Publications

A comprehensive list of our research publications in chronological order.

Off
2021
  • Y Cai, J I H Haggar, C Zhu, P Feng, J Bai and T Wang, Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth, ACS Appl. Electron. Mater, (2021), doi: 10.1021/acsaelm.0c00985
2020
  • P Coulon, P Feng, T Wang and P A Shields, Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods, Nanomaterials, 10, 2562 (2020), doi: 10.3390/nano10122562
  • J Bruckbauer et al, Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN, J. Phys. D: Appl. Phys. in press (2020), doi: 10.1088/1361-6463/abbc37
  • H Zeng, X Yu, H A Fonseka, G Boras, P Jurczak, T Wang, A M Sanchez and H Liu, Preferred growth direction of III–V nanowires on differently oriented Si substrates, Nanotechnology, Volume 31, Number 47 (2020), doi: 10.1088/1361-6528/abafd7
  • X Zhao, K Huang, J Bruckbauer, S Shen, C Zhu, P Fletcher, P Feng, Y Cai, J Bai, C Trager-Cowan, R W Martin and T Wang, Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon, Scientific Reports, 10, 12650 (2020), doi: 10.1038/s41598-020-69609-4
  • J I H Haggar, Y Cai, S S Ghataora, R M Smith, J Bai and T Wang, High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission, ACS Appl. Electron. Mater. 2020, doi: 10.1021/acsaelm.0c00399
  • Hiroshi Amano et al, The 2020 UV Emitter Roadmap, J. Phys. D: Appl. Phys, 2020, doi: 10.1088/1361-6463/aba64c
  • J Bai, Y Cai, P Feng, P Fletcher, C Zhu, Y Tian and T Wang, Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width, ACS Nano, 14, 6, 6906–6911 (2020), doi: 10.1021/acsnano.0c01180
  • Y Cai, S Shen, C Zhu, X Zhao, J Bai and T Wang, Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon, ACS Appl. Mater. Interfaces, Just Accepted Manuscript, (2020), doi: 10.1021/acsami.0c04890
  • N Poyiatzis, J Bai, R M Smith, M Athanasiou, S Ghataora and T Wang, Optical polarization properties of (11–22) semi-polar InGaN LEDs with a wide spectral range, Scientific Reports volume 10, Article number: 7191 (2020), doi: 10.1038/s41598-020-64196-w
  • P M Coulon, P Feng, B Damilano, S Vézian, T Wang and P A Shields, Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays, Scientific Reports, volume 10, Article number: 5642 (2020), doi: 10.1038/s41598-020-62539-1
  • C Trager-Cowan et al, Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope, Semicond. Sci. Technol. 35 054001 (2020), doi: 10.1088/1361-6641/ab75a5
  • M Athanasiou, P Papagiorgis, A Manoli, C Bernasconi, N Poyiatzis P M Coulon, P Shields M I Bodnarchuk, M V Kovalenko, T Wang and G Itskos, InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting, ACS Appl. Nano Mater. 3, 3, 2167-2175 (2020), doi: 10.1021/acsanm.9b02154
  • S Jiang, Y Cai, P Feng, S Shen, X Zhao, P Fletcher, V Esendag, K Lee and T Wang, Exploring an approach toward the intrinsic limits of GaN electronics, ACS Appl. Mater. Interfaces (2020), doi: 10.1021/acsami.9b19697
  • J Bai, Y Cai, P Feng, P Fletcher, X Zhao, C Zhu and T Wang, A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs), ACS Photonics, 7, 2, 411-415, (2020), doi: 10.1021/acsphotonics.9b01351
  • J Bruckbauer, C Trager-Cowan, B Hourahine, A Winkelmann, P Vennéguès, A Ipsen, X Yu, X Zhao, M J Wallace, P R Edwards, G Naresh-Kumar, M Hocker, S Bauer, R Müller, J Bai, K Thonke, T Wang and R W Martin, Luminescence behavior of semipolar (1011) InGaN/GaN “bow-tie” structures on patterned Si substrates, Journal of Applied Physics, 127, 035705 (2020), doi: 10.1063/1.5129049
