Dr Robert Airey

Journal articles

• Desrat W, Piot W, Maude D, Wasilewski Z, Henini M & Airey R (2015) W line shape in the resistively detected nuclear magnetic resonance. Journal of Physics: Condensed Matter, 27(27).
• Shahid H, Childs DTD, Majid MA, Kennedy K, Airey R, Hogg RA, Clarke E, Spencer P & Murray R (2014) Gain spectrum measurement using the segmented contact method with an integrated optical amplifier. Journal of Applied Physics, 115(16), 163105-163105. View this article in WRRO
• Ekins-Daukes NJ, Lee K-H, Hirst L, Chan A, Führer M, Adams J, Browne B, Barnham KWJ, Stavrinou P, Connolly J , Roberts JS et al (2013) Controlling radiative loss in quantum well solar cells. Journal of Physics D: Applied Physics, 46(26), 264007-264007.
• Larsen K, Austin D, Sandall IC, Davies DG, Revin DG, Cockburn JW, Adawi AM, Airey RJ, Fry PW, Hopkinson M & Wilson LR (2012) Electrical modulation of the optical properties of mid-infrared metamaterials. Applied Physics Letters, 101(25).
• Orsi Gordo V, Herval LK, Galeti HV, Gobato YG, Brasil MJ, Marques GE, Henini M & Airey RJ (2012) Spin injection in n-type resonant tunneling diodes.. Nanoscale Res Lett, 7(1), 592-592. View this article in WRRO
• Galeti HVA, Galvão Gobato Y, Gordo VO, Dos Santos LF, Brasil MJSP, López-Richard V, Marques GE, Orlita M, Kunc J, Maude DK , Henini M et al (2012) Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes. Semiconductor Science and Technology, 27(1).
• Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ & Humphreys CJ (2012) Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films, 520(7), 3064-3070.
• Elsherif OS, Vernon-Parry KD, Evans-Freeman JH, Airey RJ, Kappers M & Humphreys CJ (2012) Characterisation of defects in p-GaN by admittance spectroscopy. Physica B: Condensed Matter, 407(15), 2960-2963.
• Dylewicz R, Hogg RA, Airey R, Paszkiewicz R, Bientsman P & Patela S (2011) Simulations of nanograting-assisted light coupling in GaN planar waveguide. Optical and Quantum Electronics, 42(9-10), 619-629.
• Majid MA, Childs DTD, Shahid H, Chen SM, Kennedy K, Airey RJ, Hogg RA, Clarke E, Howe P, Spencer PD & Murray R (2011) Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers. IEEE J SEL TOP QUANT, 17(5), 1334-1342.
• Majid MA, Childs DTD, Kennedy K, Airey R, Hogg RA, Clarke E, Spencer P & Murray R (2011) O-band excited state quantum dot bilayer lasers. Applied Physics Letters, 99(5), 051101-051101. View this article in WRRO
• Majid MA, Childs DTD, Shahid H, Chen SC, Kennedy K, Airey RJ, Hogg RA, Clarke E, Spencer P & Murray R (2011) Excited State Bilayer Quantum Dot Lasers at 1.3 µm. Japanese Journal of Applied Physics, 50(4S), 04DG10-04DG10.
• Majid MA, Childs DTD, Shahid H, Chen SC, Kennedy K, Airey RJ, Hogg RA, Clarke E, Spencer P & Murray R (2011) Excited State Bilayer Quantum Dot Lasers at 1.3 mu m. JPN J APPL PHYS, 50(4).
• dos Santos LF, Gobato YG, Teodoro MD, Lopez-Richard V, Marques GE, Brasil MJSP, Orlita M, Kunc J, Maude DK, Henini M & Airey RJ (2011) Circular polarization in a non-magnetic resonant tunneling device. NANOSCALE RES LETT, 6. View this article in WRRO
• Majid MA, Childs DTD, Shahid H, Airey R, Kennedy K, Hogg RA, Clarke E, Spencer P & Murray R (2011) 1.52 [micro sign]m electroluminescence from GaAs-based quantum dot bilayers. Electronics Letters, 47(1), 44-44.
• Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ & Humphreys CJ (2011) Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films.
• Galvo Gobato Y, Galeti HVA, Dos Santos LF, Lpez-Richard V, Cesar DF, Marques GE, Brasil MJSP, Orlita M, Kunc J, Maude DK , Henini M et al (2011) Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes. Applied Physics Letters, 99(23).
