Professor Chee Hing Tan

Journal articles

• Sheridan B, Collins X, Taylor-Mew J, White B, Ng JS & Tan CH (2024) An extremely low noise-equivalent power photoreceiver using high-gain InGaAs/AlGaAsSb APDs. Journal of Lightwave Technology. View this article in WRRO
• Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Huffaker DL, Tan CH & David JPR (2024) Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters, 124(25).
• Blain T, Shulyak V, Han IS, Hopkinson M, Ng JS & Tan CH (2024) Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection. IEEE Transactions on Electron Devices, 1-6.
• Taylor-Mew J, Collins X, White B, Tan CH & Ng JS (2024) Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes. IEEE Transactions on Electron Devices, 1-0.
• Cao Y, Blain T, Li L, Veitch JD, Collins XD, Ng JS & Tan CH (2024) GaAsSb/AlGaAsSb Avalanche Photodiode With High Gain-Linearity. IEEE Transactions on Electron Devices, 1-5.
• Hadfield RH, Leach J, Fleming F, Paul DJ, Tan CH, Ng JS, Henderson RK & Buller GS (2023) Single-photon detection for long-range imaging and sensing. Optica, 10(9), 1124-1124.
• Gandan S, Pinel LLG, Morales JSD, Ng JS, Tan CH & Ochalski T (2023) Recombination processes in MBE grown Al_0.85Ga_0.15As_0.56Sb_0.44. AIP Advances, 13(4), 045010-045010.
• Cao Y, Blain T, Taylor-Mew JD, Li L, Ng JS & Tan CH (2023) Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region. Applied Physics Letters, 122(5), 051103-051103.
• Lee HJ, Ali Gamel MM, Ker PJ, Jamaludin MZ, Wong YH, Yap KS, Willmott JR, Hobbs MJ, David JPR & Tan CH (2023) Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm. Materials Science in Semiconductor Processing, 153, 107135-107135.
• Petticrew J, Ji Y, Han IS, White B, Evirgen A, Reverchon J-L, Hopkinson M, Tan CH & Ng JS (2022) Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology. View this article in WRRO
• Osman T, Lim LW, Ng JS & Tan CH (2022) Fabrication of infrared linear arrays of InAs planar avalanche photodiodes. Optics Express, 30(12), 21758-21758.
• Taylor-Mew JD, Petticrew JD, Tan CH & Ng JS (2022) Simulation of Al_0.85Ga_0.15As_0.56Sb_0.44 avalanche photodiodes. Optics Express, 30(11), 17946-17946. View this article in WRRO
• Cao Y, Osman T, Clarke E, Patil PK, Ng JS & Tan CH (2022) A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage. Journal of Lightwave Technology. View this article in WRRO
• Taylor-Mew J, Shulyak V, White B, Tan CH & Ng JS (2021) Low excess noise of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiode from pure electron injection. IEEE Photonics Technology Letters, 33(20), 1155-1158. View this article in WRRO
• Liu Y, Yi X, Bailey NJ, Zhou Z, Rockett TBO, Lim LW, Tan CH, Richards RD & David JPR (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12(1).
• Jin X, Xie S, Liang B, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong D-S et al (2021) Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP. IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
• Petticrew JD, Dimler SJ, Tan CH & Ng JS (2020) Corrections to “Modeling Temperature Dependent Avalanche Characteristics of InP”. Journal of Lightwave Technology, 38(15), 4183-4183.
