Professor Jo Shien Ng

PhD, BEng

School of Electrical and Electronic Engineering

Professor of Semiconductor Devices

School Director of Research & Innovation

j.s.ng@sheffield.ac.uk
+44 114 222 5173

Full contact details

Professor Jo Shien Ng
School of Electrical and Electronic Engineering

Profile

I received my BEng degree and PhD degrees in electronic engineering from the University of Sheffield, in 1999 and 2003, respectively.

I held a postdoctoral position responsible for III-V material and device characterisation (2003 - 2006) within the EPSRC National Centre for III–V Technologies (now part of EPSRC National Epitaxy Facility).

I became a Royal Society Research Fellow (2006 – 2016) at the same department, before joining the department as Reader in Semiconductor Devices (2016). I was promoted to Professor of Semiconductor Devices in 2017.

My research topics include infrared photodiodes, avalanche photodiodes (APDs), Single Photon Avalanche Diodes (SPADs) and material characterisation on novel avalanche materials. These have received funding from the UK (EPSRC, Innovate UK and STFC) and EU (Horizon 2020 and European Space Agency), with total research grant portfolio of over £4M.

I am co-authors of >100 peer-reviewed international journal articles.

Qualifications

PhD (Electronic Engineering), University of Sheffield 2003
BEng (Electronic Engineering), University of Sheffield 1999

Research interests

Avalanche photodiodes (APDs)
Geiger mode avalanche photodiodes or Single Photon Avalanche Diodes (SPADs)
High-performance photodetectors for mid-infrared light detection

