Professor Shankar Madathil

PhD, MTech, MSc, BSc

School of Electrical and Electronic Engineering

Chair in Power Electronic Systems

Electrical Machines and Drives Research Group

Rolls-Royce/Royal Academy of Engineering Research Chair

s.madathil@sheffield.ac.uk
+44 114 222 5856

Sir Frederick Mappin Building

Full contact details

Professor Shankar Madathil
School of Electrical and Electronic Engineering
Sir Frederick Mappin Building
Mappin Street
Sheffield
S1 3JD

Profile

Prof Shankar N Ekkanath Madathil was a Royal Academy of Engineering Research Professor in Power Electronics (2007-12) and a Royal Society Industry Fellow of Rolls-Royce (2013-17).

Between 1994 and 2007, he was the Founding Director of the Emerging Technologies Research Centre at De Montfort University, which he established to undertake research in microelectronics.

Prior to that, he was elected as a Maudslay Engineering Research Fellow of Pembroke College, Cambridge.

He completed his PhD in Cambridge University through support from Cambridge Nehru scholarship and has a Master’s degree in Semiconductor Technology and a Master’s degree in Materials Science.

He has more than three decades of proven track record in the field of power semiconductor devices and associated technologies and works with key supply chain partners world-wide.

His group has already delivered world-leading innovative power semiconductor device solutions in Silicon (Si) and wide band gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC).

His notable contributions include the Clustered IGBT concept in Silicon and Silicon Carbide; the first demonstration of 3 kV Intelligent Power Chip in Silicon, record low on-state resistance 100 V devices in Silicon, world first demonstration of high density 2 Dimensional Hole Gas in GaN and most recently, ground-breaking super-junction switching technologies in GaN. As PI/Co-I, he has successfully led projects to transfer innovative power device technologies to industry.

He was an invited Fellow at the National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan in 2005 & 2007. He is a Visiting Professor and Vajra Faculty in IIT Bombay, India.

Most recently, he has been offered short-term Invitation Fellowship by Japanese Society of Promotion of Sciences to spend two months at Kyushu University in Japan.

He is an editor of IEEE – Transactions in Electron Devices, IEEE - Transactions in Devices and Materials Reliability, Proceedings of the Royal Society – Mathematical, Physical and Engineering Sciences and an associated editor of IET – Journal of Power Electronics.

He is a Fellow of IET and IOP. Presently, he is involved as a Technical Program Committee member in various IEEE and premier conferences such as IEDM and ESSDERC/ESSIRC.

Qualifications

PhD (Engineering), University of Cambridge 1992
MTech (Physical Engineering), Indian Institute of Science, Bangalore 1986
MSc (Applied Sciences), PSG College of Technology, India 1984
BSc (Applied Sciences), PSG College of Technology, India 1982

Research interests

Power semiconductor devices and technologies
High temperature power electronics
Active gate drive technologies
High power density converters
Power integrated circuits for lighting, automotive and switched mode power supplies
High voltage thin film transistors and integration aspects
Modelling of power semiconductor devices and technologies
New concepts for semiconductor devices and technologies
Power semiconductor devices and technologies for harsh environments
Wide band gap power semiconductor devices and technologies
Nano technologies for power electronic applications