• Lim LW, Patil P, Marko I, Clarke EM, Sweeney S, Ng JS, David JPR & Tan CH (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology. View this article in WRRO
• Petticrew J, Dimler S, Tan CH & Ng JS (2019) Modeling temperature dependent avalanche characteristics of InP. Journal of Lightwave Technology. View this article in WRRO
• Sharpe MK, Marko IP, Duffy DA, England J, Schneider E, Kesaria M, Fedorov V, Clarke E, Tan CH & Sweeney SJ (2019) A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 126(12). View this article in WRRO
• Yi X, Xie S, Liang B, Lim LW, Cheong JS, Debnath MC, Huffaker DL, Tan CH & David JPR (2019) Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics. View this article in WRRO
• Lim L, Tan CH, Ng J, Petticrew J & Krysa A (2019) Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity. Journal of Lightwave Technology, 37(10). View this article in WRRO
• Tan CH, Velichko A, Lim LW & Ng JS (2019) Few-photon detection using InAs avalanche photodiodes. Optics Express, 27(4), 5835-5842. View this article in WRRO
• Hobbs M, Zhu C, Grainger M, Tan CH & Willmott J (2018) Quantitative traceable temperature measurement using novel thermal imaging camera. Optics Express, 26(19), 24904-24916. View this article in WRRO
• Yi X, Xie S, Liang B, Lim LW, Zhou X, Debnath MC, Huffaker DL, Tan CH & David JPR (2018) Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports, 8(1). View this article in WRRO
• Lu Q, Zhou X, Krysa A, Marshall A, Carrington P, Tan CH & Krier A (2018) InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C. Solar Energy Materials and Solar Cells, 179, 334-338. View this article in WRRO
• Baladés N, Sales DL, Herrera M, Tan CH, Liu Y, Richards RD & Molina SI (2018) Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM.. Nanoscale Research Letters, 13(1). View this article in WRRO
• Pinel LLG, Dimler SJ, Zhou X, Abdullah S, Zhang S, Tan CH & Ng JS (2018) Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes.. Optics Express, 26(3), 3568-3576. View this article in WRRO
• Hobbs M, Grainger MP, Zhu C, Tan CH & Willmott J (2018) Quantitative thermal imaging using single-pixel Si APD and MEMS mirror. Optics Express, 26(3), 3188-3198. View this article in WRRO
• Abdullah S, Tan CH, Zhou X, Zhang S, Pinel L & Ng AJS (2017) Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes. Optics Express, 25(26), 33610-33616. View this article in WRRO
• Petticrew JD, Dimler SJ, Zhou X, Morrison AP, Tan CH & Ng JS (2017) Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
• Zhou X, Pinel L, Dimler S, Zhang S, Ng J & Tan C (2017) Thin Al1−x GaxAs 0.56Sb 0.44 Diodes With Low Excess Noise. IEEE Journal of Selected Topics in Quantum Electronics, 24(2). View this article in WRRO
• Zhou X, Tan CH, Zhang S, Moreno M, Xie S, Abdullah S & Ng JS (2017) Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown. Royal Society Open Science, 4, 170071-170071. View this article in WRRO
• Zhou X, White B, Meng X, Zhang S, Gutierrez M, Robbins M, Rojas LG, Nelms N, Tan CH & Ng JS (2017) Proton radiation effect on InAs avalanche photodiodes. Optics Express, 25(3), 2818-2825. View this article in WRRO
• Velichko AV, Kudrynskyi ZR, Di Paola DM, Makarovsky O, Kesaria M, Krier A, Sandall IC, Tan CH, Kovalyuk ZD & Patanè A (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18). View this article in WRRO
• Xie S, Zhou X, Zhang S, Thomson DJ, Chen X, Reed GT, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product. Optics Express, 24(21), 24242-24247. View this article in WRRO
• Zhou X, Zhang S, David J, Ng JS & Tan CH (2016) Avalanche Breakdown Characteristics of Al₁–ₓ Gaₓ As₀.₅₆Sb₀.₄₄ Quaternary Alloys. IEEE Photonics Technology Letters, 28(22), 2495-2498. View this article in WRRO
• Auckloo A, Cheong JS, Meng X, Tan, CH, Ng JS, Krysa AB, Tozer RC & David JPR (2016) Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11(3). View this article in WRRO
• Butera S, Buller GS, Sandall I, Vines P & Tan CH (2016) Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. Electronics Letters, 52(5), 385-386.