Publications

Journal articles

Blain T, Veitch J, Shulyak V, Han IS, Hopkinson M, Ng JS & Tan CH (2025) InAs n-i-p diodes fabricated using S and Si Ion implantation. IEEE Transactions on Electron Devices. View this article in WRRO
Taylor-Mew J, Li L, Blain T, Tan CH & Ng JS (2025) Room temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode. IEEE Photonics Journal, 17(2). View this article in WRRO
Liu Y, Jin X, Jung H, Lee S, Harun F, Ng JS, Krishna S & David JPR (2024) Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes. Applied Physics Letters, 125(22). View this article in WRRO
Sheridan B, Collins X, Taylor-Mew J, White B, Ng JS & Tan CH (2024) An extremely low noise-equivalent power photoreceiver using high-gain InGaAs/AlGaAsSb APDs. Journal of Lightwave Technology. View this article in WRRO
Cao Y, Blain T, Li L, Veitch JD, Collins XD, Ng JS & Tan CH (2024) GaAsSb/AlGaAsSb avalanche photodiode with high gain-linearity. IEEE Transactions on Electron Devices, 71(10), 6161-6165. View this article in WRRO
Blain T, Shulyak V, Han IS, Hopkinson M, Ng JS & Tan CH (2024) Low noise equivalent power InAs avalanche photodiodes for infrared few-photon detection. IEEE Transactions on Electron Devices, 71(5), 3039-3044. View this article in WRRO
Taylor-Mew J, Collins X, White B, Tan CH & Ng JS (2024) Development of InGaAs/AlGaAsSb Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 71(3), 1994-1998. View this article in WRRO
Asfour R, Khamas SK, Ball EA, Ng JS, Huang G, Allanic R, Le Berre D, Quendo C, Leuliet A & Merlet T (2024) On-chip circularly polarized circular loop antennas utilizing 4H-SiC and GaAs substrates in the Q/V band. Sensors, 24(2). View this article in WRRO
Hadfield RH, Leach J, Fleming F, Paul DJ, Tan CH, Ng JS, Henderson RK & Buller GS (2023) Single-photon detection for long-range imaging and sensing. Optica, 10(9), 1124-1141. View this article in WRRO
Gandan S, Pinel LLG, Morales JSD, Ng JS, Tan CH & Ochalski T (2023) Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44. AIP Advances, 13(4). View this article in WRRO
Cao Y, Blain T, Taylor-Mew JD, Li L, Ng JS & Tan CH (2023) Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region. Applied Physics Letters, 122(5). View this article in WRRO
Petticrew J, Ji Y, Han IS, White B, Evirgen A, Reverchon J-L, Hopkinson M, Tan CH & Ng JS (2023) Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology, 38(2). View this article in WRRO
Osman T, Lim LW, Ng JS & Tan CH (2022) Fabrication of infrared linear arrays of InAs planar avalanche photodiodes. Optics Express, 30(12), 21758-21758. View this article in WRRO
Taylor-Mew JD, Petticrew JD, Tan CH & Ng JS (2022) Simulation of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 30(11), 17946-17952. View this article in WRRO
Cao Y, Osman T, Clarke E, Patil PK, Ng JS & Tan CH (2022) A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage. Journal of Lightwave Technology, 40(14), 4709-4713. View this article in WRRO
Taylor-Mew J, Shulyak V, White B, Tan CH & Ng JS (2021) Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33(20), 1155-1158.
Lim LW, Patil P, Marko I, Clarke EM, Sweeney S, Ng JS, David JPR & Tan CH (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology, 35(9). View this article in WRRO
Shulyak V, Hayat MM & Ng JS (2020) Sensitivity calculations of high-speed optical receivers based on electron-APDs. Journal of Lightwave Technology, 38(4), 989-995.
Petticrew J, Dimler S, Tan CH & Ng JS (2020) Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology, 38(4), 961-965. View this article in WRRO
Lim L, Tan CH, Ng J, Petticrew J & Krysa A (2019) Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37(10), 2375-2379. View this article in WRRO
Tan CH, Velichko A, Lim LW & Ng JS (2019) Few-photon detection using InAs avalanche photodiodes. Optics Express, 27(4), 5835-5842. View this article in WRRO
Petticrew JD, Dimler S & Ng JS (2018) Simple Monte Carlo Simulator for modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++. Journal of Open Research Software, 6(1). View this article in WRRO
Pinel LLG, Dimler SJ, Zhou X, Abdullah S, Zhang S, Tan CH & Ng JS (2018) Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 26(3), 3568-3576. View this article in WRRO
Petticrew JD, Dimler SJ, Zhou X, Morrison AP, Tan CH & Ng JS (2018) Avalanche breakdown timing statistics for silicon single photon avalanche diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