Publications

Journal articles

Du Y, Sankara Narayanan EM, Kawai H, Yagi S & Narui H (2024) Current saturation behavior in GaN polarization superjunction hybrid diode. physica status solidi (a). View this article in WRRO
Sheikhan A, Madathil SNE, Kawai H, Yagi S & Narui H (2023) Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors. Japanese Journal of Applied Physics, 62.
Sheikhan A, Narayanankutty G, Narayanan EMS, Kawai H, Yagi S & Narui H (2023) Erratum: Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability [Jpn. J. Appl. Phys. 62 014501 (2023)]. Japanese Journal of Applied Physics, 62(3), 039401-039401.
Luo P, Madathil S, Nishizawa S-I & Saito W (2020) Turn-off dV/dt controllability in 1.2kV MOS-bipolar devices. IEEE Transactions on Power Electronics. View this article in WRRO
Luo P, Madathil S, Nishizawa S-I & Saito W (2020) Evaluation of dynamic avalanche performance in 1.2kV MOS-bipolar devices. IEEE Transactions on Electron Devices. View this article in WRRO
Kaminski N & Madathil S (2019) Guest editorial: selected papers from the 14th international seminar on power semiconductors (ISPS 2018). IET Journal of Power Electronics, 12(15), 3859-3860. View this article in WRRO
Luo P, Madathil SN & Long HY (2018) A Novel Approach to Suppress the Collector Induced Barrier Lowering (CIBL) Effect in Narrow Mesa IGBTs. IEEE Electron Device Letters, 39(9), 1350-1353. View this article in WRRO
Unni V, Long HY, Yan H, Nakajima A, Kawai H & Sankara Narayanan EM (2018) Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs. IET Power Electronics, 11(14), 2198-2203. View this article in WRRO
Luo P, Long HY, Sweet MR, De Souza M & Madathil SNE (2018) Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices, 65(4), 1440-1446. View this article in WRRO
(2018) Guest Editorial: Selected Papers from the 13th International Seminar on PowerSemiconductors (ISPS 2016). IET Power Electronics, 11(4), 627-628.
Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R , De Santi C et al (2018) The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics, 51(16), 163001-163001. View this article in WRRO
H Amano and Y Baines and E Beam and Matteo Borga and T Bouchet and Paul R Chalker and M Charles and Kevin J Chen and Nadim Chowdhury and Rongming Chu and Carlo De Santi and Maria Merlyne De Souza and Stefaan Decoutere and L Di Cioccio and Bernd Eckardt and Takashi Egawa and P Fay and Joseph J Freedsman and L Guido and Oliver Häberlen and Geoff Haynes and Thomas Heckel and Dilini Hemakumara and Peter Houston and Jie Hu and Mengyuan Hua and Qingyun Huang and Alex Huang and Sheng Jiang and H Kawai and Dan Kinzer and Martin Kuball and Ashwani Kumar and Kean Boon Lee and Xu Li and Denis Marcon and Martin März and R McCarthy and Gaudenzio Meneghesso and Matteo Meneghini and E Morvan and A Nakajima and E M S Narayanan and Stephen Oliver and Tomás Palacios and Daniel Piedra and M Plissonnier and R Reddy and Min Sun and Iain Thayne and A Torres and Nicola Trivellin and V Unni and Michael J Uren and Marleen Van Hove and David J Wallis and J Wang and J Xie and S Yagi and Shu Yang and C Youtsey and Ruiyang Yu and Enrico Zanoni and Stefan Zeltner and Yuhao Zhang (2018) The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics, 51(16), 163001.
Luo P, Sweet M & Ekkanath Madathil S (2017) A snap-back free Shorted Anode Super-Junction TCIGBT. IET Power Electronics. View this article in WRRO
Kawai H, Yagi S, Hirata S, Nakamura F, Saito T, Kamiyama Y, Yamamoto M, Amano H, Unni V & Narayanan EMS (2017) Low cost high voltage GaN polarization superjunction field effect transistors. Physica Status Solidi (A), 214(8). View this article in WRRO
Baltynov T, Unni V & Narayanan EMS (2016) The world’s first high voltage GaN-on-Diamond power semiconductor devices. Solid-State Electronics, 125, 111-117. View this article in WRRO
昭中, 伸一西, 弘通大, 一生筒, 洋岩, 邦之角, 整若, Vineet U & Narayanan EMS (2016) P/N混載GaNパワー集積回路技術の現状, 199-199.
Long H, Sweet M & Narayanan S (2016) Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period. Facta universitatis - series: Electronics and Energetics, 29(1), 1-10.
Zhu H, Sankara Narayanan EM & Sweet M (2015) Base drive energy recovery for a silicon bipolar junction transistors. IET Power Electronics, 8(12), 2429-2434.
Madathil SE (2015) International Seminar on Power Semiconductors 2014. IET Power Electronics, 8(12), 2307-2307.
Unni V, Kawai H & Narayanan EMS (2015) Increased static R ON in GaN-on-silicon power transistors under high-side operation with floating substrate conditions. Electronics Letters, 51(1), 108-110.
Unni V, Kawai H & Narayanan EMS (2014) Crosstalk in monolithic GaN-on-Silicon power electronic devices. Microelectronics Reliability, 54(9-10), 2242-2247.
Balakrishnan M, Sweet MR & Narayanan EMS (2013) Comparison of the thermal properties of polycrystalline diamond and aluminium nitride substrates. IECON Proceedings (Industrial Electronics Conference), 544-548.
Menon KG & Narayanan EMS (2012) Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiC. IEEE Transactions on Electron Devices.
Luther-King N, Sweet M & Narayanan EMS (2012) Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT. Ieee Transactions on Power Electronics, 27, 3072-3080.
Long HY, Sweet MR & Narayanan EMS (2012) Investigation of negative gate capacitance in MOS-gated power devices. IEEE Transactions on Electron Devices, 59(12), 3464-3469.
