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Electroluminescence (EL) spectra μLEDs with (a) and without (b) DBR as function of injection current; EL emission wavelength and full-width half-maximum (FWHM) of EL spectra versus injection current (I) (c); EL emission images of μLEDs with DBR (d) and without DBR (e) as function of injection current.

Major breakthrough in stabilizing colors for micro-displays

Our approach provides a simple solution to resolving a 30 year issue in the field of III-nitride optoelectronics and achieves μLEDs with excellent colour stability.

Published in ACS Photonics
Red emission

Major technological breakthrough in the field of microdisplays

Achieving red microLEDs with a record quantum efficiency represents a major technological breakthrough and has applications in AR and VR microdisplays.

Published in ACS Applied Electronic Materials
VLC system

The University leads collaboration on development of next generation micro-displays and visible light communication

Professor Tao Wang is leading a £1.9M project in collaboration with American Universities Harvard and MIT and UK Universities Strathclyde and Bath, to advance the technology for the next generation of micro-displays and visible light communication.

New integration concept for microLEDs

A new paper from the Centre for GaN Materials and Devices proposes a different type of integration concept for microLEDs – an epitaxial approach aiming to monolithically integrate μLEDs and high electron mobility transistors on a single chip.
ACS Appl. Mater. Interfaces 2020, 12, 11, 12949-12954

Intrinsic limits of GaN electronics

A new study explores an approach toward the intrinsic limits of GaN electronics.
Gancentre - epipix

EpiPix Ltd developing “game-changing micro-LED technology”

EpiPix Ltd, a new spin-out company developing the next generation of micro-LED technology, has officially launched this week. EpiPix Ltd are developing and commercialising game-changing micro-LED technology for photonics applications.
Professor Tao Wang giving a presentation

Industry Open Day 2020

The Centre for GaN Materials and Devices recently hosted their third Industry Open Day to share research insights, advances for manufacturing III-nitride semiconductor devices and opportunities for industry collaboration.
Exterior shot of The Diamond building

Industry Open Day 2020 announced

This event is designed for photonics and electronics companies who are considering a research collaboration to harness the innovation opportunities of III-nitride semiconductors.
GaN Centre logo

PhD success for Suneal Ghataora

Suneal Ghataora has successfully defended his PhD viva.