Abdullah S, Tan CH, Zhou X, Zhang S, Pinel L & Ng JS (2017) Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes. Optics Express, 25(26), 33610-33616. View this article in WRRO
Zhou X, Pinel L, Dimler S, Zhang S, Ng J & Tan C (2017) Thin GaAsSb diodes with low excess noise. IEEE Journal of Selected Topics in Quantum Electronics, 24(2), 1-5. View this article in WRRO
Zhou X, Tan CH, Zhang S, Moreno M, Xie S, Abdullah S & Ng JS (2017) Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4, 170071-170071. View this article in WRRO
Cheong JS, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2017) Absorption coefficients in AlGaInP lattice-matched to GaAs. Solar Energy Materials and Solar Cells, 164, 28-31. View this article in WRRO
Zhou X, White B, Meng X, Zhang S, Gutierrez M, Robbins M, Rojas LG, Nelms N, Tan CH & Ng JS (2017) Proton radiation effect on InAs avalanche photodiodes. Optics Express, 25(3), 2818-2825.
Xie S, Zhou X, Zhang S, Thomson DJ, Chen X, Reed GT, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product. Optics Express, 24(21), 24242-24242.
Zhou X, Zhang S, David J, Ng JS & Tan CH (2016) Avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 quaternary alloys. IEEE Photonics Technology Letters, 28(22), 2495-2498. View this article in WRRO
Lioliou G, Meng X, Ng JS & Barnett AM (2016) Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes. Journal of Applied Physics, 119(12), 124507-1-124507-9.
Auckloo A, Cheong JS, Meng X, Tan CH, Ng JS, Krysa AB, Tozer RC & David JPR (2016) Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11(3). View this article in WRRO
Meng X, Xie S, Zhou X, Calandri N, Sanzaro M, Tosi A, Tan CH & Ng JS (2016) InGaAs/InAlAs single photon avalanche diode for 1550 nm photons.. Royal Society Open Science, 3(3). View this article in WRRO
Lioliou G, Meng X, Ng JS & Barnett AM (2016) Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 813, 1-9.
Qiao L, Cheong JS, Ong JSL, Ng JS, Krysa AB, Green JE & David JPR (2015) Avalanche Noise in Al0.52In0.48P Diodes. IEEE Photonics Technology Letters, 28(4), 481-484. View this article in WRRO
Meng X, Zhou X, Zhang S, Lees J, Tan CH & Ng JS (2015) InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10(10). View this article in WRRO
Cheong JS, Ng JS, Krysa AB, Ong JSL & David JPR (2015) Determination of absorption coefficients in AlInP lattice matched to GaAs. Journal of Physics D: Applied Physics, 48(40). View this article in WRRO
Zhou X, Meng X, Krysa AB, Willmott JR, Ng JS & Tan CH (2015) InAs Photodiodes for 3.43 mu(text)m Radiation Thermometry. IEEE Sensors Journal, 15(10), 5555-5560. View this article in WRRO
Barnett AM, Lioliou G & Ng JS (2014) Characterization of room temperature AlGaAs soft X-ray mesa photodiodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 774, 29-33. View this article in WRRO
Meng X, Tan CH, Dimler S, David JPR & Ng JS (2014) 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22(19), 22608-22615. View this article in WRRO
Ng JS, Meng X, Lees JE, Barnett A & Tan CH (2014) Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9. View this article in WRRO
Mohmad AR, Bastiman F, Hunter CJ, Richards RD, Sweeney SJ, Ng JS, David JPR & Majlis BY (2014) Localization effects and band gap of GaAsBi alloys. Physica Status Solidi B Basic Research, 251(6), 1276-1281.
Cheong JS, Ong J, Ng JS, Krysa A & David JP (2014) Al0.52In0.48P SAM-APD as a Blue-Green Detector. IEEE Journal of Selected Topics in Quantum Electronics, 20(6), 142-146.
Gomes RB, Tan CH, Meng X, David JPR & Ng JS (2014) GaAs/Al₀.₈Ga₀.₂As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9.
Ong JSL, Ng JS, Krysa AB & David JPR (2014) Temperature dependence of avalanche multiplication and breakdown voltage in Al_0.52In_0.48P. JOURNAL OF APPLIED PHYSICS, 115(6).
El-Howayek G, Zhang C, Li Y, Ng JS, David JPR & Hayat MM (2014) On the Use of Gaussian Approximation in Analyzing the Performance of Optical Receivers. IEEE PHOTONICS JOURNAL, 6(1).
Tan SL, Soong WM, Green JE, Steer MJ, Zhang S, Tan LJJ, Ng JS, Marko IP, Sweeney SJ, Adams AR , Allam J et al (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes. Applied Physics Letters, 103(10).
Sandall IC, Ng JS, David JPR, Liu H & Tan CH (2013) Evaluation of InAs quantum dots on Si as optical modulator. Semiconductor Science and Technology, 28(9).