• Lee K-H, Barnham KWJ, Connolly JP, Browne BC, Airey RJ, Roberts JS, Fuhrer M, Tibbits TND & Ekins-Daukes NJ (2011) Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells. IEEE Journal of Photovoltaics.
• Elsherif OS, Vernon-Parry KD, Evans-Freeman JH, Airey RJ, Kappers M & Humphreys CJ (2011) Characterisation of defects in p-GaN by admittance spectroscopy. Physica B: Condensed Matter.
• Majid MA, Childs DTD, Shahid H, Chen S, Kennedy K, Airey RJ, Hogg RA, Clarke E, Howe P, Spencer PD & Murray R (2011) Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers. IEEE Journal on Selected Topics in Quantum Electronics.
• Makarovsky O, Feu WHM, Patanè A, Eaves L, Zhuang QD, Krier A, Beanland R & Airey R (2010) Hot electron transport and impact ionization in the narrow energy gap InAs1−xNx alloy. Applied Physics Letters, 96(5).
• Majid MA, Childs DTD, Airey R, Kennedy K, Hogg RA, Clarke E, Spencer P & Murray R (2010) Bilayer for extending the wavelength of QD lasers. Journal of Physics: Conference Series, 245, 012083-012083.
• Makarovsky O, Balanov AG, Eaves L, Patane A, Campion RP, Foxon CT & Airey RJ (2010) Using randomly distributed charges to create quantum dots. PHYS REV B, 81(3).
• Dylewicz R, Patela S, Hogg RA, Fry PW, Parbrook PJ, Airey R & Tahraoui A (2009) In-Plane Optical Anisotropy of GaN Refractive Index in Visible Light Region. IEEE Photonics Technology Letters, 21(14), 966-968.
• Dylewicz R, Patela S, Hogg RA, Fry PW, Parbrook PJ, Airey R & Tahraoui A (2009) Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl2/Ar-Based Inductively Coupled Plasma Dry Etching. Journal of Electronic Materials, 38(5), 635-639.
• Makarovsky O, Thomas O, Balanov AG, Eaves L, Patanè A, Campion RP, Foxon CT, Vdovin EE, Maude DK, Kiesslich G & Airey RJ (2008) Fock-Darwin-like quantum dot states formed by charged Mn interstitial ions.. Phys Rev Lett, 101(22), 226807.
• Wang T, Lee KB, Bai J, Parbrook PJ, Ranalli F, Wang Q, Airey RJ, Cullis AG, Zhang HX, Massoubre D , Gong Z et al (2008) The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. J PHYS D APPL PHYS, 41(9).
• Airey RJ, Lee KB, Parbrook PJ, Bai J, Ranalli F, Wang T & Hill G (2008) Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer. J PHYS D APPL PHYS, 41(9).
• dos Santos LF, Gobato YG, Lopez-Richard V, Marques GE, Brasil MJSP, Henini M & Airey RJ (2008) Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodes. APPL PHYS LETT, 92(14).
• Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-¿m GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. 2007 Quantum Electronics and Laser Science Conference, 1-2.
• Nelander R, Wacker A, Pereira MF, Revin DG, Soulby MR, Wilson LR, Cockburn JW, Krysa AB, Roberts JS & Airey RJ (2007) Fingerprints of spatial charge transfer in quantum cascade lasers. J APPL PHYS, 102(11).
• Spasov S, Allison G, Patanè A, Ignatov A, Eaves L, Maude DK, Hopkinson M & Airey R (2007) Magnetic field tuning of hot electron resonant capture in a semiconductor device. Applied Physics Letters, 91(14), 142104-142104.
• Aivaliotis P, Zibik EA, Wilson LR, Cockburn JW, Hopkinson M & Airey RJ (2007) Tuning the photoresponse of quantum dot infrared photodetectors across the 8-12 mu m atmospheric window via rapid thermal annealing. APPL PHYS LETT, 91(14).
• Revin DG, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Krysa AB, Wilson LR & Menzel S (2007) Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions. APPL PHYS LETT, 91(5).
• Alyamani A, Sanvitto D, Khalifa AA, Skolnick MS, Wang T, Ranalli F, Parbrook PJ, Tahraoui A & Airey R (2007) GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates. Journal of Applied Physics, 101(9), 093110-093110.
• Revin DG, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Krysa AB, Wilson LR & Menzel S (2007) InGaAs/AlAsSb/InP strain compensated quantum cascade lasers. APPL PHYS LETT, 90(15).
• Revin DG, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Krysa AB, Wilson LR & Menzel S (2007) InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 mu m. APPL PHYS LETT, 90(2).