Balachandran A, Sweet MR, Luther-King N, Narayanan EMS, Ray S, Quaresma H & Bruce J (2012) Performance evaluation of 3.3-kV planar CIGBT in the NPT technology with RTA anode. IEEE Transactions on Electron Devices, 59(5), 1439-1444.
Menon KG, Ngwendson L, Nakajima A, Sankara Narayanan EM & Bruce GP (2012) Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC. Materials Science Forum, 717-720, 1139-1142.
Long HY, Luther-King N, Sweet MR & Narayanan EMS (2012) Numerical evaluation of the short-circuit performance of 3.3-kV CIGBT in field-stop technology. IEEE Transactions on Power Electronics, 27(5), 2673-2679.
NAKAJIMA A, SUMIDA Y, YAGI S, KAWAI H, DHYANI MH & NARAYANAN EMS (2011) GaN power devices using the polarization junction concept. 電気学会研究会資料. SPC, 半導体電力変換研究会, 2011(142), 1-6.
NAKAJIMA A, SUMIDA Y, YAGI S, KAWAI H, DHYANI MH & NARAYANAN EMS (2011) GaN power devices using the polarization junction concept. 電気学会研究会資料. EDD, 電子デバイス研究会, 2011(50), 1-6.
Menon KG, Nakajima A, Ngwendson L & Narayanan EMS (2011) Performance Evaluation of 10-kV SiC Trench Clustered IGBT. IEEE ELECTR DEVICE L, 32(9), 1272-1274.
Nakajima A, Sumida Y, Dhyani MH, Kawai H & Narayanan EM (2011) GaN-based super heterojunction field effect transistors using the polarization junction concept. IEEE Electron Device Letters, 32(4), 542-544.
Luther-King N, Sankara Narayanan EM, Coulbeck L, Crane A & Dudley R (2010) Comparison of Trench gate IGBT and CIGBT devices for 3.3kV high power module applications. SPEEDAM 2010 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion, 545-550.
Nakajima A, Sumida Y, Dhyani MH, Kawai H & Narayanan EMS (2010) High density two-dimensional hole gas induced by negative polarization at GaN/AlGaN heterointerface. Applied Physics Express, 3(12).
Luther-King N, Narayanan EMS, Coulbeck L, Crane A & Dudley R (2010) Comparison of trench gate IGBT and CIGBT devices for increasing the power density from high power modules. IEEE Transactions on Power Electronics, 25(3), 583-591.
Long H, Sweet MR, Ngwendson LK & Narayanan EMS (2010) Current distribution analysis of insulated gate bipolar transistor cells. Japanese Journal of Applied Physics, 49(4 PART 2).
Vershinin K, Moens P, Bauwens F, Narayanan EMS & Tack M (2009) A new method to improve tradeoff performance for advanced power MOSFETs. IEEE Electron Device Letters, 30(4), 416-418.
Kong ST, Ngwendson LK, Sweet M, Kumar D & Sankara Narayanan EM (2009) Turn-off behavior of 1.2 kV/25 A NPT-CIGBT under clamped inductive load switching. IEEE Transactions on Power Electronics, 24(4), 1100-1106.
Nicholls JC, Sweet MR, Vershinin KV & Narayanan EMS (2007) Zero-current soft-switching performance of 1200-V PT clustered insulated gate bipolar transistor. IEEE Transactions on Power Electronics, 22(4), 1177-1185.
Green DW, Vershinin KV, Sweet M & Narayanan EMS (2007) Anode engineering for the insulated gate bipolar transistor - A comparative review. IEEE Transactions on Power Electronics, 22(5), 1857-1866.
Hardikar S, Nicholls J, Green DW, Sweet M & Sankara Narayanan EM (2006) Influence of layout design on the performance of LIGBT. IEE Proceedings: Circuits, Devices and Systems, 153(1), 67-72.
Green DW & Sankara Narayanan EM (2006) Fully isolated high side and low side LIGBTs in junction isolation technology. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2006.
Hardikar S, Green DW & Narayanan EMS (2006) Transient substrate currents in junction-isolated lateral IGBT. IEEE Transactions on Electron Devices, 53(6), 1487-1490.
Tadikonda R, Hardikar S, Green DW, Sweet M & Narayanan EMS (2006) Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology. IEEE Transactions on Electron Devices, 53(7), 1740-1744.
Cross RBM, De Souza MM & Sankara Narayanan EM (2005) A low temperature combination method for the production of ZnO nanowires. Nanotechnology, 16(10), 2188-2192.
Luther-King N, Sweet M, Spulber O, Vershinin KV, De Souza MM & Narayanan EMS (2005) MOS control device concepts for AC-AC matrix converter applications: The HCD concept for high-efficiency anode-gated devices. IEEE Transactions on Electron Devices, 52(9), 2075-2080.
Green DW, Hardikar S, Tadikonda R, Sweet M, Vershinin KV & Narayanan EMS (2005) Design and analysis of multichannel LIGBTs in junction isolation technology. IEEE Transactions on Electron Devices, 52(7), 1672-1676.
Green DW, Sweet M, Vershinin KV, Hardikar S & Narayanan EMS (2005) Performance analysis of the segment npn anode LIGBT. IEEE Transactions on Electron Devices, 52(11), 2482-2488.
Moguilnaia NA, Vershinin KV, Sweet MR, Spulber OI, De Souza MM & Narayanan EMS (2005) Innovation in power semiconductor industry: Past and future. IEEE Transactions on Engineering Management, 52(4), 429-439.
Cross RBM, Oxley DP, Manhas M & Sankara Narayanan EM (2004) Low temperature a-Si:H TFTs with a SiO2 gate insulator deposited by liquid phase deposition. Materials Research Society Symposium Proceedings, 808, 697-702.
Benda V & Narayanan EMS (2004) Advances in power semiconductor devices.. Microelectron. J., 35, 223-223.
Hardikar S, De Souza MM, Xu YZ, Pease TJ & Sankara Narayanan EM (2004) A novel double RESURF LDMOS for HVIC's. Microelectronics Journal, 35(3), 305-310.
Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM, Sankara-Narayanan EM, Flores D & Millan J (2004) 1.7 kV NPTV-groove clustered IGBT. IEE Proceedings: Circuits, Devices and Systems, 151(3), 265-268.
Sankara Narayanan EM, Spulber O, Sweet M, Bose JVSC, Verchinine K, Luther-King N, Moguilnaia N & De Souza MM (2004) Progress in MOS-controlled bipolar devices and edge termination technologies. Microelectronics Journal, 35(3), 235-248.
Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2004) Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEE Proceedings: Circuits, Devices and Systems, 151(3), 203-206.
Tadikonda R, Hardikar S & Narayanan EMS (2004) Realizing high breakdown voltages (>600 V) in partial SOI technology. Solid-State Electronics, 48(9), 1655-1660.
Cao G, Manhas SK, Narayanan EMS, De Souza MM & Hinchley D (2004) Comparative study of drift region designs in RF LDMOSFETs. IEEE Transactions on Electron Devices, 51(8), 1296-1303.
Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2004) Analysis and optimisation of the trench gated emitter switched thyristor. Solid-State Electronics, 48(12), 2207-2211.
Hardikar S, Tadikonda R, Green DW, Vershinin KV & Narayanan EMS (2004) Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping. IEEE Transactions on Electron Devices, 51(12), 2223-2228.
Coconete DE, Moguilnaia NA, Cross RBM, De Souza PE & Sankara Narayanan EM (2003) Creativity - A Catalyst for Technological Innovation. IEEE International Engineering Management Conference, 291-295.
Hardikar S, Tadikonda R, Sweet M, Vershinin K & Narayanan EMS (2003) A Fast Switching Segmented Anode NPN Controlled LIGBT. IEEE Electron Device Letters, 24(11), 701-703.
Luo J, Cao G, Ekkanath Madathil SN & De Souza MM (2003) A high performance RF LDMOSFET in thin film SOI technology with step drift profile. Solid-State Electronics, 47(11), 1937-1941.
Chichkine MP, De Souza MM & Sankara Narayanan EM (2002) Growth of precursors in silicon using pseudopotential calculations.. Phys Rev Lett, 88(8), 085501.
Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Sankara Narayanan EM (2002) Striped anode engineering: A concept for fast switching power devices. Solid-State Electronics, 46(6), 903-909.
Roig J, Vellvehi M, Flores D, Rebollo J, Millan J, Krishnan S, De Souza MM & Sankara Narayanan EM (2002) Analysis of the breakdown voltage in SOI and SOS technologies. Solid-State Electronics, 46(2), 255-261.
Xu YZ, Cross R, Manhas M, Clough FJ, Desouza MM, Narayanan EMS, Flores D, Rebello J, Vellvehi M & Millan J (2002) High voltage polycrystalline thin-film transistor with variable doping slots in the offset region. Applied Physics Letters, 80(12), 2192-2194.
Udrea F, Udugampola UNK, Sheng K, McMahon RA, Amaratunga GAJ, Narayanan EMS, De Souza MM & Hardikar S (2002) Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET). IEEE Electron Device Letters, 23(12), 725-727.
Luther-King N, Sweet M, Spulber O, Vershinin K, Ngw CK, Bose SC, De Souza MM & Sankara Narayanan EM (2001) The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology. Solid-State Electronics, 45(1), 71-77.
Souza MMD, Wang J, Manhas SK, Narayanan EMS & Oates AS (2001) A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.. Microelectron. Reliab., 41, 169-177.
Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2001) A segmented anode, npn controlled lateral insulated gate bipolar transistor. Solid-State Electronics, 45(7), 1055-1058.
Hardikar S, Xu YZ, Cao GJ, De Souza MM & Sankara Narayanan EM (2001) Investigation into the mechanisms limiting the safe operating area of a LIGBT in DI and DELDI technologies. Microelectronics Journal, 32(2), 121-126.
Ngw CK, Sweet M, Subhas Chandra Bose JV, Spulber O, Luther King N, Vershinin K, De Souza MM & Sankara Narayanan EM (2001) Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices. Solid-State Electronics, 45(1), 127-132.
De Souza MM, Chichkine MP & Sankara Narayanan EM (2001) A study of fully coordinated precursors in silicon using the Ackland potential. Physica B: Condensed Matter, 304(1-4), 483-488.
Sweet M, Ngw CK, Spulber O, Ngwendson JVL, Vershinin KV, Bose SC, De Souza MM & Narayanan EMS (2001) Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip. Microelectronics Journal, 32(5-6), 527-536.
Bose JVSC, De Souza MM, Narayanan EMS, Ensell G, Pease TJ & Humphery J (2001) A novel metal field plate edge termination for power devices. Microelectronics Journal, 32(4), 323-326.
Krishnan S, De Souza MM, Narayanan EMS, Vellvehi M, Roig J, Flores D, Rebollo J & Millan J (2001) Radial confinement in lateral power devices. Microelectronics Journal, 32(5-6), 481-484.
Spulber O, Sweet M, Vershinin K, Ngw CK, Ngwendson L, Bose JVSC, De Souza MM & Narayanan EMS (2000) A novel trench clustered insulated gate bipolar transistor (TCIGBT). IEEE ELECTR DEVICE L, 21(12), 613-615.
De Souza MM, Subhas Chandra Bose JV, Sankara Narayanan EM, Pease TJ, Ensell G & Humphreys J (2000) A novel area efficient floating field limiting ring edge termination technique. Solid-State Electronics, 44(8), 1381-1386.
Qin Z, Sankara Narayanan EM & De Souza MM (2000) The Kirk effect in the DELDI technology. Microelectronics Journal, 31(3), 175-185.
Krishnan S, De Souza MM, Sankara Narayanan EM, Vellvehi M, Flores D, Rebollo J & Millan J (2000) Radial confinement: Concept for lateral power devices. Electronics Letters, 36(14), 1242-1244.
Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2000) 1200 V fully implanted JI technology. Electronics Letters, 36(18), 1587-1589.
Cao GJ, De Souza MM & Narayanan EMS (2000) Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications. Solid-State Electronics, 44(10), 1869-1873.
Hardikar S, Cao G, Xu Y, De Souza MM & Narayanan EMS (2000) Local charge control technique to improve the forward bias safe operating area of LIGBT. Solid-State Electronics, 44(7), 1213-1218.