• Meng X, Xie S, Zhou X, Calandri N, Sanzaro M, Tosi A, Tan CH & Ng JS (2016) InGaAs/InAlAs single photon avalanche diode for 1550 nm photons. Royal Society Open Science, 3(3), 150584-150584. View this article in WRRO
• White BS, Sandall I, Zhou X, Krysa AB, McEvan K, David J & Tan C (2016) High-Gain InAs Planar Avalanche Photodiodes. Journal of Lightwave Technology, 34(11), 2639-2644. View this article in WRRO
• White BS, Sandall IC, David JPR & Chee Hing Tan (2015) InAs Diodes Fabricated Using Be Ion Implantation. IEEE Transactions on Electron Devices, 62(9), 2928-2932. View this article in WRRO
• Shiyu Xie , Shiyong Zhang & Chee Hing Tan (2015) InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation. IEEE Photonics Technology Letters, 27(16), 1745-1748. View this article in WRRO
• Zhou X, Meng X, Krysa AB, Willmott JR, Ng JS & Tan CH (2015) InAs Photodiodes for 3.43 μm Radiation Thermometry. IEEE Sensors Journal, 15(10), 5555-5560. View this article in WRRO
• Hobbs MJ, Tan CH, Zhou X, David JPR, Willmott JR, Plis E & Krishna S (2015) InAs/GaSb Type-II Superlattice for Radiation Thermometry. IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
• Velichko AV, Patanè A, Capizzi M, Sandall IC, Giubertoni D, Makarovsky O, Polimeni A, Krier A, Zhuang Q & Tan CH (2015) H-tailored surface conductivity in narrow band gap In(AsN). Applied Physics Letters, 106(2), 022111-022111.
• Meng X, Tan CH, Dimler S, David JPR & Ng JS (2014) 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22(19), 22608-22615. View this article in WRRO
• Sandall IC, Bastiman F, White B, Richards R, Mendes D, David JPR & Tan CH (2014) Demonstration of InAsBi photoresponse beyond 3.5 μ m. Applied Physics Letters, 104(17).
• Gomes RB, Tan CH, Meng X, David JPR & Ng JS (2014) GaAs/Al₀.₈Ga₀.₂As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9. View this article in WRRO
• Zhou X, Hobbs MJ, White BS, David JPR, Willmott JR & Tan CH (2014) An InGaAlAs-InGaAs two-color photodetector for ratio thermometry. IEEE Transactions on Electron Devices, 61(3), 838-843. View this article in WRRO
• Sandall IC, Zhang S & Tan CH (2013) Linear array of InAs APDs operating at 2 µm.. Opt Express, 21(22), 25780-25787.
• Sandall IC, Ng JS, David JPR, Liu H & Tan CH (2013) Evaluation of InAs quantum dots on Si as optical modulator. Semiconductor Science and Technology, 28(9).
• Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2013) Temperature dependence of impact ionization in InAs.. Opt Express, 21(7), 8630-8637. View this article in WRRO
• Hobbs MJ, Tan CH & Willmott JR (2013) Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry. JOURNAL OF INSTRUMENTATION, 8.
• Xie J, Ng JS & Tan CH (2013) An InGaAs/AlAsSb avalanche photodiode with a small temperature coefficient of breakdown. IEEE Photonics Journal, 5(4). View this article in WRRO
• Ker PJ, David JPR & Tan CH (2012) Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes. Optics Express, 20(28), 29568-29576.
• Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) Effects of dead space on avalanche gain distribution of X-ray avalanche photodiodes. IEEE Transactions on Electron Devices, 59(4), 1063-1067. View this article in WRRO
• Zhou X, Ng S & Tan H (2012) A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon. Journal of Instrumentation, 7(8).