• Roberts JS, Airey R, Hill G, Calder C, Barnham KWJ, Lynch M, Tibbits T, Johnson D, Pakes A & Grantham T (2007) Strain-balanced MQW pin solar cells grown using a robot-loading showerhead reactor. Journal of Crystal Growth, 298, 754-757.
• Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
• Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
• Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
• Revin DG, Cockburn JW, Wilson LR, Steer MJ, Airey RJ, Hopkinson M & Krysa AB (2007) InGaAs-AlAsSb quantum cascade lasers: Towards 3 μm emission. Optics InfoBase Conference Papers.
• Spasov S, Allison G, Patanè A, Eaves L, Hopkinson M & Airey R (2006) Modifying the electronic properties of GaAs∕AlAs superlattices with low-density nitrogen doping. Journal of Applied Physics, 100(6).
• Wang T, Lee KB, Bai J, Parbrook PJ, Airey RJ, Wang Q, Hill G, Ranalli F & Cullis AG (2006) Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer. APPL PHYS LETT, 89(8).
• Hopkinson M, Jin CY, Liu HY, Navaretti P & Airey R (2006) 1.34 [micro sign]m GaInNAs quantum well lasers with low room-temperature threshold current density. Electronics Letters, 42(16), 923-923.
• Revin DG, Wilson LR, Cockburn JW, Krysa AB, Roberts JS & Airey RJ (2006) Intersubband spectroscopy of quantum cascade lasers under operating conditions. APPL PHYS LETT, 88(13).
• Fowler D, Patané A, Ignatov A, Eaves L, Henini M, Mori N, Maude DK & Airey R (2006) Current flow and energy dissipation in low-dimensional semiconductor superlattices. Applied Physics Letters, 88(5).
• Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Offermans P, Koenraad PM & Wolter JH (2006) Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
• Vitiello MS, Scamarcio G, Spagnolo V, Revin DG, Cockburn J, Steer MJ & Airey RJ (2005) Electronic spatial distribution of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum-cascade lasers. J APPL PHYS, 98(8).
• Bushnell DB, Tibbits TND, Barnham KWJ, Connolly JP, Mazzer M, Ekins-Daukes NJ, Roberts JS, Hill G & Airey R (2005) Effect of well number on the performance of quantum-well solar cells. Journal of Applied Physics, 97(12).
• Wang T, Ranalli F, Parbrook PJ, Airey R, Bai J, Rattlidge R & Hill G (2005) Fabrication and optical investigation of a high-density GaN nanowire array. Applied Physics Letters, 86(10).
• Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Offermans P, Koenraad PM & Wolter JH (2005) Ingaas-alassb quantum cascade lasers emitting at 4.4 μm. Optics InfoBase Conference Papers.
• Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ, Airey RJ & Hopkinson M (2004) InGaAs/AlAsSb quantum cascade lasers. APPL PHYS LETT, 85(18), 3992-3994.
• Revin DG, Steer M, Wilson LR, Airey RJ, Cockburn JW, Zibik EA & Green RP (2004) InGaAs-AlAsSb quantum cascade structures emitting at 3.1 mu m. ELECTRON LETT, 40(14), 874-875.
• Revin DG, Wilson LR, Carder DA, Cockburn JW, Steer MJ, Hopkinson M, Airey R, Garcia M, Sirtori C, Rouillard Y , Barate D et al (2004) Measurements of optical losses in mid-infrared semiconductor lasers using Fabry–Pérot transmission oscillations. Journal of Applied Physics, 95(12), 7584-7587.
• Endicott J, Ibáñez J, Patanè A, Eaves L, Bissiri M, Hopkinson M, Airey R, Hill G, Gollub D & Forchel A (2004) Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling. Physica E: Low-dimensional Systems and Nanostructures, 21(2-4), 892-896.
• Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ, Airey RJ & Hopkinson M (2004) lambda similar to 4-5.3 mu m intersubband emission from InGaAs-AlAsSb quantum cascade structures. APPL PHYS LETT, 84(9), 1447-1449.
• Connolly LG, Lidzey DG, Butté R, Adawi AM, Whittaker DM, Skolnick MS & Airey R (2003) Strong coupling in high-finesse organic semiconductor microcavities. Applied Physics Letters, 83(26), 5377-5379.
• Chia CK, Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M, Airey RJ & Robson PN (2003) Multiplication and excess noise in AlxGa1-xAs/GaAs multilayer avalanche photodiodes. J APPL PHYS, 94(4), 2631-2637.