2019
  • S Shen, X Zhao, X Yu, C Zhu, J Bai and T Wang, Semi‐Polar InGaN‐Based Green Light‐Emitting Diodes Grown on Silicon, Phys. Status Solidi A, (2019), 1900654, doi: 10.1002/pssa.201900654
  • C Trager-Cowan, A Alasmari, W Avis, J Bruckbauer, P R Edwards, B Hourahine, S Kraeusel, G Kusch, R Johnston, G Naresh-Kumar, R W Martin, M Nouf-Allehiani, E Pascal, L Spasevski, D Thomson, S Vespucci, P J Parbrook, M D Smith, J Enslin, F Mehnke, M Kneissl, C Kuhn, T Wernicke, S Hagedorn, A Knauer, V Kueller, S Walde, M Weyers, P M Coulon, P A Shields, Y Zhang, L Jiu, Y Gong, R M Smith, T Wang and A Winkelmann, Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films, Photonics Research, Vol. 7, Issue 11, pp. B73-B82 (2019), doi:10.1364/PRJ.7.000B73
  • Y Zhang, R M Smith, L Jiu, J Bai and T Wang, Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes, Scientific Reports, volume 9, Article number: 9735 (2019), doi: 10.1038/s41598-019-46292-8
  • J Bai, L Jiu, N Poyiatzis, P Fletcher, Y Gong and T Wang, Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates, Scientific Reports, volume 9, Article number: 9770 (2019), doi: 10.1038/s41598-019-46343-0
  • G Naresh-Kumar, J Bruckbauer, A Winkelmann, X Yu, B Hourahine, P R Edwards, T Wang, C Trager-Cowan and R W Martin, Determining GaN Nanowire Polarity and its Influence on Light Emission in the Scanning Electron Microscope, Nano Letters, doi: 10.1021/acs.nanolett.9b01054
  • Z A Syed, Y Hou, X Yu, S Shen, M Athanasiou, J Bai and T Wang, Ultra-Energy-Efficient Photoelectrode Using Microstriped GaN on Si, ACS Photonics, 6, 1302-1306 (2019), doi: 10.1021/acsphotonics.9b00478
  • Q Li, Z Tian, Y Zhang, Z Wang, Y Li, W Ding, T Wang and F Yun, 3D ITO-nanowire networks as transparent electrode for all-terrain substrate, Scientific Reports, volume 9, Article number: 4983 (2019), doi: 10.1038/s41598-019-41579-2
  • Y Cai, X Yu, S Shen, X Zhao, L Jiu, C Zhu, J Bai and T Wang, Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method, Semiconductor Science and Technology, Volume 34, Number 4 (2019), doi: 10.1088/1361-6641/ab08bf
  • N Poyiatzis, M Athanasiou, J Bai, Y Gong and T Wang, Monolithically integrated white light LEDs on (11–22) semi-polar GaN templates, Scientific Reports, Volume 9, 1383 (2019), doi: 10.1038/s41598-018-37008-5
  • Y Gong, L Jiu, J Bruckbauer, J Bai, R W Martin and T Wang, Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN, Scientific Reports, Volume 9, 986, (2019), doi: 10.1038/s41598-018-37575-7
2018
  • Q Li, Y Zhang, Z Wang, Y Li, W Ding, T Wang and F Yun, Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor, AIP Advances, 8, 115316 (2018); doi: 10.1063/1.5048622
  • Y Cai, C Zhu, L Jiu, Y Gong, X Yu, J Bai, V Esendag and T Wang, Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers, Materials (2018), 11(10), 1968; doi:10.3390/ma11101968
  • Y Cai, Y Gong, J Bai, X Yu, C Zhu, V Esendag, K B Lee and T Wang, Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices, IEEE Photonics Journal (2018), doi: 10.1109/JPHOT.2018.2867821
  • G Naresh-Kumar, D Thomson, Y Zhang, J Bai, L Jiu, X Yu, Y P Gong, R M Smith, T Wang and C Trager-Cowan, Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging, Journal of Applied Physics 124, 065301 (2018); doi: 10.1063/1.5042515
