IR detectors. Co-I Apr 04 - Aprt 06 EU FP6 Secure Communications based on Quantum Cryptography Co-I Apr 03 - Mar 05 EMRS DTC High sensitivity avalanche photodiodes for imaging and rangefinding Co-I
- Teaching activities
-
- EEE123 (Introduction to Electric and Electronic Circuits)
- AER11003 (Aerospace Electrics and Drives)
- Professional activities and memberships
-
- Departmental Director of Research & Innovation
- EEE Women Adviser
- EEE Athena SWAN team member
- Research students
Student Degree Status Primary/Secondary Goldberg G R MPhil Graduated Primary Meng X PhD Graduated Primary Mohmad A R B PhD Graduated Primary Ong D S G PhD Graduated Primary Ong S-L PhD Graduated Primary Dimler S J PhD Graduated Secondary Guerrero Moreno M A MPhil Graduated Secondary