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Room temperature continuous–wave green lasing from an InGaN microdisk on silicon

The last four decades have seen unparalleled impact of the semiconductor industry driven by silicon technology.

28 November 2014 | Scientific Reports

Joint research centre with Nanjing University is opened

An official opening ceremony was held on 7 July 2014 for the joint research centre for wide bandgap semiconductor optoelectronics. The VC and PVCs and a senior delegation from Nanjing University attended the ceremony.

7 July 2014

Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold

Electronic integrated circuits face increasing challenges for current communication and computation technologies due to their limits in fundamental speed and bandwidth.

23 May 2014 | Scientific Reports