  • L Jiu, Y Gong and T Wang, Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire, Scientific Reports, Volume 8, Article number: 9898 (2018); doi: 10.1038/s41598-018-28328-7
  • Q Li, Y Zhang, L Feng, Z Wang, T Wang and F Yun, Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering, Nanotechnology 29 165708 (11pp) (2018) doi: 10.1088/1361-6528/aaafa7
  • C Brasser, J Bruckbauer, Y Gong, L Jiu, J Bai, M Warzecha, P R Edwards, T Wang and R W Martin, Cathodoluminescence studies of chevron features in semi-polar (112⎯⎯2) InGaN/GaN multiple quantum well structures, Journal of Applied Physics 123, 174502 (2018); doi: 10.1063/1.5021883
  • S Ghataora, R M Smith, M Athanasiou and T Wang, Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes with Nonradiative Förster Resonance Energy Transfer, ACS Photonics 5 (2), pp 642–647 (2018) doi: 10.1021/acsphotonics.7b01291
  • J Bai, YP Gong, Z Li, Y Zhang and T Wang, Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560nm, Solar Energy Materials and Solar Cells 175, 47-51, (2018) doi: 10.1016/j.solmat.2017.10.005
2017
  • Y Hou, Z Ahmed Syed, L Jiu, J Bai and T Wang, Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes, Appl. Phys. Lett. 111, 203901 (2017); doi: 10.1063/1.5001938
  • P M. Coulon, J R Pugh, M Athanasiou, G Kusch, E D Le Boulbar, A Sarua, R Smith, R W Martin, T Wang, M Cryan, D W E Allsopp and P A Shields, Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities, Optics Express, Vol. 25, Issue 23, pp. 28246-28257 (2017) doi: 10.1364/OE.25.028246
  • T Wang and Y Hou, Nanofabrication of III-Nitride Emitters for Solid-State Lighting, pages 31–65, Handbook of Solid-State Lighting and LEDs, Print ISBN: 978-1-4987-4141-5, eBook ISBN: 978-1-4987-4142-2, doi:10.1201/9781315151595-4
  • J Bruckbauer, Z Li, G Naresh-Kumar, M Warzecha, P R Edwards, L Jiu, Y Gong, J Bai, T Wang, C Trager-Cowan and R W Martin, Spatially-resolved optical and structural properties of semi-polar (112¯2) Al x Ga1−x N with x up to 0.56, Scientific Reports 7, Article number: 10804 (2017); doi:10.1038/s41598-017-10923-9
  • M Athanasiou, R M Smith, J Pugh, Y Gong, M J Cryan and T Wang, Monolithically multi-color lasing from an InGaN microdisk on a Si substrate, Scientific Reports 7, Article number: 10086 (2017), doi:10.1038/s41598-017-10712-4
  • B Xu, L Jiu, Y Gong, Y Zhang, L C Wang, J Bai and T Wang (2017), Advances Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire. AIP Advances 7, 045009 (2017); doi: 10.1063/1.4981137
  • Z Li, L Wang, L Jiu, J Bruckbauer, Y Gong, Y Zhang, J Bai, R. W. Martin and T Wang (2017), Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. Applied Physics Letters, 110 (9). 091102; doi: 10.1063/1.4977428
  • Z Li, L Jiu, Y Gong, L Wang, Y Zhang, J Bai and T Wang (2017), Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue. Applied Physics Letters, 110, 082103; doi:10.1063/1.4977094
  • M Athanasiou, R M Smith, S Ghataora and T Wang (2017), Polarized white light from hybrid organic/III-nitrides grating structures. Scientific Reports 7, Article number: 39677. doi:10.1038/srep39677
2016
  • T Wang (2016), Development of III-nitride nanostructures for low threshold lasing and semipolar GaN towards Yellow/Orange lasing. Photonics Conference (IPC), 2016 IEEE, doi: 10.1109/IPCon.2016.7831115