Pease TJ, Ekkanath-Madathil SN & Bayliss SC (2000) Luminescent chemically-etched porous polycrystalline silicon on insulating substrates. Journal of Electronic Materials, 29(8), 1033-1037.
Qin Z & Sankara Narayanan EM (1999) A novel multi-cell lateral insulated gate bipolar transistor in the DELDI technology. International Journal of Electronics, 86(10), 1169-1178.
Qin Z, Narayanan EMS & De Souza MM (1999) A lateral MOS-controlled thyristor-enhanced insulated gate bipolar transistor. Solid-State Electronics, 43(10), 1845-1853.
De Souza MM, Ngw CK, Shishkin M & Narayanan EMS (1999) Planar self-interstitial in silicon. Physical Review Letters, 83(9), 1799-1801.
Spulber O, Sankara Narayanan EM, Hardikar S, De Souza MM, Sweet M & Subhas Chandra Bose JV (1999) Novel gate geometry for the IGBT: The trench planar insulated gate bipolar transistor (TPIGBT). IEEE Electron Device Letters, 20(11), 580-582.
Xu YZ, Clough FJ, Narayanan EMS, Chen Y & Milne WI (1999) Turn-On Characteristics of Polycrystalline Silicon TFT's - Impact of Hydrogenation and Channel Length. IEEE Electron Device Letters, 20(2), 80-82.
Xu YZ, Hardikar S, De Souza MM, Cao GJ & Narayanan EMS (1999) Design of novel high side power MOSFET based on HVIC process. Electronics Letters, 35(21), 1880-1881.
De Souza MM & Sankara Narayanan EM (1998) Self-diffusion in silicon. Defect and Diffusion Forum, 153-155, 69-80.
Clough FJ, Sankara Narayanan EM, Chen Y, Eccleston W & Milne WI (1997) Polycrystalline silicon thin film transistor incorporating a semi-insulating field plate for high voltage circuitry on glass. Applied Physics Letters, 71(14), 2002-2004.
Ekkanath-Madathil SN, De Souza MM & Qin Z (1997) Novel lateral MOS controlled power devices and technologies for high voltage integrated circuits. Solid State Phenomena, 55, 51-53.
De Souza MM & Sankara Narayanan EM (1996) Double resurf technology for HVICs. Electronics Letters, 32(12), 1092-1093.
Qin Z & Sankara Narayanan EM (1995) npn controlled lateral insulated gate bipolar transistor. Electronics Letters, 31(23), 2045-2047.
Clough FJ, Brown AO, Madathil SNE & Milne WI (1995) Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications. Thin Solid Films, 270(1-2), 517-521.
Clough FJ, Brown AO, Ekkanath Madathil SN & Milne WI (1995) Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications. Microelectronic Engineering, 28(1-4), 451-454.
Chen W, Amaratunga GAJ, Narayanan EMS, Humphrey J & Evans AGR (1994) A CMOS compatible lateral emitter switched thyristor with enhanced turn-on capability. IEEE Electron Device Letters, 15(11), 482-484.
Sankara Narayanan EM, Amaratunga GAJ & Milne WI (1993) CMOS compatible shorted anode auxiliary cathode lateral insulated gate bipolar transistors. IEEE Transactions on Electron Devices, 40(10), 1880-1883.
Huang Q, Amaratunga GAJ, Humphrey J, Narayanan EMS, Milne WI & Starbuck CM (1992) Monolithic integration of 5 V CMOS and high-voltage devices. IEEE Electron Device Letters, 13(11), 575-577.
Narayanan EMS, Amaratunga GAJ, Milne WI, Humphrey JI & Huang Q (1991) Analysis of CMOS-compatible lateral insulated base transistors. IEEE Transactions on Electron Devices, 38(7), 1624-1632.
Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1991) Analysis of n-channel MOS-controlled thyristors. IEEE Transactions on Electron Devices, 38(7), 1612-1618.
Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1991) Simulation of reverse breakdown in planar P-N junctions. Solid State Electronics, 34(9), 983-993.
Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1990) Static CMOS latch-up considerations in HVIC design. IEEE Journal of Solid-State Circuits, 25(2), 613-616.
Sheikhan A & Narayanan EMS () Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET. Micromachines, 15(11), 1337-1337.
Du Y, Narayanan EMS, Kawai H, Yagi S & Narui H () Effect of SiO₂ Surface Passivation on Performance of GaN Polarization Superjunction (PSJ) HFETs. physica status solidi (a).
Madathil S () Analysis of 1.2kV GaN polarisation superjunction diode surge current capability. Japanese Journal of Applied Physics.
Madathil S () Investigation on Shift in Threshold Voltages of 1.2kV GaN Polarization Superjunction (PSJ) HFETs. IEEE Transactions on Electron Devices.
Zuxin Qin & Sankara Narayanan EM () A novel double p-well lateral emitter switched thyristor. 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299).
Madathil S & Luo P () Theoretical Analysis of On-state Performance Limit of 4H-SiC IGBT in Field-Stop Technology. IEEE Transactions on Electron Devices.
Madathil S & Wang Z () Design of a Snubber Circuit for Low Voltage DC Solid-State Circuit Breakers. IET Power Electronics.
Madathil S & Luo P () 3-D Scaling Rules for High Voltage Planar Clustered IGBTs. IEEE Transactions on Electron Devices.
Tan Q & Madathil S () Evaluation of Gate Drive Circuit Effect in Cascode GaNFET-based Application. Bulletin of the Polish Academy of Sciences : Technical Sciences.
Tan Q, Madathil S & Narayanankutty G () An Ultra-fast Protection Scheme for Normally-on Wide Bandgap Devices. IET Power Electronics.
Madathil S, Yan H, Luo P, DU Y & Tan X () Analytical Modeling of Sheet Carrier Density and ON-Resistance in Polarization Super-Junction HFETs. IEEE Transactions on Electron Devices.
Madathil S & Luo P () Investigation of Turn-on Performance in 1.2-kV MOS-Bipolar Devices. Japanese Journal of Applied Physics.

