Professor Chee Hing Tan
PhD, BEng
School of Electrical and Electronic Engineering
Head of Department
Professor of Opto-Electronic Sensors
Semiconductor Materials and Devices Research Group
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+44 114 222 5144
Full contact details
School of Electrical and Electronic Engineering
- Profile
-
I started as an undergraduate at the Department of Electronic and Electrical Engineering (EEE) at The University of Sheffield in September 1996.
I was awarded a 1st class BEng in Electronic Engineering - Communications, and was fortunate to be given a full scholarship to pursue a PhD degree at EEE.
The PhD in Electronic Engineering significantly broadened my knowledge in Engineering and stimulated my desire to learn and research. In particular, I gained deep understanding of how optical and electronic device properties can be modified by carefully optimised semiconductor crystals.
The ability to select different atoms to be combined in new semiconductor materials has led to many breakthroughs in transistors, lasers, solar cell and detectors.
EEE has provided a wonderful environment for me to explore fundamental engineering questions, advance research to generate lasting impacts and to share my experience with students and researchers.
I have always felt at home because of the strong support from academics, when I was a student, and from colleagues across the department since I became an academic in 2003.
My career has progressed with great support from many great colleagues and students, whom I considered my “extended family”. The welcoming environment and strong research and teaching culture in EEE have helped to enrich my experience in work and in life.
In February 2019 I was appointed Head of Department for EEE, a position of responsibility which I am very proud to take up.
- Qualifications
-
- PhD (Electronic Engineering), University of Sheffield 2002
- BEng (Electronic Engineering - Communications), University of Sheffield 1998
- Research interests
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- Avalanche photodiodes with electron-only ionisation for “noiseless” avalanche process (F<2) and extremely high gain-bandwidth product (>500 GHz).
- Design, modelling and characterisation of single photon avalanche diode (Si, GaAs, InAlAs, AlGaAsSb)
- High speed avalanche photodiodes for optical fiber communication, utilizing very thin avalanche region for improved excess noise and bandwidth (InP, InAlAs, AlGaAsSb lattice matched to InP)
- Novel multi-colour detectors for radiation thermometry
- High sensitivity detectors for infrared wavelengths bands NIR, SWIR, MWIR, LWIR and VLWIR
- Improving energy resolution of soft X-ray detection using avalanche photodiodes
- Publications
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Journal articles
- Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters, 124(25).
- Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection. IEEE Transactions on Electron Devices, 1-6.
- Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes. IEEE Transactions on Electron Devices, 1-0.
- GaAsSb/AlGaAsSb Avalanche Photodiode With High Gain-Linearity. IEEE Transactions on Electron Devices, 1-5.
- Single-photon detection for long-range imaging and sensing. Optica, 10(9), 1124-1124.
- Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44. AIP Advances, 13(4), 045010-045010.
- Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region. Applied Physics Letters, 122(5), 051103-051103.
- Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm. Materials Science in Semiconductor Processing, 153, 107135-107135.
- Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology. View this article in WRRO
- Fabrication of infrared linear arrays of InAs planar avalanche photodiodes. Optics Express, 30(12), 21758-21758.
- Simulation of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Optics Express, 30(11), 17946-17946. View this article in WRRO
- A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage. Journal of Lightwave Technology. View this article in WRRO
- Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33(20), 1155-1158. View this article in WRRO
- Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12(1).
- Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP. IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
- Corrections to “Modeling Temperature Dependent Avalanche Characteristics of InP”. Journal of Lightwave Technology, 38(15), 4183-4183.
- Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology. View this article in WRRO
- Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology. View this article in WRRO
- A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 126(12). View this article in WRRO
- Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics. View this article in WRRO
- Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37(10). View this article in WRRO
- Few-photon detection using InAs avalanche photodiodes. Optics Express, 27(4), 5835-5842. View this article in WRRO
- Quantitative traceable temperature measurement using novel thermal imaging camera. Optics Express, 26(19), 24904-24916. View this article in WRRO
- Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports, 8(1). View this article in WRRO
- InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C. Solar Energy Materials and Solar Cells, 179, 334-338. View this article in WRRO
- Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM.. Nanoscale Research Letters, 13(1). View this article in WRRO
- Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes.. Optics Express, 26(3), 3568-3576. View this article in WRRO
- Quantitative thermal imaging using single-pixel Si APD and MEMS mirror. Optics Express, 26(3), 3188-3198. View this article in WRRO
- Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes. Optics Express, 25(26), 33610-33616. View this article in WRRO
- Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
- Thin Al1−x GaxAs 0.56Sb 0.44 Diodes With Low Excess Noise. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
- Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4, 170071-170071. View this article in WRRO
- Proton radiation effect on InAs avalanche photodiodes. Optics Express, 25(3), 2818-2825. View this article in WRRO
- Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18). View this article in WRRO
- InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product. Optics Express, 24(21), 24242-24247. View this article in WRRO
- Avalanche Breakdown Characteristics of Al₁–ₓ Gaₓ As₀.₅₆Sb₀.₄₄ Quaternary Alloys. IEEE Photonics Technology Letters, 28(22), 2495-2498. View this article in WRRO
- Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11(3). View this article in WRRO
- Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. Electronics Letters, 52(5), 385-386.
- InGaAs/InAlAs single photon avalanche diode for 1550 nm photons. Royal Society Open Science, 3(3), 150584-150584. View this article in WRRO
- High-Gain InAs Planar Avalanche Photodiodes. Journal of Lightwave Technology, 34(11), 2639-2644. View this article in WRRO
- InAs Diodes Fabricated Using Be Ion Implantation. IEEE Transactions on Electron Devices, 62(9), 2928-2932. View this article in WRRO
- InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation. IEEE Photonics Technology Letters, 27(16), 1745-1748. View this article in WRRO
- InAs Photodiodes for 3.43 μm Radiation Thermometry. IEEE Sensors Journal, 15(10), 5555-5560. View this article in WRRO
- InAs/GaSb Type-II Superlattice for Radiation Thermometry. IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
- H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106(2), 022111-022111.
- 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22(19), 22608-22615. View this article in WRRO
- Demonstration of InAsBi photoresponse beyond 3.5 μ m. Applied Physics Letters, 104(17).
- GaAs/Al₀.₈Ga₀.₂As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9. View this article in WRRO
- An InGaAlAs-InGaAs two-color photodetector for ratio thermometry. IEEE Transactions on Electron Devices, 61(3), 838-843. View this article in WRRO
- Linear array of InAs APDs operating at 2 µm.. Opt Express, 21(22), 25780-25787.
- Evaluation of InAs quantum dots on Si as optical modulator. Semiconductor Science and Technology, 28(9).
- Temperature dependence of impact ionization in InAs.. Opt Express, 21(7), 8630-8637. View this article in WRRO
- Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry. JOURNAL OF INSTRUMENTATION, 8.
- An InGaAs/AlAsSb avalanche photodiode with a small temperature coefficient of breakdown. IEEE Photonics Journal, 5(4). View this article in WRRO
- Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes. Optics Express, 20(28), 29568-29576.
- Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes. IEEE Transactions on Electron Devices, 59(4), 1063-1067. View this article in WRRO
- A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon. Journal of Instrumentation, 7(8).
- Cryogenic converter for superconducting coil control. IET Power Electronics, 5(6), 739-746.
- Excess noise characteristics of thin AlAsSb APDs. IEEE Transactions on Electron Devices, 59(5), 1475-1479.
- 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics Express, 20(10), 10446-10452. View this article in WRRO
- Planar InAs photodiodes fabricated using He ion implantation. Optics Express, 20(8), 8575-8583. View this article in WRRO
- Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors. Journal of Applied Physics, 111(3).
- Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 310-313.
- Low noise avalanche photodiodes incorporating a 40 nm ALASSB avalanche region. IEEE Journal of Quantum Electronics, 48(1), 36-41.
- High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.. Opt Express, 19(23), 23341-23349.
- High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes.. Opt Lett, 36(21), 4287-4289.
- AlAsSb Avalanche Photodiodes with a Sub-mV/K Temperature Coefficient of Breakdown Voltage. IEEE J QUANTUM ELECT, 47(11), 1391-1395. View this article in WRRO
- Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. IEEE J QUANTUM ELECT, 47(8), 1123-1128.
- Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors. IEEE T ELECTRON DEV, 58(6), 1696-1701.
- Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE J QUANTUM ELECT, 47(6), 858-864.
- Noise, Gain, and Responsivity in Low-Strain Quantum Dot Infrared Photodetectors with up to 80 Dot-in-a-Well Periods. IEEE J QUANTUM ELECT, 47(5), 607-613.
