Professor Merlyne De Souza
School of Electrical and Electronic Engineering
Chair in Micro Electronics
Semiconductor Materials and Devices Research Group
![Headshot of Merlyne de Souza](http://cdn.sheffield.ac.uk/sites/default/files/styles/profile_square_lg_1x/public/2020-07/Merlyne.png?h=ed0ea6f1&itok=Bma_i_dH)
![Profile picture of Headshot of Merlyne de Souza](http://cdn.sheffield.ac.uk/sites/default/files/styles/profile_modal/public/2020-07/Merlyne.png?h=ed0ea6f1&itok=etNuGM0i)
+44 114 222 5167
Full contact details
School of Electrical and Electronic Engineering
- Profile
-
I graduated with a BSc in Physics and Mathematics (1985) from the University of Mumbai, a BE. in Electronics and Communications Engineering (1988) from the Indian Institute of Science, Bangalore and a PhD from the University of Cambridge (1994).
I joined as a Junior Research fellow in ‘95, was promoted to a Senior Research fellow in ‘98 and was appointed Professor in Electronics and Materials at the Emerging Technologies Research Centre, De Montfort University in 2003.
I joined the EEE department at Sheffield as Professor of Microelectronics in 2007. I work in multi-disciplinary research focused on the physics of devices, materials and their microelectronic applications in computing, communications and energy conversion.
Until now, microelectronics has relied on the versatility of silicon CMOS to deliver enhancement in performance by scaling the MOS transistor. I have worked on various aspects of CMOS such as reliability, high-k gate oxides and Indium for retrograde channels, first introduced in production at the 65 nm node.
However, scaling (as we know it) is now nearing an end and alternate materials and device architectures are required for future semiconductor applications.
Supervised learning for image and speech recognition, autonomous driving and medical diagnosis in Artificial Intelligence (AI) presently rely on CMOS based deep neural networks.
These are inherently power-hungry due to a continuous exchange of information between the required large volume of memory and processing units.
It is expected that such Von Neumann architectures will be replaced by neuromorphic systems that are more akin to a biological brain.
Our team has recently demonstrated ZnO/Ta2O5 solid electrolyte thin film transistors with synaptic capabilities.
I am interested in exploring such memristive devices in neuromorphic applications, electrochemical storage and flexible electronics for health.
My interest in more efficient semiconductors, smart materials and systems that leave a smaller footprint on the environment, spans to GaN for power and RF applications, that I have previously explored in equivalent silicon- based device technologies such as the IGBT and the RF LDMOSFET.
These are driven by the automotive, aerospace, space, renewables, telecoms and consumer/industrial electronics sectors.
Our recent work includes a new class of harmonic RF power amplifiers with record efficiency and output power prototyped using commercial GaN devices.
We are also working towards a p-type MOSHFET and magnetic thin films for “CMOS in GaN” in power management integrated circuits and current sensors.
- Qualifications
-
- PhD (Engineering), University of Cambridge 1994
- BEng (Electronics & Communications Engineering), Indian Institute of Science Bangalore 1988
- BSc (Physics & Mathematics), University of Bombay 1985
- Research interests
-
· GaN: CMOS, heterogeneous Integration, on-chip inductors/magnetic materials for Power Management Integrated Circuits and power devices.
· Sensors and actuators for health applications.
· Memory devices for neuromorphic applications.
· RF Power Amplifiers.
· Perovskite solar cells.
- Publications
-
Journal articles
- Recycling of reduced graphene oxide from graphite rods in disposable zinc battery applicable to optical sensing. Ceramics International.
- Topological Quantum Switching enabled Neuroelectronic Synaptic Modulators for Brain Computer Interface. Advanced Materials, e2306254.
- After 75 Years of the Transistor: An Age of Neuromorphic Computing [Women in Electronic Devices]. IEEE Electron Devices Magazine, 1(2), 57-58.
- Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems. Advanced Science, e2300791.
- A novel micro-scaled multi-layered optical stress sensor for force sensing. Journal of Computational Electronics, 22(2), 768-782.