Conference proceedings papers

Sheikhan A, Narayanan EMS, Kawai H, Yagi S & Narui H (2024) Evaluation of a 3 kV Polarization Superjunction GaN HEMT. PCIM Europe Conference Proceedings, Vol. 2024-June (pp 549-556)
Sheikhan A & Sankara Narayanan EM (2024) Evaluation of a Hybrid Power Switch Based on Trench Clustered IGBT and SiC MOSFET. PCIM Europe Conference Proceedings, Vol. 2024-June (pp 2601-2606)
Narayanan EMS (2023) Impact of Super Junction Concepts in Silicon and Wide Bandgap Semiconductors. ISPS'23 Proceedings
Tan X & Narayanan EMS (2023) Compact GaN-based Bidirectional Polarization Super Junction HFETs with Schottky Gate on Sapphire. ISPS'23 Proceedings
Sheikhan A & Narayanan EMS (2023) Evaluation of Characteristics and Turn-off dV/dt Controllability of 1.2 kV SiC Si Hybrid Power Switch. ISPS'23 Proceedings
Wang Z & Sankara Narayanan EM (2021) Development of Current Limiting Ultra-Fast Solid-State Circuit Breakers. IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, 13 October 2021 - 16 October 2021.
Madathil SNE, Luo P, Saito W & Nishizawa S (2021) Performance Comparison of Scaled IGBTs and CIGBTs. Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials, 6 September 2021 - 9 September 2021.
Luo P, Madathil SNE & de Souza P (2021) Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology. Proceedings of 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) (pp 1319-1324). Singapore, Singapore, 24 May 2021 - 27 May 2021.
Tan Q & Madathil S (2021) A simple approach to improve the switching performance of cascode GaNFETs. 2020 8th International Conference on Power Electronics Systems and Applications (PESA). Hong Kong, China, 7 December 2020 - 7 December 2020. View this article in WRRO
Yan H & Narayanan EMS (2021) Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications (pp 113-115)
(2020) 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13 September 2020 - 18 September 2020.
Luo P, Madathil SNE, Nishizawa S-I & Saito W (2020) Dynamic avalanche free super junction-TCIGBT for high power density operation. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vienne, Austria, 13 September 2020 - 18 September 2020.
Luo P, Madathil S, Nishizawa S-I & Wataru S (2020) High dV/dt controllability of 1.2kV Si-TCIGBT for high flexibility design with ultra-low loss operation. Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 686-689). New Orleans, LA, USA, 15 March 2020 - 19 March 2020. View this article in WRRO
Luo P, Madathil SNE, Nishizawa S-I & Saito W (2020) Dynamic avalanche free design in 1.2kV Si-IGBTs for ultra high current density operation. Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA, 9 December 2019 - 11 December 2019. View this article in WRRO
Luo P, Ekkanath Madathil SN, Nishizawa SI & Saito W (2020) High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Proceedings (pp 176-180)
Alwash M, Sweet M & Narayanan EMS (2017) Analysis of voltage source converters under DC line-to-line short-circuit fault conditions. 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), 19 June 2017 - 21 June 2017. View this article in WRRO
Alwash M, Sweet M & Narayanan EMS (2017) Analysis of voltage source converters under DC line-to-line short-circuit fault conditions. 2017 IEEE International Electric Machines and Drives Conference (IEMDC), 21 May 2017 - 24 May 2017.
Luo P, Long HY, Sweet MR, De Souza MM & Narayanan EMS (2017) Analysis of a clustered IGBT and silicon carbide MOSFET hybrid switch. 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), 19 June 2017 - 21 June 2017. View this article in WRRO
Long HY, Sweet MR, Narayanan EMS, Li G & IEEE (2017) Reliability Study and Modelling of IGBT Press-Pack Power Modules. 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) (pp 2711-2717) View this article in WRRO
Unni V & Narayanan EMS (2017) Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis. Japanese Journal of Applied Physics, Vol. 56(4S), 26 September 2016 - 29 September 2016. View this article in WRRO
Sweet MR, Narayanan EMS, Menon K & IEEE (2016) Impact of Poly-Crystalline Diamond within Power Semiconductor Device Modules in a Converter. 2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) View this article in WRRO
Alwash M, Sweet M, Madathil E, Narayanan S & Bruce G (2016) Short-circuit protection of power converters with SiC current limiters. 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 18 September 2016 - 22 September 2016.
Sweet M, Sankara Narayanan EM & Steinhoff S (2016) Influence of Cassette Design upon Breakdown Performance of a 4.5kV Press-pack IGBT Module. 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) Next generation 1200V trench CIGBT for high voltage applications. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 10 May 2015 - 14 May 2015.
Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship. 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 15 March 2015 - 19 March 2015.
Baltynov T, Unni V & Narayanan EMS (2015) The world's first high voltage GaN-on-diamond power devices. 2015 45th European Solid State Device Research Conference (ESSDERC), 14 September 2015 - 18 September 2015.
Narayanan EMS & Amaratunga G (2014) A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid-State Device Research Conference (pp 521-524)
Balakrishnan M, Sweet MR & Narayanan EMS (2014) Thermal cycling reliability of polycrystalline diamond and aluminium nitride substrates. 2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion, 18 June 2014 - 20 June 2014.
Unni V, Long H, Sweet M, Balachandran A, Narayanan EMS, Nakajima A & Kawai H (2014) 2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 15 June 2014 - 19 June 2014.
Balachandran A, Sweet M, Ngwendson L, Sankara Narayanan EM, Ray S, Quaresma H & Bruce J (2012) Enhanced short-circuit performance of 3.3kV clustered insulated gate bipolar transistor (CIGBT) in NPT technology with RTA anode. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 169-172)
Nakajima A, Unni V, Menon KG, Dhyani MH, Sankara Narayanan EM, Sumida Y & Kawai H (2012) GaN-based bidirectional super HFETs using polarization junction concept on insulator substrate. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 265-268)
Luther-King N, Sweet M, Narayanan EMS & IEEE (2011) Evaluation of 1.2kV Super Junction Trench-Gate Clustered Insulated Gate Bipolar Transistor (SJ-TCIGBT). 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 92-95)
Nakajima A, Dhyani MH, Narayanan EMS, Sumida Y, Kawai H & IEEE (2011) GaN Based Super HFETs over 700V Using the Polarization Junction Concept. 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 280-283)
Dhyani MH, Green D, Sweet M, Narayanan EMS, Deane SC & Young ND (2009) Novel, 100V, trench super junction high voltage TFTs using low temperature poly crystalline silicon. Technical Digest - International Electron Devices Meeting, IEDM
Luther-King N, Sweet M & Sankara Narayanan EM (2009) Performance of a trench PMOS gated, planar, 1.2 kV clustered insulated gate bipolar transistor in NPT technology. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 164-167)
Sweet M, Narayanan EMS, Vershinin K, Yip LJ, Moens P & Desoete B (2009) Experimental demonstration of a vertical LOCOS insulated base transistor. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 235-238)
Ngwendson L, Sweet MR & Narayanan EMS (2009) An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp 198-205)
Moens P, Bauwens F, Desoete B, Baele J, Vershinin K, Ziad H, Narayanan EMS & Tack M (2008) ISPSD `07 Best Paper Award; Record-Low On-Resistance for 0.35 ¿m based Integrated XTREMOS¿ Transistors. 2008 20th International Symposium on Power Semiconductor Devices and IC's, 18 May 2008 - 22 May 2008.
