News News stories 29 May 2022 Major breakthrough in stabilizing colors for micro-displays Our approach provides a simple solution to resolving a 30 year issue in the field of III-nitride optoelectronics and achieves μLEDs with excellent colour stability. Published in ACS Photonics 24 May 2022 Major technological breakthrough in the field of microdisplays Achieving red microLEDs with a record quantum efficiency represents a major technological breakthrough and has applications in AR and VR microdisplays. Published in ACS Applied Electronic Materials 4 January 2022 The University leads collaboration on development of next generation micro-displays and visible light communication Professor Tao Wang is leading a £1.9M project in collaboration with American Universities Harvard and MIT and UK Universities Strathclyde and Bath, to advance the technology for the next generation of micro-displays and visible light communication. 7 May 2021 New integration concept for microLEDs A new paper from the Centre for GaN Materials and Devices proposes a different type of integration concept for microLEDs – an epitaxial approach aiming to monolithically integrate μLEDs and high electron mobility transistors on a single chip. Search Industry Open Day 2019 Following the success of the first Industry Open Day in 2017, the Centre for GaN Materials and Devices opened its doors once more in order to share their latest research insights and further strengthen links with industry. 25 January 2019 Industry Open Day 2019 announced The Centre for GaN Materials and Devices Industry Open Day 2019 is designed for photonics and electronics companies who are considering a research collaboration to harness the innovation opportunities of III-nitride semiconductors. 16 October 2018 Professor Tao Wang at SSLCHINA 2018 In October, Professor Tao Wang, Director of The Centre for GaN Materials and Devices, will give a plenary talk at The 15th China International Forum on Solid State Lighting in Shenzhen, China. 5 September 2018 China-UK Workshop on Wide Band-gap Semiconductor Materials and Devices In June 2018, over 40 delegates from the UK and China attended the first China-UK workshop on Wide Band-gap Semiconductor Materials and Devices, hosted by The Centre for GaN Materials and Devices. 18 July 2018 PhD success for Yun Zhang Yun Zhang has successfully defended his PhD viva. 10 November 2017 Pagination First page « First Previous page ‹ Previous Page 1 Page 2 Page 3 Current page 4