- Ease of Matching a Load Line Impedance in a 25 W Contiguous Mode Class BJFTEXPRESERVE0 Broadband Amplifier. IEEE Microwave and Wireless Components Letters, 1-0.
- Origins of the Schottky barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN heterostructure. ACS Applied Electronic Materials.
- Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study. AIP Advances, 12(6). View this article in WRRO
- Reservoir computing for temporal data classification using a dynamic solid electrolyte ZnO thin film transistor. Frontiers in Electronics, 3. View this article in WRRO
- 3D microstructured frequency selective surface based on carbonized polyimide films for terahertz applications. Advanced Optical Materials.
- Hierarchically interlaced 2D copper iodide/MXene composite for high thermoelectric performance. physica status solidi (RRL) – Rapid Research Letters.
- Necessary conditions for steep switching in a constant Resistor-Capacitor RCFET. MRS Advances.
- Reactive inkjet printing of graphene based flexible circuits and radio frequency antennas. Journal of Materials Chemistry C.
- Designing a broadband amplifier without loadpull. IEEE Microwave and Wireless Components Letters. View this article in WRRO
- Off-state operation of a three terminal ionic FET for logic-in-memory. IEEE Journal of the Electron Devices Society. View this article in WRRO
- Development of GaN transducer and on-chip concentrator for galvanic current sensing. IEEE Transactions on Electron Devices. View this article in WRRO
- A p-Channel GaN Heterostructure Tunnel FET With High ON/OFF Current Ratio. IEEE Transactions on Electron Devices. View this article in WRRO
- High-Efficiency Modes Contiguous With Class B/J and Continuous Class F
$^{-1}$ - An Integrated On-Chip Flux Concentrator for Galvanic Current Sensing. IEEE Electron Device Letters, 39(11), 1752-1755. View this article in WRRO
- Investigation of the Effect of Weak Non-Linearities on P1dB and Efficiency of Class B/J/J* Amplifiers. IEEE Transactions on Circuits and Systems II: Express Briefs, 65(9), 1159-1163. View this article in WRRO
- Negative Capacitance beyond Ferroelectric Switches. ACS Applied Materials and Interfaces, 10(23), 19812-19819. View this article in WRRO
- Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN. Applied Physics Letters, 112(15). View this article in WRRO
- Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices, 65(4), 1440-1446. View this article in WRRO
- The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics, 51(16), 163001-163001. View this article in WRRO
- Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors. ACS Applied Materials and Interfaces, 10(11), 9782-9791. View this article in WRRO
- Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors. IET Power Electronics, 11(4), 675-680. View this article in WRRO
- An E-Mode p-Channel GaN MOSHFET for a CMOS Compatible PMIC. IEEE Electron Device Letters, 38(10), 1449-1452. View this article in WRRO
- Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide. ACS Applied Materials and Interfaces, 9(2), 1609-1618. View this article in WRRO
- Separation of bulk and contact interface degradation in thin film silicon solar cells. Journal of Renewable and Sustainable Energy, 7(6), 063115-063115.
- Decoupling of epitaxial graphene via gold intercalation probed by dispersive Raman spectroscopy. Journal of Applied Physics, 117(18), 183103-183103. View this article in WRRO
- Design of Schottky Contacts for Optimum Performance of Thin-Film Silicon Solar Cells. IEEE Journal of Photovoltaics, 5(1), 22-27. View this article in WRRO
- Compact core model for Symmetric Double-Gate Junctionless Transistors. Solid-State Electronics, 94, 91-97.
- Erratum: Extraction of Schottky barrier at the F-doped SnO
2 /TiO2 interface in Dye Sensitized solar cells (Journal of Renewable and Sustainable Energy (2014) 6 (013142)). Journal of Renewable and Sustainable Energy, 6(2). - Extraction of Schottky barrier at the F-doped SnO
2 /TiO2 interface in Dye Sensitized solar cells. Journal of Renewable and Sustainable Energy, 6(1). - Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells. Journal of Applied Physics, 114(18).