• Forsyth AJ, Jia C, Wu D, Tan CH, Dimler S, Yang Y & Bailey W (2012) Cryogenic converter for superconducting coil control. IET Power Electronics, 5(6), 739-746.
• Xie J, Xie S, Tozer RC & Tan CH (2012) Excess noise characteristics of thin AlAsSb APDs. IEEE Transactions on Electron Devices, 59(5), 1475-1479.
• Sandall I, Ng JS, David JPR, Tan CH, Wang T & Liu H (2012) 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics Express, 20(10), 10446-10452. View this article in WRRO
• Sandall I, Tan CH, Smith A & Gwilliam R (2012) Planar InAs photodiodes fabricated using He ion implantation. Optics Express, 20(8), 8575-8583. View this article in WRRO
• Hong BH, Rybchenko SI, Itskevich IE, Haywood SK, Tan CH, Vines P & Hugues M (2012) Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors. Journal of Applied Physics, 111(3).
• Ker PJ, Marshall ARJ, David JPR & Tan CH (2012) Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 310-313.
• Tan CH, Xie S & Xie J (2012) Low noise avalanche photodiodes incorporating a 40 nm ALASSB avalanche region. IEEE Journal of Quantum Electronics, 48(1), 36-41.
• Marshall ARJ, Ker PJ, Krysa A, David JPR & Tan CH (2011) High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.. Opt Express, 19(23), 23341-23349.
• Sandall IC, Xie S, Xie J & Tan CH (2011) High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes.. Opt Lett, 36(21), 4287-4289.
• Xie SY & Tan CH (2011) AlAsSb Avalanche Photodiodes with a Sub-mV/K Temperature Coefficient of Breakdown Voltage. IEEE J QUANTUM ELECT, 47(11), 1391-1395. View this article in WRRO
• Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2011) Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. IEEE J QUANTUM ELECT, 47(8), 1123-1128.
• Tan CH, Gomes RB, David JPR, Barnett AM, Bassford DJ, Lees JE & Ng JS (2011) Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors. IEEE T ELECTRON DEV, 58(6), 1696-1701.
• Marshall ARJ, Vines P, Ker PJ, David JPR & Tan CH (2011) Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K. IEEE J QUANTUM ELECT, 47(6), 858-864.
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2011) Noise, Gain, and Responsivity in Low-Strain Quantum Dot Infrared Photodetectors with up to 80 Dot-in-a-Well Periods. IEEE J QUANTUM ELECT, 47(5), 607-613.
• Gomes RB, Tan CH, Ker PJ, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. Journal of Instrumentation, 6(12).
• Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, Babazadeh N, Gomes RB, Vines P, David JPR, McKeag RD & Boe D (2011) Development of high temperature AlGaAs soft X-ray photon counting detectors. Journal of Instrumentation, 6(12).
• Wahra A, Tan CH, Xie J, Vines P & Beanland R (2011) Three-dimensional measurement of composition changes in InAs/GaAs quantum dots. Journal of Physics: Conference Series, 326(1).
• Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH, Babazadeh N & Gomes RB (2011) The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
• Tan CH, Vines P, Hobbs M, Anderson B, Hugues M & David J (2011) Implementation of an algorithmic spectrometer using Quantum Dot Infrared Photodetectors. Infrared Physics and Technology, 54(3), 228-232.
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2011) Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors. IEEE Journal of Quantum Electronics, 47(2), 190-197. View this article in WRRO
• Ong DSG, Ng JS, Goh YL, Tan CH, Zhang S & David JPR (2011) InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm. IEEE Transactions on Electron Devices, 58(2), 486-489.
• Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH & Gomez RB (2010) Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
• Barnett AM, Bassford DJ, Lees JE, Ng JS, Tan CH & David JPR (2010) Temperature dependence of AlGaAs soft X-ray detectors. NUCL INSTRUM METH A, 621(1-3), 453-455.