Xie J, Ng JS & Tan CH (2013) An InGaAs/AlAsSb avalanche photodiode with a small temperature coefficient of breakdown. IEEE Photonics Journal, 5(4).
Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2013) Temperature dependence of impact ionization in InAs.. Opt Express, 21(7), 8630-8637.
Hunter CJ, Bastiman F, Mohmad AR, Richards R, Ng JS, Sweeney SJ & David JPR (2012) Absorption characteristics of GaAs1?xBix/GaAs diodes in the near-infrared. IEEE Photonics Technology Letters, 24(23), 2191-2194.
Mohmad AR, Bastiman F, Hunter CJ, Richards R, Sweeney SJ, Ng JS & David JPR (2012) Effects of rapid thermal annealing on GaAs 1-xBi x alloys. Applied Physics Letters, 101(1).
Barnett AM, Lees JE, Bassford DJ & Ng JS (2012) Determination of the electron-hole pair creation energy in Al_0.8Ga_0.2As. JOURNAL OF INSTRUMENTATION, 7.
Barnett AM, Lees JE, Bassford DJ & Ng JS (2012) A varied shaping time noise analysis of Al 0.8Ga 0.2As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, 673, 10-15.
Sandall I, Ng JS, David JPR, Tan CH, Wang T & Liu H (2012) 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics Express, 20(10), 10446-10452.
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes. IEEE Transactions on Electron Devices, 59(4), 1063-1067.
Tan SL, Hunter CJ, Zhang S, Tan LJJ, Goh YL, Ng JS, David JPR, Marko IP, Sweeney SJ, Adams AR & Allam J (2012) Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors. Journal of Electronic Materials, 1-9.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2012) Room temperature photoluminescence intensity enhancement in GaAs 1-xBi x alloys. Physica Status Solidi C Current Topics in Solid State Physics, 9(2), 259-261.
Bastiman F, Mohmad ARB, Ng JS, David JPR & Sweeney SJ (2011) Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. Journal of Crystal Growth.
Gomes RB, Tan CH, Ker PJ, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. Journal of Instrumentation, 6(12).
Ong JSL, Ng JS, Krysa AB & David JPR (2011) Impact ionization coefficients in Al0.52In0.48P. IEEE Electron Device Letters, 32(11), 1528-1530.
Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH, Babazadeh N & Gomes RB (2011) The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
Ong JSL, Ng JS, Krysa AB & David JPR (2011) Impact Ionization Coefficients in Al0.52In0.48P. IEEE Electron Device Letters.
Mohmad AR, Bastiman F, Hunter CJ, Ng JS, Sweeney SJ & David JPR (2011) The effect of Bi composition to the optical quality of GaAs1-xBix. APPL PHYS LETT, 99(4).
Tan SL, Zhang SY, Soong WM, Goh YL, Tan LJJ, Ng JS, David JPR, Marko IP, Adams AR, Sweeney SJ & Allam J (2011) GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications. IEEE ELECTR DEVICE L, 32(7), 919-921.
Tan CH, Gomes RB, David JPR, Barnett AM, Bassford DJ, Lees JE & Ng JS (2011) Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors. IEEE T ELECTRON DEV, 58(6), 1696-1701.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2011) Photoluminescence investigation of high quality GaAs1-xBix on GaAs. APPL PHYS LETT, 98(12).
Ong DSG, Hayat MM, David JPR & Ng JS (2011) Sensitivity of high-speed lightwave system receivers using InAlAs avalanche photodiodes. IEEE Photonics Technology Letters, 23(4), 233-235.
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, Babazadeh N, Gomes RB, Vines P, David JPR, McKeag RD & Boe D (2011) Development of high temperature AlGaAs soft X-ray photon counting detectors. Journal of Instrumentation, 6(12).
Ong DSG, Ng JS, Goh YL, Tan CH, Zhang S & David JPR (2011) InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm. IEEE Transactions on Electron Devices, 58(2), 486-489.
Tan LJJ, Soong WM, David JPR & Ng JS (2011) Dark current mechanism in bulk GaInNAs lattice matched to GaAs. IEEE Transactions on Electron Devices, 58(1), 103-106.
Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH & Gomes RB (2010) Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH & Gomez RB (2010) Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
Barnett AM, Bassford DJ, Lees JE, Ng JS, Tan CH & David JPR (2010) Temperature dependence of AlGaAs soft X-ray detectors. NUCL INSTRUM METH A, 621(1-3), 453-455.
Tan LJJ, Ong DSG, Ng JS, Tan CH, Jones SK, Qian YH & David JPR (2010) Temperature Dependence of Avalanche Breakdown in InP and InAlAs. IEEE J QUANTUM ELECT, 46(8), 1153-1157.