• Roberts JS, Green RP, Wilson LR, Zibik EA, Revin DG, Cockburn JW & Airey RJ (2003) Quantum cascade lasers grown by metalorganic vapor phase epitaxy. APPL PHYS LETT, 82(24), 4221-4223.
• Carder DA, Wilson LR, Green RP, Cockburn JW, Hopkinson M, Steer MJ, Airey R & Hill G (2003) Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser. Applied Physics Letters, 82(20), 3409-3411.
• Tan WS, Houston PA, Hill G, Airey RJ & Parbook PJ (2003) Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates. J ELECTRON MATER, 32(5), 350-354.
• Dudley SEM, Guzman JM, Quinlan T, Walker SD, Airey RJ, Hill G & Parker MC (2003) Tuneable optoelectronic bandpass filtering using a simple self-pulsating two-section laser. OPT EXPRESS, 11(2), 151-157.
• BUSHNELL D, EKINSDAUKES N, BARNHAM K, CONNOLLY J, ROBERTS J, HILL G, AIREY R & MAZZER M (2003) Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications. Solar Energy Materials and Solar Cells, 75(1-2), 299-305.
• Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M & Airey RJ (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE T ELECTRON DEV, 49(12), 2349-2351. View this article in WRRO
• Green RP, Wilson LR, Carder DA, Cockburn JW, Hopkinson M, Steer MJ, Airey RJ & Hill G (2002) Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding. ELECTRON LETT, 38(24), 1539-1541.
• Wilson LR, Carder DA, Cockburn JW, Green RP, Revin DG, Steer MJ, Hopkinson M, Hill G & Airey R (2002) Intervalley scattering in GaAs–AlAs quantum cascade lasers. Applied Physics Letters, 81(8), 1378-1380.
• Sadowski J, Mathieu R, Svedlindh P, Karlsteen M, Kanski J, Fu Y, Domagala JT, Szuszkiewicz W, Hennion B, Maude DK , Airey R et al (2002) Ferromagnetic GaMnAs/GaAs superlattices—MBE growth and magnetic properties. Thin Solid Films, 412(1-2), 122-128.
• Liu HY, Sellers IR, Airey RJ, Steer MJ, Houston PA, Mowbray DJ, Cockburn J, Skolnick MS, Xu B & Wang ZG (2002) Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. APPL PHYS LETT, 80(20), 3769-3771.
• Tan WS, Houston PA, Parbrook PJ, Hill G & Airey RJ (2002) Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors. J PHYS D APPL PHYS, 35(7), 595-598.
• Steer MJ, Carder DA, Wilson LR, Cockburn JW, Hopkinson M, Chia CK, Airey R & Hill G (2002) GaAs-based quantum cascade lasers with native oxide-defined current confinement. Electronics Letters, 38(2), 75-77.
• Ekins-Daukes NJ, Bushnell DB, Connolly JP, Barnham KWJ, Mazzer M, Roberts JS, Hill G & Airey R (2002) Strain-balanced quantum well solar cells. Physica E: Low-dimensional Systems and Nanostructures, 14(1-2), 132-135.
• Liu HY, Sellers IR, Airey RJ, Steer MJ, Houston PA, Mowbray DJ, Cockburn J, Skolnick MS, Xu B & Wang ZG (2002) Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. Applied Physics Letters, 80(20), 3769-3771.
• Wilson LR, Cockburn JW, Carder DA, Steer MJ, Hopkinson M, Chia CK, Airey R & Hill G (2001) λ = 8.3 µm GaAs/AlAs quantum cascadelasersincorporating InAs monolayers. Electronics Letters, 37(21), 1292-1293.
• Whitehead AJ, Airey R, Buttar CM, Conway J, Hill G, Ramkumar S, Scarsbrook GA, Sussmann RS & Walker S (2001) CVD diamond for medical dosimetry applications. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 460(1), 20-26.
• Buttar CM, Airey R, Conway J, Hill G, Ramkumar S, Scarsbrook G, Sussmann RS, Walker S & Whitehead A (2000) A study of radiotherapy dosimeters based on diamond grown by chemical vapour deposition. Diamond and Related Materials, 9(3-6), 965-969.
• Desrat W, Piot BA, Krämer S, Maude DK, Wasilewski ZR, Henini M & Airey R () Dispersive line shape in the vicinity of theν=1quantum Hall state: Coexistence of Knight-shifted and unshifted resistively detected NMR responses. Physical Review B, 88(24).