• Tan LJJ, Ong DSG, Ng JS, Tan CH, Jones SK, Qian YH & David JPR (2010) Temperature Dependence of Avalanche Breakdown in InP and InAlAs. IEEE J QUANTUM ELECT, 46(8), 1153-1157.
• Barnett AM, Lees JE, Bassford DJ, Ng JS, Tan CH & Gomes RB (2010) Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
• Hong BH, Rybchenko SI, Itskevich IE, Haywood SK, Tan CH, Vines P & Hugues M (2010) Modeling of intraband absorption for quantum dot-in-well structures with low computational cost. Journal of Physics: Conference Series, 242.
• Marshall ARJ, David JPR & Tan CH (2010) Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57(10), 2631-2638. View this article in WRRO
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2009) Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes. IEEE PHOTONIC TECH L, 21(13), 866-868. View this article in WRRO
• Helme JP, Houston PA & Tan CH (2009) Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s. IEEE J QUANTUM ELECT, 45(7), 833-839. View this article in WRRO
• Mun SCLT, Tan CH, Dimler SJ, Tan LJJ, Ng JS, Goh YL & David JPR (2009) A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes. IEEE J QUANTUM ELECT, 45(5-6), 566-571. View this article in WRRO
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. APPL PHYS LETT, 93(11).
• Lees JE, Bassford DJ, Ng JS, Tan CH & David JPR (2008) AlGaAs diodes for X-ray spectroscopy. NUCL INSTRUM METH A, 594(2), 202-205.
• Mun SCLT, Tan CH, Goh YL, Marshall ARJ & David JPR (2008) Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model. J APPL PHYS, 104(1).
• David JPR & Tan CH (2008) Material considerations for avalanche photodiodes (Invited paper). IEEE J SEL TOP QUANT, 14(4), 998-1009.
• Tan LJJ, Ng JS, Tan CH & David JPR (2008) Avalanche noise characteristics in submicron InP diodes. IEEE J QUANTUM ELECT, 44(3-4), 378-382.
• Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
• Tan CH, Ng JS, Rees GJ & David JPR (2007) Statistics of avalanche current buildup time in single-photon avalanche diodes. IEEE J SEL TOP QUANT, 13(4), 906-910.
• Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
• Ng JS, Tan CH, Rees GJ & David JPR (2007) Effects of dead space on breakdown probability in Geiger mode avalanche photodiode. J MOD OPTIC, 54(2-3), 353-360.
• Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK, Rees GJ, Hopkinson A, David JPR & Jones SK (2007) Avalanche multiplication in InAlAs. IEEE T ELECTRON DEV, 54(1), 11-16.
• Lau KS, Tan CH, Ng BK, Li KF, Tozer RC, David JPR & Rees GJ (2006) Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end. MEAS SCI TECHNOL, 17(7), 1941-1946.
• Goh YL, Ng JS, Tan CH, Ng WK & David JPR (2005) Excess noise measurement in In0.53Ga0.47As. IEEE PHOTONIC TECH L, 17(11), 2412-2414. View this article in WRRO
• Ng JS, Tan CH, David JPR & Rees GJ (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE J QUANTUM ELECT, 41(8), 1092-1096.
• Groves C, Tan CH, David JPR, Rees GJ & Hayat MM (2005) Exponential time response in analogue and Geiger mode avalanche photodiodes. IEEE T ELECTRON DEV, 52(7), 1527-1534. View this article in WRRO
• Ng WK, Tan CH, Houston PA & Krysa A (2005) High current InP/InGaAs evanescently coupled waveguide phototransistor. IEE P-OPTOELECTRON, 152(2), 140-144.
• Ng WK, Tan CH, Houston PA, Krysa A & Tahraoui A (2004) Surface passivation of InP/InGaAs heterojunction bipolar transistors. SEMICOND SCI TECH, 19(6), 720-724.