Sweet M, Luther-King N, Kong ST, Sankara Narayanan EM, Bruce J & Ray S (2008) Experimental demonstration of 3.3kV planar CIGBT in NPT technology. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 48-51)
Kong ST, Ngwendson L, Sweet M & Narayanan EMS (2008) An Analysis on Turn-off Behaviour of 1.2kV NPT-CIGBT under Clamped Inductive Load Switching. 2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5 (pp 43-47)
Kong ST, Ngwendson L, Sweet M & Sankara Narayanan EM (2008) A study of the influence of technology on the negative gate capacitance in 1.2kV IGBTs. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 177-180)
Moens P, Bauwens F, Desoete B, Baele J, Vershinin K, Ziad H, Shankara Narayanan EM & Tack M (2007) Record-low on-Resistance for 035 um based integrated XtreMOS^TM Transistors. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 57-60)
Narayanan EMS, Ramakrishna T & Green DW (2007) RESURFed quasi lateral IGBT structure for high current PICs. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 245-248)
Kumar D, Sweet M, Vershinin K, Ngwendson L & Narayanan EMS (2007) RC-TCIGBT: A reverse conducting trench clustered IGBT. PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (pp 161-164)
Moens P, Bauwens F, Baele J, Vershinin K, De Backer E, Narayanan EMS & Tack M (2006) XtreMOS™: The first integrated power transistor breaking the silicon limit. Technical Digest - International Electron Devices Meeting, IEDM
Vershinin K, Sweet M, Ngwendson L & Narayanan EMS (2006) Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology. 2006 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION, VOLS 1-3 (pp 275-278)
Vershinin K, Sweet M, Ngwendson L, Thomson J, Waind P, Bruce J & Narayanan EMS (2006) Experimental demonstration of a 1.2kV trench clustered insulated gate bipolar transistor in non punch through technology. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 185-188)
Green DW, Hardikar S, Sweet M, Vershinin KV & Narayanan EMS (2005) Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching. Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp 119-122)
Sweet MR, Nicholls J, Vershinin KV, Spulber O, Ngwendson L & Narayanan EMS (2005) Zero voltage switching of a 1200V PT clustered insulated gate bipolar transistor. PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 263-266)
Green , Hardikar , Sweet , Vershinin , Tadikonda , De Souza & Narayanan (2004) Influence of temperature and doping parameters on the performance of segmented anode NPN (SA-NPN) LIGBT. Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 27 May 2004 - 27 May 2004.
Tadikonda R, Hardikar S & Narayanan EMS (2004) Potential of high-k dielectrics for lateral power and high voltage devices. Proceedings of the International Conference on Microelectronics, Vol. 24 I (pp 129-132)
Vershinin K, Sweet M, Spulber O, Hardikar S, Luther-King N, De Souza MM, Sverdloff S, Narayanan EMS & Hinchley D (2004) Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT). IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 269-272)
Cao G, Narayanan EMS, De Souza MM, Flores D, Vellvehi M, Hidalgo S, Millan J & Hinchley D (2004) Design of an RF LDMOSFET with deep drift and hot carrier immunity using time domain approach. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vol. 16 (pp 241-244)
Coconete DE, Moguilnaia NA & Narayanan EMS (2004) Technology strategy - A powerful instrument to generate and sustain competitive advantage in power microelectronics. IEEE International Engineering Management Conference, Vol. 1 (pp 358-362)
Spulber O, Sweet M, Vershinin K, Luther-King N, Sankara-Narayanan EM, De Souza MM, Flores D & Millan J (2003) 1.7kV NPT V-groove clustered IGBT - Fabrication and experimental demonstration. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 345-348)
Moguilnaia N, Coconete D & Sankara Narayanan EM (2003) Human Aspect of Rapid Product Commercialization in Power Microelectronics. IEEE International Engineering Management Conference (pp 247-251)
Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Narayanan EMS (2003) Anode-gated MOS controlled thyristor with ultra-fast switching capability. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 299-302)
Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2003) Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 216-219)
Manhas M, Pease TJ, Cross R, Bose SC, Oxley DP, De Souza MM & Sankara Narayanan EM (2002) Device quality SiO2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium - Proceedings, Vol. 716 (pp 317-323)
De Souza MM, Cao G, Sankara Narayanan EM, Youming F, Manhas SK, Luo J & Moguilnaia N (2002) Progress in silicon RF Power MOS technologies-current and future trends. ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems
Luo J, Cao G, Spulber O, Hardikar S, Feng YM, Narayanan EMS & De Souza MM (2002) Influence of physical parameters on the quasi-saturation of a power SOI RF LDMOS. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp 314-318)
Hardikar S, De Souza MM & Sankara Narayanan EM (2002) Advances in devices and technologies for power and high voltage integrated circuits. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4746 I (pp 422-431)
Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Sankara-Narayanan EM (2002) Overview of trench gated MOS-Controlled bipolar semiconductor power devices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4746 I (pp 444-449)
Udugampola UNK, Khoo GFW, Sheng K, McMahon RA, Udrea F, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2002) Characterisation of dual gate lateral inversion layer emitter transistor. IEE Conference Publication(487) (pp 557-561)
Moguilnaia NA, Vershinin KV, Sweet MR, Hardikar S, Ngwendson LK, Spulber O, Rouse MJ, De Souza MM & Narayanan EMS (2002) The investigation into the recent mergers and acquisitions in power semiconductor industry. IEEE International Engineering Management Conference, Vol. 2 (pp 826-830)
Spulber O, De Souza MM, Sweet M, Subhas Chandra Bose JV & Sankara Narayanan EM (2001) Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor. IEE Proceedings - Circuits, Devices and Systems, Vol. 148(2) (pp 79-79)
Sweet M, Spulber O, Bose JVSC, Ngwendson L, Vershinin KV, De Souza MM & Narayanan EMS (2001) Clustered insulated gate bipolar transistor: a new power semiconductor device. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 75-78)
Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2001) A novel, 1.2 kV trench clustered IGBT with ultra high performance. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 323-326)
Narayanan EMS, Sweet M, Spulber O, De Souza MM & Bose SC (2000) Clustered IGBT - a new power semiconductor device. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3975
Bose JVSC, De Souza MM, Sweet M, Spulber O & Narayanan EMS (2000) Novel area efficient edge termination technique for planar, MOS controlled power devices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3975
Krishnan S, De Souza MM, Sankara Narayanan EM, Vellvehí M, Flores D, Rebollo J & Millán J (2000) The radial confinement: A new approach to high voltage lateral power devices. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 349-352)
Sankara Narayanan EM, Sweet MR, Luther-King N, Vershinin K, Spulber O, De Souza MM & Subhas Chandra Bose JV (2000) A novel, clustered insulated gate bipolar transistor for high power applications. Proceedings of the International Semiconductor Conference, CAS, Vol. 1 (pp 173-181)
De Souza MM, Chichkine MP & Narayanan EMS (2000) Self-interstitial clusters in silicon. Materials Research Society Symposium - Proceedings, Vol. 610
Cao GJ, De Souza MM & Narayanan EMS (2000) Resurfed lateral bipolar transistors for high-voltage, High-frequency applications. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp 185-187)