• Flöser M, Piot BA, Campbell CL, Maude DK, Henini M, Airey R, Wasilewski ZR, Florens S & Champel T () Classical percolation fingerprints in the high temperature regime of the quantum Hall effect. New Journal of Physics, 15(8), 083027-083027.
• Piot BA, Maude DK, Henini M, Wasilewski ZR, Gupta JA, Friedland KJ, Hey R, Ploog KH, Gennser U, Cavanna A , Mailly D et al () Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. Physical Review B, 75(15).
• Vdovin EE, Khanin YN, Makarovsky O, Dubrovskii YV, Patanè A, Eaves L, Henini M, Mellor CJ, Benedict KA & Airey R () Magnetoanisotropy of electron-correlation-enhanced tunneling through a quantum dot. Physical Review B, 75(11).
• Allison G, Spasov S, Patanè A, Eaves L, Ignatov A, Maude DK, Hopkinson M & Airey R () Magnetophonon oscillations in the negative differential conductance of dilute nitrideGaAs1−xNxsubmicron diodes. Physical Review B, 75(11).
• Desrat W, Maude DK, Wasilewski ZR, Airey R & Hill G () Dresselhaus spin-orbit coupling in a symmetric (100) GaAs quantum well. Physical Review B, 74(19).
• Piot BA, Maude DK, Henini M, Wasilewski ZR, Friedland KJ, Hey R, Ploog KH, Toropov AI, Airey R & Hill G () Quantum Hall ferromagnet at high filling factors: A magnetic-field-induced Stoner transition. Physical Review B, 72(24).
• Patanè A, Mori N, Fowler D, Eaves L, Henini M, Maude DK, Hamaguchi C & Airey R () Magnetic-Field-Induced Suppression of Electronic Conduction in a Superlattice. Physical Review Letters, 93(14).
• Karimov OZ, John GH, Harley RT, Lau WH, Flatté ME, Henini M & Airey R () High Temperature Gate Control of Quantum Well Spin Memory. Physical Review Letters, 91(24).
• Endicott J, Patanè A, Ibáñez J, Eaves L, Bissiri M, Hopkinson M, Airey R & Hill G () Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells. Physical Review Letters, 91(12).

Conference proceedings papers

• Fordos T, Clarke E, Patil P, Airey RJ, Babazadeh N, Cemlyn B, Adams M, Henning I & Heffernan J (2019) Quantum dot-based optically pumped VCSELs with high-contrast periodic gratings. 2019 24th Microoptics Conference (MOC), 17 November 2019 - 20 November 2019.
• Majid MA, Childs DTD, Kennedy K, Airey R, Hogg RA, Clarke E, Spencer P & Murray R (2013) Absorption and single-pass gain measurements in bilayer quantum dot laser structure. 2013 Saudi International Electronics, Communications and Photonics Conference, 27 April 2013 - 30 April 2013.
• Shahid H, D. Childs DT, Majid MA, Kennedy K, Airey R, Hogg RA, Clarke E, Spencer P & Murray R (2011) Integrated Amplifier for Gain Spectra Measurement of Bilayer Quantum Dot Laser Material. Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 27 September 2011 - 30 September 2011.
• Lee K-H, Barnham KWJ, Browne BC, Connolly JP, Adams JGJ, Airey RJ, Ekins-Daukes NJ, Fuhrer M, Rees V, Lumb M , Dobbin AL et al (2011) Multiple quantum well top cells for multijunction concentrator solar cells. 2011 37th IEEE Photovoltaic Specialists Conference, 19 June 2011 - 24 June 2011.
• Majid MA, Childs DTD, Kennedy K, Clarke E, Murray R, Airey R, Hogg RA & Spencer P (2011) Strain engineered bilayers for extending the operating wavelength of quantum dot lasers. IET Optoelectronics, Vol. 5(3) (pp 100-104)
• Majid MA, Chen SC, Childs DTD, Shahid H, Airey RJ, Kennedy K, Hogg RA, Clarke E, Spencer P & Murray R (2011) Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7953
• Majid MA, D. Childs DT, Shahid H, Kennedy K, Airey R, Hogg RA, Clarke E, Spencer P & Murray R (2010) Excited State Bilayer Quantum Dot Lasers at 1.3μm. Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 21 September 2010 - 24 September 2010.