• Massey DJ, David JPR, Tan CH, Ng BK, Rees GJ, Robbins DJ & Herbert DC (2004) Impact ionization in submicron silicon devices. J APPL PHYS, 95(10), 5931-5933.
• Tan CH, Rees GJ, Houston PA, Ng JS, Ng WK & David JPR (2004) Temperature dependence of electron impact ionization in In0.53Ga0.47As. APPL PHYS LETT, 84(13), 2322-2324.
• Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. Journal of Modern Optics, 51(9-10), 1315-1321.
• Ng WK, Tan CH, David JPR, Houston PA, Yee M & Ng JS (2003) Temperature dependent low-field electron multiplication in In0.53Ga0.47As. APPL PHYS LETT, 83(14), 2820-2822.
• Yee M, Ng WK, David JPR, Houston PA, Tan CH & Krysa A (2003) Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE T ELECTRON DEV, 50(10), 2021-2026. View this article in WRRO
• Tan CH, Ghin R, David JPR, Rees GJ & Hopkinson M (2003) The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
• Ng JS, Tan CH, David JPR, Hill G & Rees GJ (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE T ELECTRON DEV, 50(4), 901-905. View this article in WRRO
• Tan CH, Hambleton PJ, David JPR, Tozer RC & Rees GJ (2003) Calculation of APD impulse response using a space- and time-dependent ionization probability distribution function. J LIGHTWAVE TECHNOL, 21(1), 155-159.
• Ng JS, Tan CH, David JPR & Rees GJ (2002) A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
• Ng JS, Tan CH, Ng BK, Hambleton PJ, David JPR, Rees GJ, You AH & Ong DS (2002) Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549. View this article in WRRO
• Tan CH, David JPR, Rees GJ, Tozer RC & Herbert DC (2001) Treatment of soft threshold in impact ionization. J APPL PHYS, 90(5), 2538-2543.
• Tan CH, David JPR, Plimmer SA, Rees GJ, Tozer RC & Grey R (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE T ELECTRON DEV, 48(7), 1310-1317. View this article in WRRO
• Tan CH, Clark JC, David JPR, Rees GJ, Plimmer SA, Tozer RC, Herbert DC, Robbins DJ, Leong WY & Newey J (2000) Avalanche noise measurement in thin Si p(+)-i-n(+) diodes. APPL PHYS LETT, 76(26), 3926-3928.
• Plimmer SA, Tan CH, David JPR, Grey R, Li KF & Rees GJ (1999) The effect of an electric-field gradient on avalanche noise. APPL PHYS LETT, 75(19), 2963-2965.
• Jin X, Lewis H, Yi X, Xie S, Liang B, Tian Q, Huffaker D, Tan CH & David J () Very Low Excess Noise Al₀.₇₅Ga₀.₂₅As₀.₅₆Sb₀.₄₄ Avalanche Photodiode. Optics Express.
• Meng X, Zhou X, Zhang S, Lees J, Tan CH & Ng JS () InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10(10), P10030-P10030. View this article in WRRO
• Ng JS, Meng X, Lees JE, Barnett A & Tan CH () Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9(08), T08005-T08005. View this article in WRRO

Conference proceedings papers

• Blain T, Basta G, Tan CH & Ng JS (2024) Indium arsenide electron avalanche photodiodes for femtowatt level infrared detection. Optical Sensing and Detection VIII (pp 69-69), 7 April 2024 - 12 April 2024.
• Tan CH, Blain T, Cao Y, Taylor-Mew J, White B, Collins X, Ng JS & David J (2024) Extremely low noise InAs and AlGaAsSb avalanche photodiodes for low photon detection in infrared wavelengths. Optical Sensing and Detection VIII (pp 70-70), 7 April 2024 - 12 April 2024.
• Tan CH, Blain T, Taylor-Mew J, Cao Y, White B, Collins X, Ng JS & David J (2024) Low photon detection using low-noise InAs and AlGaAsSb avalanche photodiodes. Infrared Technology and Applications L, 21 April 2024 - 26 April 2024.