- InAs avalanche photodiodes for X-ray detection. Journal of Instrumentation, 6(12).
- Development of high temperature AlGaAs soft X-ray photon counting detectors. Journal of Instrumentation, 6(12).
- Three-dimensional measurement of composition changes in InAs/GaAs quantum dots. Journal of Physics: Conference Series, 326(1).
- Implementation of an algorithmic spectrometer using Quantum Dot Infrared Photodetectors. Infrared Physics and Technology, 54(3), 228-232.
- Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors. IEEE Journal of Quantum Electronics, 47(2), 190-197. View this article in WRRO
- InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm. IEEE Transactions on Electron Devices, 58(2), 486-489.
- Temperature dependence of AlGaAs soft X-ray detectors. NUCL INSTRUM METH A, 621(1-3), 453-455.
- Temperature Dependence of Avalanche Breakdown in InP and InAlAs. IEEE J QUANTUM ELECT, 46(8), 1153-1157.
- Modeling of intraband absorption for quantum dot-in-well structures with low computational cost. Journal of Physics: Conference Series, 242.
- Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57(10), 2631-2638. View this article in WRRO
- Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE PHOTONIC TECH L, 21(13), 866-868. View this article in WRRO
- Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s. IEEE J QUANTUM ELECT, 45(7), 833-839. View this article in WRRO
- A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes. IEEE J QUANTUM ELECT, 45(5-6), 566-571. View this article in WRRO
- Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. APPL PHYS LETT, 93(11).
- AlGaAs diodes for X-ray spectroscopy. NUCL INSTRUM METH A, 594(2), 202-205.
- Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model. J APPL PHYS, 104(1).
- Material considerations for avalanche photodiodes (Invited paper). IEEE J SEL TOP QUANT, 14(4), 998-1009.
- Avalanche noise characteristics in submicron InP diodes. IEEE J QUANTUM ELECT, 44(3-4), 378-382.
- Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
- Statistics of avalanche current buildup time in single-photon avalanche diodes. IEEE J SEL TOP QUANT, 13(4), 906-910.
- Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
- Effects of dead space on breakdown probability in Geiger mode avalanche photodiode. J MOD OPTIC, 54(2-3), 353-360.
- Avalanche multiplication in InAlAs. IEEE T ELECTRON DEV, 54(1), 11-16.
- Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end. MEAS SCI TECHNOL, 17(7), 1941-1946.
- Excess noise measurement in In0.53Ga0.47As. IEEE PHOTONIC TECH L, 17(11), 2412-2414. View this article in WRRO
- Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE J QUANTUM ELECT, 41(8), 1092-1096.
- Exponential time response in analogue and Geiger mode avalanche photodiodes. IEEE T ELECTRON DEV, 52(7), 1527-1534. View this article in WRRO
- High current InP/InGaAs evanescently coupled waveguide phototransistor. IEE P-OPTOELECTRON, 152(2), 140-144.
- Surface passivation of InP/InGaAs heterojunction bipolar transistors. SEMICOND SCI TECH, 19(6), 720-724.
- Impact ionization in submicron silicon devices. J APPL PHYS, 95(10), 5931-5933.
- Temperature dependence of electron impact ionization in In0.53Ga0.47As. APPL PHYS LETT, 84(13), 2322-2324.
- A comparison of avalanche breakdown probabilities in semiconductor materials. Journal of Modern Optics, 51(9-10), 1315-1321.
- Temperature dependent low-field electron multiplication in In0.53Ga0.47As. APPL PHYS LETT, 83(14), 2820-2822.
- Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE T ELECTRON DEV, 50(10), 2021-2026. View this article in WRRO
- Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE T ELECTRON DEV, 50(4), 901-905. View this article in WRRO
- Calculation of APD impulse response using a space- and time-dependent ionization probability distribution function. J LIGHTWAVE TECHNOL, 21(1), 155-159.
- View this article in WRRO
- View this article in WRRO
- Very Low Excess Noise Al₀.₇₅Ga₀.₂₅As₀.₅₆Sb₀.₄₄ Avalanche Photodiode. Optics Express.
- InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10(10), P10030-P10030. View this article in WRRO
- Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9(08), T08005-T08005. View this article in WRRO
Conference proceedings papers
- Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection. Optical Components and Materials XX, 28 January 2023 - 3 February 2023.
- Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. Optical Components and Materials XIX, 22 January 2022 - 28 February 2022.
- Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection. Optical Components and Materials XIX, 22 January 2022 - 28 February 2022.
- Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 21 September 2020 - 25 September 2020.
- High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation). Optical Components and Materials XVII, 1 February 2020 - 6 February 2020.
- AlGaAsSb Avalanche Photodiodes. 2018 IEEE Photonics Conference (IPC), 30 September 2018 - 4 October 2018.
- Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- Progress in low light-level InAs detectors- towards Geiger-mode detection. Advanced Photon Counting Techniques XI View this article in WRRO
- High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016. View this article in WRRO
- InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
- Temperature dependence of avalanche gain in Al
0.85 Ga0.15 As0.56 Sb0.44 APD. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016. - Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. 2016 IEEE 6th International Conference on Photonics (ICP), 14 March 2016 - 16 March 2016. View this article in WRRO
- InAs-QDIP hybrid broadband infrared photodetector. MRS Advances, Vol. 1(48) (pp 3301-3306)
- Planar InAs avalanche photodiodes. 2015 IEEE Photonics Conference (IPC), 4 October 2015 - 8 October 2015.
- InAs photodiode for low temperature sensing. Sensors, Systems, and Next-Generation Satellites XIX View this article in WRRO
- A low noise op-amp transimpedance amplifier for LIDAR applications. 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 7 December 2014 - 10 December 2014.
- InAs APD with solid state photomultiplier characteristics. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- InAsBi photodiode operating in the MWIR. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- Planar InAs p-i-n photodiodes fabricated using ion implantation. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- Demonstration of an InAsBi photodiode operating in the MWIR. Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
- Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
- High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp 78-80)
- Planar InAs photodiodes fabricated using He ion implantation. 2012 IEEE Photonics Conference, IPC 2012 (pp 165-166)
- InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp 220-221)
- InAs quantum dot photodetector operating at 1.3 μm grown on Silicon. 2012 IEEE Photonics Conference, IPC 2012 (pp 167-168)
- GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
- Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
- Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
- InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
- High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
- InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 276-277)
- Thin AlAsSb avalanche regions with sub-mV/K temperature coefficients of breakdown voltage and very low excess noise factors. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 278-279)
- Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm based spectrometer. INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
- Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 706-707)
- Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7838
- Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
- High gain InAs electron-avalanche photodiodes for optical communication. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 409-412)
- InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
- Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
- The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II
- Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
- The development of extremely low noise InAs electron APDs for SWIR active or passive imaging. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
- InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
- Low noise InAs avalanche photodiodes for high sensitivity FPAs. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
- InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp 296-297)
- Infrared photodiodes based on Type-II strained layer superlattices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
- Multiple stack quantum dot infrared photodetectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
- Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
- A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
- Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80)
Patents
Software / Code
Datasets
- Data for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.
- Few-photon detection using InAs avalanche photodiodes.
- Data for RSOS paper: Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown.
- Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise.
Other
- Guest Editorial: Selected Papers from the 29th Semiconductor and Integrated OptoElectronics (SIOE), 2015. IET Optoelectronics, 10(2), 33-33.
- Temperature dependence of impact ionization in InAs: erratum. Optics Express, 22(21), 25923-25923.
- Feature issue introduction: Quantum dots for photonic applications. Optics Express, 20(10), 10721-10723.
- Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters, 124(25).
- Teaching activities
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- Teaching: EEE337, EEE348 and EEE6216
- Undergraduate tutoring and project supervision
- Professional activities and memberships
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- Head of Department
- Member of Departmental Athena SWAN SAT
- Chair in Photon Detectors, Leads the Advanced Detector Centre
- Research students
Student Degree Status Primary/Secondary Das S D PhD Graduated Primary Gomes R B PhD Graduated Primary Hobbs M J PhD Graduated Primary Idris A S PhD Graduated Primary Liew Tat Mun S PhD Graduated Primary Marshall A R J PhD Graduated Primary Moreno Guerrero M A MPhil Graduated Primary Rowe M MPhil Graduated Primary White B S PhD Graduated Primary Xie J PhD Graduated Primary Xie S PhD Graduated Primary Zhou X PhD Graduated Primary GoH Y L PhD Graduated Secondary Goldberg G R PhD Graduated Secondary Ker P PhD Graduated Secondary Meng X PhD Graduated Secondary Tan S PhD Graduated Secondary