- Communication: electronic band gaps of semiconducting zig-zag carbon nanotubes from many-body perturbation theory calculations.. J Chem Phys, 136(18), 181101.
- D
it extraction from conductance-frequency measurements using a transmission-line model in weak inversion of poly/TiN/HfO2 nMOSFETs. IEEE Transactions on Electron Devices, 59(3), 827-834. - Superlattice of resonators on monolayer graphene created by intercalated gold nanoclusters. EPL, 91(6).
- A methodology for extraction of the density of interface states in the presence of frequency dispersion via the conductance technique. IEEE Transactions on Electron Devices, 57(7), 1642-1650.
- Anomalous n-type electrical behaviour of Pd-contacted CNTFET fabricated on small-diameter nanotube. Nanotechnology, 21(21).
- Evaluation of the Coulomb-limited mobility in high- κ dielectric metal oxide semiconductor field effect transistors. Journal of Applied Physics, 107(6).
- Understanding the role of the insulator in the performance of ZnO TFTs. THIN SOLID FILMS, 518(4), 1177-1179.
- Electronic properties of extended graphene nanomaterials from GW calculations. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(11-12), 2572-2576.
- Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers. IEEE Transactions on Microwave Theory and Techniques, 57(11), 2643-2651. View this article in WRRO
- Surface intercalation of gold underneath a graphene monolayer on SiC(0001) studied by scanning tunneling microscopy and spectroscopy. Applied Physics Letters, 94(26).
- Role of hybridization on the Schottky barrier height of carbon nanotube field effect transistors. Physical Review B - Condensed Matter and Materials Physics, 79(12).
- SO-limited mobility in a germanium inversion channel with non-ideal metal gate. Thin Solid Films, 517(1), 412-415.
- The effect of gate-bias stress and temperature on the performance of ZnO thin-film transistors. IEEE Transactions on Device and Materials Reliability, 8(2), 277-282.
- A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators. IEEE Transactions on Electron Devices, 55(5), 1109-1115. View this article in WRRO
- Impact of aluminum nitride as an insulator on the performance of zinc oxide thin film transistors. Applied Physics Letters, 92(9).
- Impact of a nonideal metal gate on surface optical phonon-limited mobility in high-κ gated MOSFETs. IEEE Transactions on Electron Devices, 54(11), 2991-2997.
- Analysis of P
b centers in ultrathin hafnium silicate gate stacks. IEEE Transactions on Electron Devices, 54(9), 2551-2555. - Performance of ZnO TFTs with AlN as Insulator. MRS Proceedings, 1035.
- Analytic large-signal modeling of silicon RF power MOSFETs. IEEE Transactions on Microwave Theory and Techniques, 55(5), 829-837.
- Impact of Polarons on the Mobility of Non-Ideal Metal/High-k Gate Stack MOSFETs. ECS Meeting Abstracts, MA2007-01(29), 1102-1102.
- Design for reliability: The RF power LDMOSFET. IEEE Transactions on Device and Materials Reliability, 7(1), 162-174.
- Investigating the stability of zinc oxide thin film transistors. Applied Physics Letters, 89(26).
- The Impact of Fermi Pinning on Thermal Properties of the Instabilities in ZnO TFTs. MRS Proceedings, 957.
- Impact of the size 4 cluster on low temperature indium diffusion in silicon. JOURNAL OF PHYSICS-CONDENSED MATTER, 17(22), S2165-S2170.
- Innovation in power semiconductor industry: Past and future. IEEE Transactions on Engineering Management, 52(4), 429-439.
- MOS control device concepts for AC-AC matrix converter applications: The HCD concept for high-efficiency anode-gated devices. IEEE Transactions on Electron Devices, 52(9), 2075-2080.
- A low temperature combination method for the production of ZnO nanowires. Nanotechnology, 16(10), 2188-2192.
- Influence of mobility model on extraction of stress dependent source-drain series resistance. Microelectronics Reliability, 44(1), 25-32.
- Structure and diffusion of interstitial boron pairs in silicon. Physical Review B - Condensed Matter and Materials Physics, 69(3).