  • T Wang (2016), Semi-polar InGaN/GaN based long emission wavelength emitter for lighting and displays. Photonics Conference (IPC), 2016 IEEE, doi: 10.1109/IPCon.2016.7831088
  • Y Zhang, J Bai, Y Hou, X Yu, Y Gong, R M Smith and T Wang, (2016) Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates, Applied Physics Letters 109(24) Article number 241906 Dec 2016 doi:10.1063/1.4972403
  • Y Hou, X Yu, Z A Syed, S Shen, J Bai and T Wang (2016). GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting.. Nanotechnology, 27(45). doi:1088/0957-4484/27/45/455401
  • T Wang (2016). Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission. Semiconductor Science and Technology, 31(9), 093003. doi:1088/0268-1242/31/9/093003
  • Y Zhang, J A Huang, K H Li, D Bai, Y Wang, T Wang and H W Choi (2016). Influence of strain on emission from GaN-on-Si microdisks. Journal of Physics D: Applied Physics, 49(37), 375103. doi:1088/0022-3727/49/37/375103
  • Y Hou, Z A Syed, R Smith, M Athanasiou, Y Gong, X Yu and T Wang (2016). Enhanced water splitting with silver decorated GaN photoelectrode. Journal of Physics D: Applied Physics, 49(26), 265601. doi:1088/0022-3727/49/26/265601
  • Y Hou, J Bai, R Smith and T Wang (2016). A single blue nanorod light emitting diode. Nanotechnology, 27(20). doi:1088/0957-4484/27/20/205205
  • X Yu, Y Hou, S Shen, J Bai, Y Gong, Y Zhang and T Wang (2016). Semi-polar (11-22) GaN grown on patterned (113) Si substrate. physica status solidi (c), 13(5-6), 190-194. doi:1002/pssc.201510209
  • R Southern-Holland, M Halsall, T Wang and Y Gong (2016). Power density dependent photoluminescence spectroscopy and Raman mapping of semi-polar and polar InGaN/GaN multiple quantum well samples. physica status solidi (c), 13(5-6), 274-277. doi:1002/pssc.201510196
  • J Bai, M Athanasiou and T Wang (2016). Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells. physica status solidi (c), 13(5-6), 297-300. doi:1002/pssc.201510171
  • J Bai, M Athanasiou and T Wang (2016). Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells. Solar Energy Materials and Solar Cells, 145, 226-230. doi:1016/j.solmat.2015.10.026
  • Y Zhang, J Bai, Y Hou, R M Smith, X Yu, Y Gong and T Wang (2016). Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template. AIP Advances, 6(2), 025201. doi:1063/1.4941444
  • Y Zhang, R M Smith, Y Hou, B Xu, Y Gong, J Bai and T Wang (2016). Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells. Applied Physics Letters, 108(3), 031108. doi:1063/1.4940396
  • Y Zhang, C Feng, T Wang and H W Choi (2016). GaN hemispherical micro-cavities. Applied Physics Letters, 108(3), 031110. doi:1063/1.4940375
  • Z Zhuang, X Guo, B Liu, F Hu, J Dai, Y Zhang and R Zhang (2016). Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale. Nanotechnology, 27(1), 015301. doi:1088/0957-4484/27/1/015301
2015
  • J Bai, B Xu, F G Guzman, K Xing, Y Gong, Y Hou and T Wang (2015). (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates. Applied Physics Letters, 107(26), 261103. doi:1063/1.4939132
  • M Athanasiou, R M Smith, Y Hou, Y Zhang, Y Gong and T Wang (2015). Enhanced polarization of (11–22) semi-polar InGaN nanorod array structure. Applied Physics Letters, 107(14), 141110. doi:1063/1.4932951