• Collins X, Sheridan BS, Price DM, Cao Y, Blain T, Ng JS, Tan CH & White BS (2023) Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection. Optical Components and Materials XX, 28 January 2023 - 3 February 2023.
• Jin X, Xie S, Liang BL, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong DS et al (2022) Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. Optical Components and Materials XIX, 22 January 2022 - 28 February 2022.
• Collins X, White B, Cao Y, Osman T, Taylor-Mew J, Ng JS & Tan CH (2022) Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection. Optical Components and Materials XIX, 22 January 2022 - 28 February 2022.
• Yi X, Xie S, Liang BL, Lim LW, Huffaker DL, Tan CH & David JPR (2020) Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 21 September 2020 - 25 September 2020.
• Yi X, Xie S, Liang BL, Lim LW, Debnath MC, Huffaker DL, Tan CH & David JPR (2020) High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation). Optical Components and Materials XVII, 1 February 2020 - 6 February 2020.
• Ng JS & Tan CH (2018) AlGaAsSb Avalanche Photodiodes. 2018 IEEE Photonics Conference (IPC), 30 September 2018 - 4 October 2018.
• Pinel LLG, Tan CH & Ng JS (2018) Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
• Zhang S, Abdullah S, Tan CH & Ng JS (2018) Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation. Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
• Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) Progress in low light-level InAs detectors- towards Geiger-mode detection. Advanced Photon Counting Techniques XI View this article in WRRO
• Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) High sensitivity InAs photodiodes for mid-infrared detection. Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016. View this article in WRRO
• Zhou X, Xie S, Zhang S, Ng JS & Tan CH (2016) InGaAs/AlGaAsSb APD with over 200 GHz gain-bandwidth product. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
• Xie S, Zhou X, Zhang S, Ng JS & Tan CH (2016) Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
• Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. 2016 IEEE 6th International Conference on Photonics (ICP), 14 March 2016 - 16 March 2016. View this article in WRRO
• Tan CH, Sandall IC, Zhou X & Krishna S (2016) InAs-QDIP hybrid broadband infrared photodetector. MRS Advances, Vol. 1(48) (pp 3301-3306)
• Xie S, Zhou X, Zhang S, Ng JS, Tan CH & IEEE (2016) Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
• White BS, Sandall IC & Chee Hing Tan (2015) Planar InAs avalanche photodiodes. 2015 IEEE Photonics Conference (IPC), 4 October 2015 - 8 October 2015.
• Zhou X, Ng JS & Tan CH (2015) InAs photodiode for low temperature sensing. Sensors, Systems, and Next-Generation Satellites XIX View this article in WRRO
• Auckloo A, Tozer R, David J & Tan CH (2014) A low noise op-amp transimpedance amplifier for LIDAR applications. 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 7 December 2014 - 10 December 2014.