Mun SCLT, Tan CH, Dimler SJ, Tan LJJ, Ng JS, Goh YL & David JPR (2009) A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes. IEEE J QUANTUM ELECT, 45(5-6), 566-571.
Ong DSG, Ng JS, Hayat MM, Sun P & David JPR (2009) Optimization of InP APDs for High-Speed Lightwave Systems. J LIGHTWAVE TECHNOL, 27(15), 3294-3302.
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ & Mowbray DJ (2009) Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE J QUANTUM ELECT, 45(1-2), 79-85.
Tan LJJ, Ng JS, Tan CH & David JPR (2008) Avalanche noise characteristics in submicron InP diodes. IEEE J QUANTUM ELECT, 44(3-4), 378-382.
Lees JE, Bassford DJ, Ng JS, Tan CH & David JPR (2008) AlGaAs diodes for X-ray spectroscopy. NUCL INSTRUM METH A, 594(2), 202-205.
Loh WS, Ng BK, Ng JS, Soloviev SI, Cha HY, Sandvik PM, Johnson CM & David JPR (2008) Impact ionization coefficients in 4H-SiC. IEEE T ELECTRON DEV, 55(8), 1984-1990.
Buller GS, Warburton RE, Pellegrini S, Ng JS, David JPR, Tan LJJ, Krysa AB & Cova S (2007) Single-photon avalanche diode detectors for quantum key distribution. IET OPTOELECTRONICS, 1(6), 249-254.
Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
Tan CH, Ng JS, Rees GJ & David JPR (2007) Statistics of avalanche current buildup time in single-photon avalanche diodes. IEEE J SEL TOP QUANT, 13(4), 906-910.
Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ & Adams AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs. J APPL PHYS, 101(6).
Ng JS, Tan CH, Rees GJ & David JPR (2007) Effects of dead space on breakdown probability in Geiger mode avalanche photodiode. J MOD OPTIC, 54(2-3), 353-360.
Dimler SJ, Ng JS, Tozer RC, Rees GJ & David JPR (2007) Capacitive quenching measurement circuit for Geiger-mode avalanche photodiodes. IEEE J SEL TOP QUANT, 13(4), 919-925.
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK, Rees GJ, Hopkinson A, David JPR & Jones SK (2007) Avalanche multiplication in InAlAs. IEEE T ELECTRON DEV, 54(1), 11-16.
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors.
Ng JS, Liu HY, Steer MJ, Hopkinson M & David JPR (2006) Photoluminescence beyond 1.5 mu m from InAs quantum dots. MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) Design and performance of an InGaAs-InP single-photon avalanche diode detector. IEEE J QUANTUM ELECT, 42(3-4), 397-403.
Liu HY, Steer MJ, Badcock TJ, Mowbray DJ, Skolnick MS, Suarez F, Ng JS, Hopkinson M & David JPR (2006) Room-temperature 1.6 mu m light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. J APPL PHYS, 99(4).
Goh YL, Ng JS, Tan CH, Ng WK & David JPR (2005) Excess noise measurement in In0.53Ga0.47As. IEEE PHOTONIC TECH L, 17(11), 2412-2414.
Ng JS, Tan CH, David JPR & Rees GJ (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE J QUANTUM ELECT, 41(8), 1092-1096.
Liu HY, Sellers IR, Badcock TJ, Mowbray DJ, Skolnick MS, Groom KM, Gutierrez M, Hopkinson M, Ng JS, David JPR & Beanland R (2004) Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
Tan CH, Rees GJ, Houston PA, Ng JS, Ng WK & David JPR (2004) Temperature dependence of electron impact ionization in In0.53Ga0.47As. APPL PHYS LETT, 84(13), 2322-2324.
Hogg R, Groom KM, Liu HY, Sellers IR, Ray SK, Badcock T, Gutierrez M, Hopkinson M, Ng JS, R. David JP , Mowbray DJ et al (2004) Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold 1.31μm Quantum Dot Lasers. Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. Journal of Modern Optics, 51(9-10), 1315-1321.
Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS & David JPR (2003) Improving optical properties of 1.55 mu m GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer. APPL PHYS LETT, 83(24), 4951-4953.
Ng WK, Tan CH, David JPR, Houston PA, Yee M & Ng JS (2003) Temperature dependent low-field electron multiplication in In0.53Ga0.47As. APPL PHYS LETT, 83(14), 2820-2822.
Ng JS, Tan CH, David JPR, Hill G & Rees GJ (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE T ELECTRON DEV, 50(4), 901-905.
Ng JS, Tan CH, David JPR & Rees GJ (2002) A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
Ng JS, David JPR, Rees GJ & Allam J (2002) Avalanche breakdown voltage of In0.53Ga0.47As. J APPL PHYS, 91(8), 5200-5202.
Ng JS, Tan CH, Ng BK, Hambleton PJ, David JPR, Rees GJ, You AH & Ong DS (2002) Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
Zhou X, Ng JS & Tan CH () A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon. Journal of Instrumentation, 7(08), P08006-P08006.