• Lee KB, Parbrook PJ, Wang T, Bai J, Ranalli F, Airey RJ & Hill G (2010) The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247(7) (pp 1761-1763)
• Majid MA, Childs DTD, Chen S, Groom KM, Kennedy K, Airey R, Hogg RA, Clarke E, Spencer P & Murray R (2010) Gain spectra analysis of bilayer quantum dot lasers beyond 1.3μm. 2010 Photonics Global Conference, 14 December 2010 - 16 December 2010.
• Majid MA, Childs DTD, Kennedy K, Airey R, Hogg RA, Clarke E, Spencer P & Murray R (2010) Towards 1.55 µm GaAs based lasers using quantum dot bilayers. 22nd IEEE International Semiconductor Laser Conference, 26 September 2010 - 30 September 2010.
• Lee KB, Parbrook PJ, Wang T, Bai J, Ranalli F, Airey RJ & Hill G (2009) Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes. JOURNAL OF CRYSTAL GROWTH, Vol. 311(10) (pp 2857-2859)
• Browne B, Ioannides A, Connolly J, Barnham K, Roberts J, Airey R, Hill G, Smekens G & Van Begin J (2008) Tandem quantum well solar cells. 2008 33rd IEEE Photovoltaic Specialists Conference (pp 1-5), 11 May 2008 - 16 May 2008.
• Piot BA, Maude DK, Henini M, Wasilewski ZR, Gupta JA, Gennser U, Cavanna A, Mailly D, Airey R & Hill G (2008) Determination of the Landau level shape via the transition to the spin polarized state in the integer quantum Hall effect. Physica E: Low-dimensional Systems and Nanostructures, Vol. 40(5) (pp 1200-1201)
• Fuhrer MF, Connolly JP, Mazzer M, Ballard IM, Johnson DC, Barnham KWJ, Bessiere A, Roberts JS, Airey R, Calder C , Hill G et al (2008) Hot carriers in strain balanced quantum well solar cells. 2008 33rd IEEE Photovolatic Specialists Conference, 11 May 2008 - 16 May 2008.
• Revin DG, Zhang SY, Steer MJ, Airey RJ, Krysa AB, Hopkinson M, Wilson LR, Menzel S & Cockburn JW (2008) Short-wavelength quantum cascade lasers - art. no. 69090V. NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, Vol. 6909 (pp V9090-V9090)
• Desrat W, Maude DK, Wasilewski ZR, Airey R & Hill G (2007) Weak antilocalization in a GaAs quantum well in the presence of a strong in-plane magnetic field. AIP Conference Proceedings, Vol. 893 (pp 551-552)
• Pereira MF, Nelander R, Wacker A, Revin DG, Soulby MR, Wilson LR, Cockburn JW, Krysa AB, Roberts JS & Airey RJ (2007) Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18(7) (pp 689-694)
• Dylewicz R, Hogg RA, Fry PW, Parbrook PJ, Airey R, Tahraoui A & Patela S (2007) Inductively coupled plasma etching of GaN using SiCl₄/Cl₂/Ar for submicron‐sized features fabrication. physica status solidi c, Vol. 4(7) (pp 2634-2637)
• Piot BA, Maude DK, Friedland KJ, Hey R, Ploog KH, Wasilewski ZR, Henini M, Airey R, Hill G, Toropov AI , Gennser U et al (2007) Magnetic-field-induced Stoner transition in a quantum Hall ferromagnet at high filling factors. AIP Conference Proceedings
• Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm gainnas/gaas quantum well lasers with a quaternary-barrier structure. 2007 Conference on Lasers and Electro-Optics (CLEO), 6 May 2007 - 11 May 2007.
• Revin DG, Cockburn JW, Wilson LR, Steer MJ, Airey RJ, Hopkinson M & Krysa AB (2007) InGaAs-AlAsSb Quantum Cascade Lasers: Towards 3 mu m Emission. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 (pp 492-493)
• Revin DM, Cockburn JW, Steer MJ, Zhang S, Wilson LR, Hopkinson M & Airey RJ (2007) Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 705-706)
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• Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Offermans P, Koenraad PM & Wolter JH (2005) InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 mu m. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 248-250)
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• Bushnell DB, Barnham KWJ, Connolly JP, Mazzer M, Ekins-Daukes NJ, Roberts JS, Hill G, Airey R & Nasi L (2003) Effect of barrier composition and well number on the dark current of quantum well solar cells. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Vol. C (pp 2706-2709)
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Preprints

• Nelander R, Wacker A, Pereira MF, Revin DG, Soulby MR, Wilson LR, Cockburn JW, Krysa AB, Roberts JS & Airey RJ (2007) Fingerprints of spatial charge transfer in Quantum Cascade Lasers, arXiv.