• Sandall I, White B & Chee Hing Tan (2014) InAs APD with solid state photomultiplier characteristics. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
• Sandall IC, Bastiman F, White B, Richards R, David J & Chee Hing Tan (2014) InAsBi photodiode operating in the MWIR. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
• White BS, Sandall I & Chee Hing Tan (2014) Planar InAs p-i-n photodiodes fabricated using ion implantation. 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
• Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) Demonstration of an InAsBi photodiode operating in the MWIR. Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
• Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate. EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
• Ker PJ, Tan CH & David JPR (2013) High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications. 4th International Conference on Photonics, ICP 2013 - Conference Proceeding (pp 78-80)
• Sandall I, Tan CH, Smith A & Gwilliam R (2012) Planar InAs photodiodes fabricated using He ion implantation. 2012 IEEE Photonics Conference, IPC 2012 (pp 165-166)
• Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product. Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 (pp 220-221)
• Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) InAs quantum dot photodetector operating at 1.3 μm grown on Silicon. 2012 IEEE Photonics Conference, IPC 2012 (pp 167-168)
• Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) GaAs p-i-n diodes for room temperature soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
• Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) Development of AlGaAs avalanche diodes for soft X-ray photon counting. IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
• Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) Avalanche gain distribution of X-ray avalanche photodiodes. IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
• Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) InAs avalanche photodiodes for X-ray detection. IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
• Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
• Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 276-277)
• Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
• Tan CH, Xie S & Xie J (2011) Thin AlAsSb avalanche regions with sub-mV/K temperature coefficients of breakdown voltage and very low excess noise factors. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 278-279)
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm based spectrometer. INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
• Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) Spectrally tunable quantum dot infrared detectors: Implementation of an algorithm-based spectrometer. 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 706-707)
• Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7838
• Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) Low excess noise APD with detection capabilities above 2 microns. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
• Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) High gain InAs electron-avalanche photodiodes for optical communication. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 409-412)
• Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
• Ng JS, Tan CH & David JPR (2010) Simulations of avalanche breakdown statistics: Probability and timing. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
• Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
• Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
• David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
• Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II
• Ng JS, Tan CH & David JPR (2009) Avalanche Photodiodes beyond 1.65μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
• Marshall ARJ, Tan CH & David JPR (2009) The development of extremely low noise InAs electron APDs for SWIR active or passive imaging. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
• Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
• Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) Low noise InAs avalanche photodiodes for high sensitivity FPAs. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
• Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) InAs electron avalanche photodiodes with single carrier type multiplication and extremely low excess noise. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp 296-297)
• Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) Infrared photodiodes based on Type-II strained layer superlattices. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
• Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) Multiple stack quantum dot infrared photodetectors. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7113
• Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
• Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
• Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
• Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
• Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
• Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
• Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
• Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
• Ng JS, Tan CH & David JPR (2006) Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer. IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
• Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
• Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
• Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
• Ng JS, Tan CH & David JPR (2004) A comparison of avalanche breakdown probabilities in semiconductor materials. JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
• Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80)
• Houston PA, Helme J, Ng WK & Tan CH (2004) InP/InGaAs heterojunction phototransitors for optoelectronic receivers. 2004 IEEE International Conference on Semiconductor Electronics, Proceedings (pp A1-A5)
• Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
• Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
• Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3953 (pp 95-102)
• Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
• Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
• Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
• David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
• Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 295-298)
• Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 230-235)

Patents

• Tan CH () High Gain-Bandwidth Product Avalanche Photodiode. (UK). Appl. 01 Jan 1970.
• Tan CH () Ultra Low Noise InAs Avalanche Photodiodes. GB0723858.7 (UK). Appl. 01 Jan 1970.

Software / Code

• Petticrew J, Dimler S, Tan C & Ng J Software for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.

Datasets

• Petticrew J, Dimler S, Tan C & Ng J Data for Paper: Modeling Temperature dependent Avalanche Characteristics of InP.
• Tan C, Velychko A, Lim L & Ng J Few-photon detection using InAs avalanche photodiodes.
• Abdullah S, Tan C, Ng J, Zhou X, Zhang S & Guerrero MM Data for RSOS paper: Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown.
• Zhou X, Pinel L, Dimler S, Zhang S, Ng J & Tan C Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise.

Other

• Tan PCH (2016) Guest Editorial: Selected Papers from the 29th Semiconductor and Integrated OptoElectronics (SIOE), 2015. IET Optoelectronics, 10(2), 33-33.
• Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2014) Temperature dependence of impact ionization in InAs: erratum. Optics Express, 22(21), 25923-25923.
• Sandall IC, Ng JS, Xie S, Ker PJ & Tan CH (2014) Temperature dependence of impact ionization in InAs: erratum.. Opt Express, 22(21), 25923.
• Lee KS, Prasad PN, Huyet G & Tan CH (2012) Feature issue introduction: Quantum dots for photonic applications. Optics Express, 20(10), 10721-10723.