Conference proceedings

Tan CH, Blain T, Cao Y, Taylor-Mew J, White B, Collins X, Ng JS & David J (2024) Extremely low noise InAs and AlGaAsSb avalanche photodiodes for low photon detection in infrared wavelengths. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
Blain T, Basta G, Tan CH & Ng JS (2024) Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection. Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024. View this article in WRRO
Tan CH, Blain T, Taylor-Mew J, Cao Y, White B, Collins X, Ng JS & David J (2024) Low photon detection using low-noise InAs and AlGaAsSb avalanche photodiodes. Infrared Technology and Applications L (pp 19-19), 21 April 2024 - 26 April 2024.
Allanic R, Le Berre D, Quendo C, Ball EA, Shien Ng J, Huang G, Leuliet A & Merlet T (2023) Silicon carbide antenna for polarization agility in constrained environments. 2023 IEEE Conference on Antenna Measurements and Applications (CAMA) (pp 653-656). Genoa, Italy, 15 November 2023 - 15 November 2023. View this article in WRRO
Allanic R, Le Berre D, Quendo C, Ball EA, Shien Ng J, Huang G, Leuliet A & Merlet T (2023) Monolithic frequency-reconfigurable antenna on silicon carbide for constrained environments. 2023 IEEE Conference on Antenna Measurements and Applications (CAMA) (pp 649-652). Genoa, Italy, 15 November 2023 - 15 November 2023. View this article in WRRO
Collins X, Sheridan BS, Price DM, Cao Y, Blain T, Ng JS, Tan CH & White BS (2023) Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection. Optical Components and Materials XX, Vol. 12417 (pp 124170k-124170k). San Francisco, California, United States, 28 January 2023 - 28 January 2023. View this article in WRRO
Collins X, White B, Cao Y, Osman T, Taylor-Mew J, Ng JS & Tan CH (2022) Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection. Optical Components and Materials XIX, Vol. 11997 (pp 1199709). San Francisco, California, United States, 22 January 2022 - 22 January 2022. View this article in WRRO
Ng JS & Tan CH (2018) AlGaAsSb avalanche photodiodes. 2018 IEEE Photonics Conference (IPC). Reston, VA, USA, 30 September 2018 - 30 September 2018. View this article in WRRO
Pinel LLG, Tan CH & Ng JS (2018) Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, Vol. 10729 (pp 107290O). San Diego, California, United States, 19 August 2018 - 19 August 2018. View this article in WRRO
Zhang S, Abdullah S, Tan CH & Ng JS (2018) Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, Vol. 10729 (pp 107290f). San Diego, California, United State, 19 August 2018 - 19 August 2018. View this article in WRRO
Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. Proceedings, Advanced Photon Counting Techniques XI, Vol. 10212. California, United States, 9 April 2017 - 9 April 2017. View this article in WRRO
Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016.
Zhou X, Xie S, Zhang S, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (pp 1-2), 26 June 2016 - 30 June 2016.
Xie S, Zhou X, Zhang S, Ng JS & Tan CH (2016) Temperature dependence of avalanche gain in Al<inf>0.85</inf>Ga<inf>0.15</inf>As<inf>0.56</inf>Sb<inf>0.44</inf> APD. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (pp 1-2), 26 June 2016 - 30 June 2016.
Xie S, Zhou X, Zhang S, Ng JS & Tan CH (2016) Temperature dependence of avalanche gain in Al_0.85Ga_0.15As_0.56Sb_0.44 APD. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015
Cheong JS, Auckloo A, Ng JS, Krysa AB & David JPR (2015) A high sensitivity detector for underwater communication systems. SPIE Proceedings, Vol. 9647 (pp 96470O-96470O)
Zhou X, Ng JS & Tan CH (2015) In As photodiode for low temperature sensing. SPIE Proceedings, Vol. 9639. Bellingham View this article in WRRO
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference 2015 (pp ASu5A.3-ASu5A.3), 2015.
Cheong JS, Ong JSL, Ng JS, Krysa AB & David JPR (2014) Narrow-band detector for underwater communication system. 2014 IEEE Photonics Conference (pp 346-347), 12 October 2014 - 16 October 2014.
Mohmad AR, Majlis BY, Bastiman F, Hunter CJ, Richards RD, Ng JS & David JPR (2014) Photoluminescence from localized states in GaAsBi epilayers. 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) (pp 354-357), 27 August 2014 - 29 August 2014.