  • R M Smith, M Athanasiou, J Bai, B Liu and T Wang (2015). Enhanced non-radiative energy transfer in hybrid III-nitride structures. Applied Physics Letters, 107(12), 121108. doi:1063/1.4931760
  • B Humphreys, T Zhang, C Griffiths and T Wang (2015). Development of high quality and low defect density semipolar and non-polar GaN templates. In 2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013 (pp. 52-55). doi:1109/SSLCHINA.2013.7177312
  • J Bai, X Yu, Y Gong, Y N Hou, Y Zhang and T Wang (2015). Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates. Semiconductor Science and Technology, 30(6), 065012. doi:1088/0268-1242/30/6/065012
  • H Tang, B Liu and T Wang (2015). Influence of piezoelectric fields on InGaN based intermediate band solar cells. Journal of Physics D: Applied Physics, 48(2), 025101. doi:1088/0022-3727/48/2/025101
  • B Xu, X Yu, Y Gong, K Xing, J Bai and T Wang (2015). Study of high-quality (11−22) semi-polar GaN grown on nanorod templates. physica status solidi (b), 252(5), 1079-1083. doi:1002/pssb.201451490
  • Y Gong, K Xing, B Xu, X Yu, Z Li, J Bai and T Wang (2015). (Invited) High Efficiency Green-Yellow Emission from InGaN/GaN Quantum Well Structures Grown on Overgrown Semi-Polar (11-22) GaN on Regularly Arrayed Micro-Rod Templates. In ECS Transactions 66 (pp. 151-155). doi:10.1149/06601.0151ecst
2014
  • B Liu, R Smith, M Athanasiou, X Yu, J Bai and T Wang (2014). Temporally and spatially resolved photoluminescence investigation of (112¯2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates. Applied Physics Letters, 105(26), 261103. doi:1063/1.4905191
  • J Benton, J Bai and T Wang (2014). Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting. Applied Physics Letters, 105(22), 223902. doi:1063/1.4903246
  • M Athanasiou, R Smith, B Liu and T Wang (2014). Room temperature continuous–wave green lasing from an InGaN microdisk on silicon. Scientific Reports, 4. doi:1038/srep07250
  • R M Smith, B Liu, J Bai and T Wang (2014). Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films. Applied Physics Letters, 105(17), 171111. doi:1063/1.4901024
  • T Wang (2014). MOCVD growth of nitride DBRs for optoelectronics. In A. H. W. Choi (Ed.), Handbook of Optical Microcavities (pp. 526 pages). CRC Press.
  • Y Zhang, Z Ma, X Zhang, T Wang and H W Choi (2014). Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si. Applied Physics Letters, 104(22), 221106. doi:1063/1.4881183
  • T Kim, B Liu, R Smith, M Athanasiou, Y Gong and T Wang (2014). Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells. Applied Physics Letters, 104(16). doi:1063/1.4873161
  • J Bai, C C Yang, M Athanasiou and T Wang (2014). Efficiency enhancement of InGaN/GaN solar cells with nanostructures. Applied Physics Letters, 104(5), 051129. doi:1063/1.4864640
  • Y Hou, P Renwick, B Liu, J Bai and T Wang (2014). Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold. Scientific Reports, 4. doi:1038/srep05014
  • J Benton, J Bai and T Wang (2014). Nanoporous GaN for enhanced solar hydrogen production. In Proceedings of SPIE – The International Society for Optical Engineering 9176. doi:10.1117/12.2061104

Related information

Centres of excellence

The University's cross-faculty research centres harness our interdisciplinary expertise to solve the world's most pressing challenges.

Centres of excellence