Xu YZ, Clough FJ, Narayanan EMS & Cross R (2000) Floating body induced transient characteristics in polycrystalline silicon TFTs. Materials Research Society Symposium - Proceedings, Vol. 609
Spulber O, Sweet M, Vershinin K, Ngw Y, Ngwendson L, Bose SCJV, De Souza MM & Narayanan EMS (2000) Influence of the N plus floating emitter on the on-state characteristics of the trench EST. 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS (pp 329-332)
Spulber O, Narayanan EMS, De Souza MM, Sweet M, Hardikar S & Subhas Chandra Bose JV (1999) The trench planar insulated gate bipolar transistor (TPIGBT). IEE Colloquium (Digest)(104) (pp 75-79)
Clough FJ, Xu YZ, Narayanan EMS & Cross R (1999) Structure sensitive hydrogenation effects in polysilicon high voltage thin film transistors. Materials Research Society Symposium - Proceedings, Vol. 557 (pp 635-640)
Aschenbeck J, Chen Y, Clough F, Xu YZ, Sankara Narayanan EM & Milne WI (1998) Stepped Gate Polysilicon Thin-Film Transistor for Large Area Power Applications. MRS Proceedings, Vol. 508
Aschenbeck J, Chen Y, Clough F, Xu YZ, Narayanan EMS & Milne WI (1998) Stepped Gate Polysilicon Thin Film Transistor for Large Area Power Applications. MRS Proceedings, Vol. 507
Chen Y, Clough FJ, Sankara Narayanan EM, Xu YZ, Eccleston W & Milne WI (1997) The Impact of Field Plate Resistivity on the Performance of a Novel High Voltage Thin Film Transistor Incorporating a Semi-Insulating Layer. MRS Proceedings, Vol. 467
Clough FJ, Chen Y, Brown AO, Sankara Narayanan EM & Milne WI (1995) Semi-insulating layer for novel high voltage polysilicon thin film transistors. Materials Research Society Symposium - Proceedings, Vol. 377 (pp 731-736)
Narayanan EMS, Clough FJ & Milne WI (1995) Investigation of novel high voltage polysilicon thin film transistors (pp 605-608)
Narayanan EMS & Amaratunga G (1995) A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid-State Device Research Conference (pp 521-524)
Chen Y, Ekkanath Madathil SN, Clough FJ & Milne WI (1995) Influence of lattice temperature on SOI MOSFET's output characteristics. IEE Colloquium (Digest)(64)
Long H, Sweet M, De Souza MM & Madathil () A New Generation of Clustered IGBT with High Ruggedness. PCIM. Shanghai, 25 June 2015 - 25 June 2015.
Vershinin K, Sweet M, Ngwendson L, Thomson J, Waind P, Bruce J & Sankara Narayanan EM () Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology. 2006 IEEE International Symposium on Power Semiconductor Devices & IC's
Green DW & Sankara Narayanan EM () Fully Isolated High Side and Low Side LIGBTs in Junction Isolation Technology. 2006 IEEE International Symposium on Power Semiconductor Devices & IC's
D. W. Green SH () Interaction between monolithically integrated JI-LIGBTs under Clamped Inductive Switching. Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.
Sheng K, Udugampola UNK, Khoo GFW, Udrea F, Amaratunga GAJ, McMahon RA, Narayanan EMS, De Souza MM & Hardikar S () Dual gate lateral inversion layer emitter transistor. Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
Mugnier M, Manhas SK, Chandra Sekhar D, Krishnan S, Cross R, Sankara Narayanan EM, De Souza MM, Flores D, Vellvehi M & Millan J () Degradation behaviour of polysilicon high voltage thin film transistors. Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)
Krishnan S, Sankara Narayanan EM, Xu YZ, Clough FJ, De Souza MM, Flores D, Vellvehi M & Millan J () Novel dual gate high voltage TFT with variable doping slot. 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)
Sankara Narayanan EM, Moguilnaia N, Vershinin K, Sweet M, Hardikar S, Ngwendson L, Spulber O & De Souza MM () Innovation and competition: are they crucial in power semiconductor industry? A market perspective. 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)
Sweet M, Spulber O, Ngwendson L, Vershinin KV, De Souza MM & Sankara Narayanan EM () The accumulation enhanced emitter switched thyristor - a novel area efficient power semiconductor device. 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)
De Souza MM, Spulber O & Sankara Narayanan EM () A novel 'cool' insulated base transistor. 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
Manhas SK, de Souza MM, Gates AS, Chetlur SC & Sankara Narayanan EM () Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs. 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)
Hardikar S, Sankara Narayanan EM, De Souza MM, Huang AQ & Amaratunga G () A novel dual gated lateral MOS-bipolar power device. 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
Cao G, De Souza MM & Narayanan EMS () A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region. CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
Spuiber O, De Souza MM, Narayanan EMS & Krishnan S () Analyses of a COOL-MOSFET. CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
Bose JVSC, De Souza MM, Narayanan EMS, Spulber O & Sweet M () Influence of a shallow p+ offset region on a novel edge termination technique using lightly doped p-rings. CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
Spulber O, Narayanan EMS, De Souza MM, Sweet M, Bose JVSC & Hardikar JV () The trench planar insulated gate bipolar transistor (TPIGBT). CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
Xu YZ, Clough FJ, Narayanan EMS, Chen Y & Milne WI () A conductivity modulated high voltage polycrystalline silicon thin film transistor with improved on state and transient performance. International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
Sankara Narayanan EM, Qin Z, De Souza MM & Amaratunga G () A new lateral insulated base emitter switched thyristor. Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)
Clough FJ, Chen Y, Narayanan EMS, Eccleston W & Milne WI () A novel thin film transistor for high voltage circuitry on glass. Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
Zuxin Qin & Narayanan EMS () A novel multi-channel approach to improve LIGBT performance. Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
Zuxin Qin & Narayanan EMS () A novel multi-cell lateral insulated gate bipolar transistor in the DELDI technology. Proceedings of Second International Conference on Power Electronics and Drive Systems
Narayanan EMS & Amaratunga G () Performance of LIGBTs built on SIMOX substrates using double epitaxial layer dielectric isolation technology. Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95
Narayanan EMS, Amaratunga G & Milne WI () A new double epitaxial layer dielectric isolation technology for HVICs. [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs
Narayanan EMS, Amaratunga G & Milne WI () A study of the resurf principle for thin epitaxial layer high voltage integrated circuits. Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics
Sankara Narayanan EM, Amaratunga GAJ, Milne WI & Huang Q () Performance of 200 V CMOS compatible auxiliary cathode lateral insulated gate transistors. [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
Sankara Narayanan EM, Amaratunga GAJ, Milne WI & Huang Q () CMOS compatible 250 V lateral insulated base transistors. [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
Huang Q, Sankara Narayanan EM, Kwan KW, Amaratunga G & Milne WI () A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure. Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.
Madathil SN () International Symposium on Power Semiconductors & ICs. International Symposium on Power Semiconductors and ICs

Preprints

Sheikhan A & Ekkanath Madathil SN (2024) Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET, MDPI AG.

Professional activities and memberships

Rolls-Royce/Royal Academy of Engineering Research Chair

School of Electrical and Electronic Engineering

School of Electrical and Electronic Engineering

Professor Shankar Madathil

Journal articles

Conference proceedings papers

Preprints

Links