- A novel double RESURF LDMOS for HVIC's. Microelectronics Journal, 35(3), 305-310.
- Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEE Proceedings: Circuits, Devices and Systems, 151(3), 203-206.
- Comparative study of drift region designs in RF LDMOSFETs. IEEE Transactions on Electron Devices, 51(8), 1296-1303.
- Progress in MOS-controlled bipolar devices and edge termination technologies. Microelectronics Journal, 35(3), 235-248.
- 1.7 kV NPTV-groove clustered IGBT. IEE Proceedings: Circuits, Devices and Systems, 151(3), 265-268.
- Analysis and optimisation of the trench gated emitter switched thyristor. Solid-State Electronics, 48(12), 2207-2211.
- Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena. Physical Review B - Condensed Matter and Materials Physics, 68(19).
- Characterisation of series resistance degradation through charge pumping technique. MICROELECTRONICS RELIABILITY, 43(4), 617-624.
- A high performance RF LDMOSFET in thin film SOI technology with step drift profile. Solid-State Electronics, 47(11), 1937-1941.
- Dynamics of self-interstitial cluster formation in silicon. Physical Review B - Condensed Matter and Materials Physics, 66(4), 452051-452056.
- Growth of precursors in silicon using pseudopotential calculations. Physical Review Letters, 88(8), 085501/1-085501/4.
- High voltage polycrystalline thin-film transistor with variable doping slots in the offset region. Applied Physics Letters, 80(12), 2192-2194.
- Analysis of the breakdown voltage in SOI and SOS technologies. Solid-State Electronics, 46(2), 255-261.
- Striped anode engineering: A concept for fast switching power devices. Solid-State Electronics, 46(6), 903-909.
- Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET). IEEE Electron Device Letters, 23(12), 725-727.
- 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology. Solid-State Electronics, 45(1), 71-77.
- Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices. Solid-State Electronics, 45(1), 127-132.
- Radial confinement in lateral power devices. Microelectronics Journal, 32(5-6), 481-484.
- Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip. Microelectronics Journal, 32(5-6), 527-536.
- Investigation into the mechanisms limiting the safe operating area of a LIGBT in DI and DELDI technologies. Microelectronics Journal, 32(2), 121-126.
- A study of fully coordinated precursors in silicon using the Ackland potential. Physica B: Condensed Matter, 304(1-4), 483-488.
- A segmented anode, npn controlled lateral insulated gate bipolar transistor. Solid-State Electronics, 45(7), 1055-1058.
- A novel metal field plate edge termination for power devices. Microelectronics Journal, 32(4), 323-326.
- A novel area efficient floating field limiting ring edge termination technique. SOLID-STATE ELECTRONICS, 44(8), 1381-1386.
- The Kirk effect in the DELDI technology. MICROELECTRONICS JOURNAL, 31(3), 175-185.
- Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications. Solid-State Electronics, 44(10), 1869-1873.
- Local charge control technique to improve the forward bias safe operating area of LIGBT. Solid-State Electronics, 44(7), 1213-1218.
- 1200 V fully implanted JI technology. Electronics Letters, 36(18), 1587-1589.
- Radial confinement: Concept for lateral power devices. Electronics Letters, 36(14), 1242-1244.
- A lateral MOS-controlled thyristor-enhanced insulated gate bipolar transistor. SOLID-STATE ELECTRONICS, 43(10), 1845-1853.
- Design of novel high side power MOSFET based on HVIC process. Electronics Letters, 35(21), 1880-1880.
- Novel gate geometry for the IGBT: The trench planar insulated gate bipolar transistor (TPIGBT). IEEE Electron Device Letters, 20(11), 580-582.
- Planar self-interstitial in silicon. Physical Review Letters, 83(9), 1799-1801.
- A Monte Carlo study of the kickout mechanism of boron diffusion in silicon. Journal of Applied Physics, 79(5), 2418-2425.
- Double resurf technology for HVICs. Electronics Letters, 32(12), 1092-1093.
- The characteristic method applied to spin-coating in one dimension. Computational Materials Science, 4(3), 233-240.