Cheong JS, Ong JSL, Ng JS, Krysa AB, Bastiman F & David JPR (2013) Design of High Sensitivity Detector for Underwater Communication System. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) InAs quantum dot photodetector operating at 1.3 μm grown on Silicon. 2012 IEEE Photonics Conference IPC 2012 (pp 167-168)
Tan SL, Soong WM, Steer MJ, Zhang S, Ng JS & David JPR (2012) Dilute nitride GaInNAs and GaInNAsSb for solar cell applications. Proceedings of SPIE the International Society for Optical Engineering, Vol. 8256
Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting Pho 2011 (pp 276-277)
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
Goh YL, Tan SL, Zhang S, Ng JS & David JPR (2010) InGaAsN absorber for telecommunication wavelength APDs. 2010 Photonics Global Conference Pgc 2010
Hayat MM, Ong DSG, David JPR & Ng JS (2010) Sensitivity of high-speed receivers using InAlAs avalanche photodiodes. 2010 23rd Annual Meeting of the IEEE Photonics Society Photinics 2010 (pp 126-127)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 421-424)
Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 187-190)
Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ & Adams AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7726
Ng JS, Tan CH & David JPR (2010) Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7681
Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J , Sweeney SJ et al (2009) Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7298
Ng JS, Tan CH & David JPR (2009) Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE the International Society for Optical Engineering, Vol. 7320
Loh WS, David JPR, Ng BK, Soloviev SI, Sandvik PM, Ng JS & Johnson CM (2009) Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314)
David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
Loh WS, David JPR, Soloviev SI, Cha HY, Sandvik PM, Ng JS & Johnson CM (2009) Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210)
Ong DSG, Ng JS, David JPR, Hayat MM & Sun P (2008) OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322)
Soong WM, Ng JS, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ, Adams AR & Allam J (2008) DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348)
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ, Sanchez AM & Beanland R (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, ChamingS J, Adams AR, Sweeney SJ & Aiiam J (2007) Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349)
Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
Loh WS, Johnson CM, Ng JS, Sandvik PM, Arthur SD, Soloviev SI & David JPR (2007) Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342)
Hopkins J-M, Preston RD, Maclean AJ, Calvez S, Sun H, NG J, Steer M, Hopkinson M & Burns D (2007) High performance 2.2 μm optically-pumped vertical external-cavity surface-emitting laser. Journal of Modern Optics, Vol. 54(12) (pp 1677-1683)
Ng JS, Tan CH & David JPR (2006) Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics Infobase Conference Papers
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
Gutierrez M, Hopkinson M, Liu HY, Ng JS, Herrera M, Gonzalez D, Garcia R & Beanland R (2005) Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 245-251)
Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
Liu HY, Sun HD, Navaretti P, Ng JS, Hopkinson M, Clark AH & Dawson MD (2004) 1.55-mu m GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials (pp 189-193)
Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference Conference Digest Drc (pp 79-80)
Sun HD, Clark AH, Calvez S, Dawson MD, Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS, David JPR , Gilet P et al (2004) Investigations of 1.55-mu m GaInNAs/GaAs heterostructures by optical spectroscopy. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
Ng JS, Yee MC, David JPR, Houston PA, Rees GJ & Hill G (2003) In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270)
Ng JS, David JPR, Rees GJ, Pinches SM & Hill G (2001) Impact ionisation coefficients of In0.53Ga0.47As. IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228)
Ng BK, Ng JS, Hambleton PJ, David JPR, Ong DS, Rees GJ & Tozer RC (2001) Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9)
Plimmer SA, Hambleton PJ, Ng BK, Dunn GM, Ng JS, David JPR & Rees GJ (2001) How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518)
Loh WS, Johnson CM, Ng JS, Sandvik P, Arthur S, Soloviev S & David JPR () Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes (pp 339-342)

