Centre for GaN Materials and Devices

We develop cutting-edge technologies and perform advanced research on III-nitride materials and devices. We are keen to share research insights, build successful partnerships and strengthen links with industry and academia.

Research highlights

Electroluminescence (EL) spectra μLEDs with (a) and without (b) DBR as function of injection current; EL emission wavelength and full-width half-maximum (FWHM) of EL spectra versus injection current (I) (c); EL emission images of μLEDs with DBR (d) and without DBR (e) as function of injection current.

29 May 2022

Major breakthrough in stabilizing colors for micro-displays

Our approach provides a simple solution to resolving a 30 year issue in the field of III-nitride optoelectronics and achieves μLEDs with excellent colour stability.

Published in ACS Photonics

24 May 2022

Major technological breakthrough in the field of microdisplays

Achieving red microLEDs with a record quantum efficiency represents a major technological breakthrough and has applications in AR and VR microdisplays.

Published in ACS Applied Electronic Materials

4 January 2022

The University leads collaboration on development of next generation micro-displays and visible light communication

Professor Tao Wang is leading a £1.9M project in collaboration with American Universities Harvard and MIT and UK Universities Strathclyde and Bath, to advance the technology for the next generation of micro-displays and visible light communication.

7 May 2021

New integration concept for microLEDs

A new paper from the Centre for GaN Materials and Devices proposes a different type of integration concept for microLEDs – an epitaxial approach aiming to monolithically integrate μLEDs and high electron mobility transistors on a single chip.

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About the Centre