- An analysis of the kickout mechanism in silicon. Solid-State Electronics, 38(4), 867-872.
- A study of the configurations of boron in silicon using an empirical approach. Computational Materials Science, 3(1), 69-77.
- Maximum distance of anticodes. Electronics Letters, 27(17), 1564-1564.
- Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs. Micromachines, 14(8), 1606-1606.
- Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN. ACS Applied Electronic Materials.
Chapters
- Carbon nanotubes and graphene: From structural to device properties, Modeling, Characterization, and Production of Nanomaterials (pp. 271-303). Elsevier
- Carbon-based nanomaterials, Modeling, Characterization, and Production of Nanomaterials (pp. 203-231). Elsevier
Conference proceedings papers
- Class BJF⁻¹: Pushing the boundaries of the performance of RF Power Amplifiers.. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 3 March 2024 - 6 March 2024.
- A delay system reservoir based on a nano-ionic Solid Electrolyte FET*. 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 22 October 2023 - 25 October 2023.
- Reservoir Computing Based on a Solid Electrolyte ZnO TFT: An Attractive Platform for Flexible Edge Computing. 2023 IEEE International Flexible Electronics Technology Conference (IFETC), 13 August 2023 - 16 August 2023.
- A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 7 March 2023 - 10 March 2023.
- A Solid Electrolyte ZnO Thin Film Transistor for classification of spoken digits using Reservoir Computing. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 7 March 2023 - 10 March 2023.
- Characterization of traps in a Power Amplifier using a time domain approach. 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Vol. 00 (pp 1-3)
- Modelling Challenges for Enabling High Performance Amplifiers in 5G/6G Applications. 2021 28th International Conference on Mixed Design of Integrated Circuits and System, 24 June 2021 - 26 June 2021.
- A Ta2O5/ZnO Synaptic SE-FET for supervised learning in a crossbar, Vol. 00 (pp 1-3)
- A methodology to design broadband matching networks for continuum mode PAs. 2019 IEEE Asia-Pacific Microwave Conference (APMC), 10 December 2019 - 13 December 2019.
- View this article in WRRO
- An ultralow power 3-terminal memory device with write capability in the off-state. Proceedings of the 3rd Electron Devices Technology manufacturing conference.. Singapore, 13 March 2019 - 15 March 2019. View this article in WRRO
- View this article in WRRO
- View this article in WRRO
- On the Dynamic characteristics of Ferroelectric and Paraelectric FETs. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp 184-186) View this article in WRRO
- View this article in WRRO
- Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch. Proceedings of the 26th International Symposium on Industrial Electronics (pp 612-615), 19 June 2017 - 21 June 2017. View this article in WRRO
- View this article in WRRO
- Extending the bounds of performance in E-mode p-channel GaN MOSHFETs. 2016 IEEE International Electron Devices Meeting (IEDM) View this article in WRRO
- View this article in WRRO
- View this article in WRRO
- A study of the performance of solar cells for indoor autonomous wireless sensors. Proceedings of the 2016 10th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP) (pp 1-6)
- View this article in WRRO
- View this article in WRRO
- View this article in WRRO
- Understanding the Response of GaN HEMT to Optimization Criteria in RF Power Amplifiers Using the Analytic Approach. Proceedings of the Active and Passive RF devices Seminar (pp 8 (7 .)-8 (7 .)-8 (7 .)-8 (7 .))
- Transport Mechanism in Sub 100°C Processed High Mobility Polycrystalline ZnO Transparent Thin Film Transistors. Proceedings of the IEDM (pp 28.1.1-28.1.4)
- Next generation 1200V trench CIGBT for high voltage applications. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 10 May 2015 - 14 May 2015.
- The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship. 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 15 March 2015 - 19 March 2015.