Software, code or databases

Petticrew J, Dimler S & Ng J Simple Monte Carlo Simulator v1.0.0.
Petticrew J, Dimler S, Tan C & Ng J Software for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.

Datasets

Petticrew J, Dimler S, Tan C & Ng J Data for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.
Tan C, Velychko A, Lim L & Ng J Few-photon detection using InAs avalanche photodiodes.
Abdullah S, Tan C, Ng J, Zhou X, Zhang S & Guerrero MM Data for RSOS paper: Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown.
Tan C, Ng J, Zhang S, Zhou X, Pinel L & Dimler S Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise.

Other

Petticrew JD, Dimler SJ, Tan CH & Ng JS (2020) Modeling Temperature Dependent Avalanche Characteristics of InP (vol 38, pg 961, 2020). JOURNAL OF LIGHTWAVE TECHNOLOGY, 38(15), 4183-4183.
Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2014) Temperature dependence of impact ionization in InAs: erratum.. Opt Express, 22(21), 25923.
Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2014) Temperature dependence of impact ionization in InAs: erratum. Optics Express, 22(21), 25923-25923.

Preprints

Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors, arXiv.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector, arXiv.

Research group: Materials and Devices

Grants

Dates	Sponsor	Grant Title	PI/co-I
Jul 15 - Apr 16	Commercial	AIInP detectors	PI
Jul 15 - Jun 16	Commercial	Avalanche photodiodes	Co-I
Jul 15 - Jun 18	STFC	Linear geiger mode detector technology for time resolved spectral measurements	PI
Mar 15 - Feb 17	Royal Society	High-performance photodetectors for mid-infrared light detection	PI
Jan 15 - Jun 18	EU H2020	PROMIS (Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics)	Co-I
Jan 15 - Jun 15	European Space Agency	InAs APD development for NIR & SWIR applications (Extension)	PI
Apr 13 - Oct 16	EPSRC	Next generation avalanche photodiodes	Co-I
Apr 13 - Mar 16	Royal Society	Royal Society University Research Fellowship	PI
Sept 12 - Aug 15	EPSRC	InAsNSb dilute nitride materials for mid-infrared devices and applications.	Co-I
Jun 14 - Oct 14	Commercial	InGaAs/InAIAs APDs	PI
Jan 13 - Dec 14	European Space Agency	InAs APD development for NIR & SWIR applications	Co-I
Dec 12 - Jun 13	Commercial	InGaAs/InAIAs APDs	PI
Apr 12 - Sept 12	MoD CDE	Narrow band APDs for underwater communications	Co-I
Mar 11 - Feb 13	EPSRC	High performance X-ray detectors with sub-100eV energy resolution	PI
Oct 10 - Sept 13	EPSRC	Novel InAS avalanche photodiodes for photon counting applications	Co-I
Dec 09 - Nov 12	STFC (PIPSS)	Knowledge exchange in AIGaAs X-ray detectors	PI
Apr 09 - Apr 10	EMRS DTC	Detector for infrared Algorithmic Spectrometer	Co-I
Oct 08 - Sept 11	TSB	Extended Tempertaure OptoElectronics II (ETOE II)	Co-I
May 08 - Jul 11	EU FP7	Materials for avalanche receiver for ultimate sensitivity (MARISE)	PI
May 08 - Jul 10	EPSRC	New high-performance avalanche photodiodes based on the unique properties of dilute nitrides.	Co-I
Nov 07 - Oct 08	MoD Col	Detectors for UV non line-of-sight communication	Co-I
Nov 07 - Oct 08	MoD Col	2 Band Quantum Dot Infrared Photodiodes for Mid and Long Wave Infrared Scene Sensing	Co-I
Oct 07 - Sept 09	DSTL & STFC	Avalanche photodiode array detector for eye-safe 3D imaging	PI
Apr 07 - Mar 10	EMRS DTC	Infrared photodiodes based on Type-II Superlattices	Co-I
Oct 06 - Mar 13	Royal Society	Royal Society University Research Fellowship	PI
May 06 - Sept 09	European Space Agency	Near infrared detectors for LIDAR	Co-I
Apr 06 - Mar 09	EMRS DTC		Co-I
Oct 05 - Dec 05	EMRS DTC	Novel low voltage InAs avalanche photodiodes for affordable 2D IR detectors.	Co-I
Apr 04 - Aprt 06	EU FP6	Secure Communications based on Quantum Cryptography	Co-I
Apr 03 - Mar 05	EMRS DTC	High sensitivity avalanche photodiodes for imaging and rangefinding	Co-I

Teaching activities

EEE6217 - Optical Communication Devices and Systems

Professional activities and memberships

Member of IEEE
Co-founder of Phlux Technology Ltd, UK

Research students

Student	Degree	Status	Primary/Secondary
Goldberg G R	MPhil	Graduated	Primary
Meng X	PhD	Graduated	Primary
Mohmad A R B	PhD	Graduated	Primary
Ong D S G	PhD	Graduated	Primary
Ong S-L	PhD	Graduated	Primary
Dimler S J	PhD	Graduated	Secondary
Guerrero Moreno M A	MPhil	Graduated	Secondary

School of Electrical and Electronic Engineering

School of Electrical and Electronic Engineering

Professor Jo Shien Ng

Journal articles

Conference proceedings

Software, code or databases

Datasets

Other

Preprints

Links