- Designing high power RF amplifiers: An analytic approach. Proceedings of ICCDCS 2014 (pp 1-5)
- Are carbon nanotubes still a viable option for ITRS 2024?. Technical Digest - International Electron Devices Meeting, IEDM
- Analytical techniques for the simulation of electron transport in semiconductor systems. Proceedings of the International Conference on Optimisation of Electrical and Electronic Equipment, OPTIM (pp 822-826)
- RF power amplifier: Pushing the boundaries of performance versus cost. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8549
- High-k gate dielectric MOSFETs: Meeting the challenges of characterization and modeling. ECS Transactions, Vol. 35(4) (pp 563-580)
- Class-D power amplifiers using LDMOS and GaN power devices: A comparative analysis. Proceedings of the Mediterranean Electrotechnical Conference - MELECON (pp 691-694)
- Semi-analytical solutions to the Schroedinger-Poisson model of electron states. Proceedings of the International Conference on Optimisation of Electrical and Electronic Equipment, OPTIM (pp 180-184)
- Call for papers second international workshop on compact thin-film transistor (TFT) modeling for circuit simulation. 2009 Compact Thin-Film Transistor Modeling for Circuit Simulation, 25 September 2009 - 25 September 2009.
- Effect of Hydrazine on Al-Contacted Carbon Nanotube Field Effect Transistors Using Density Functional Theory. JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NO 1, Vol. 1(1) (pp 24-28)
- New analytical expressions for the design of linear power amplifier using GaN HEMTs. APMC 2009 - Asia Pacific Microwave Conference 2009 (pp 1112-1115)
- Ab initio investigation of charge transfer technique for control of Schottky contacts in CNTs. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18(7) (pp 729-734)
- Investigating the stability of thin film transistors with zinc oxide as the channel layer. 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL (pp 467-+)
- Influence of Chemical Dopant Technique to Reduce Schottky Barriers of Pd-Contacted CNTFETs. MRS Proceedings, Vol. 963
- Experimental study of the impact of so phonon scattering in high-κ gate dielectric MOSFETs. ECS Transactions, Vol. 3(3) (pp 49-56)
- Hot-carrier injection in step-drift rf power LDMOSFET. IEEE International Reliability Physics Symposium Proceedings, Vol. 2004-January(January) (pp 283-287)
- Hot-carrier injection in step-drift RF power LDMOSFET. 2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS (pp 283-287)
- Design of an RF LDMOSFET with deep drift and hot carrier immunity using time domain approach. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 241-244)
- Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT). IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 269-272)
- Device quality SiO
2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium - Proceedings, Vol. 716 (pp 317-323) - Progress in silicon RF Power MOS technologies-current and future trends. ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems
- Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers. PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (pp 227-231)
- Characterisation of dual gate lateral inversion layer emitter transistor. IEE Conference Publication(487) (pp 557-561)
- Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 79-82)
- Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs. Annual Proceedings - Reliability Physics (Symposium) (pp 108-111)
- A novel 'cool' insulated base transistor. 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS (pp 313-316)
- A new lateral insulated base emitter switched thyristor. ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 221-224)
- Capacitance Modelling of a Transistor for RF Power Amplifiers in 5G Applications. MOS-AK Workshop, 3 July 2022 - 5 July 2022.
- Landau Damping Effects on SO Limited Mobility. ECS Transactions, Vol. 6(16) (pp 61-71)
- Defect Interaction Mechanisms between Antimony and Indium in Silicon (pp 425-432)
- Dual gate lateral inversion layer emitter transistor. Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
- Degradation behaviour of polysilicon high voltage thin film transistors. Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)
- Recycling of reduced graphene oxide from graphite rods in disposable zinc battery applicable to optical sensing. Ceramics International.
- Professional activities and memberships
-
- Chair in Microelectronics, EEE Department, University of Sheffield (2007-)
- Research students
Student Degree Status Primary/Secondary Balakrishnapillai P PhD Graduated Primary Casterman D PhD Graduated Primary Chevaux N PhD Graduated Primary Corpus Mendoza A N PhD Graduated Primary Mathew D MPhil Graduated Primary Rasheduzzaman M PhD Graduated Primary Sicre S B F M PhD Graduated Primary Subramani N PhD Graduated Primary Baltynov T PhD Graduated Secondary Unni V PhD Graduated Secondary