Recently published in ACS Photonics, “A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)” demonstrates a completely different approach which allows us to achieve μLEDs with a dimension of down to 3.6 μm and an interpitch of down to 2 μm.
The invention is based on an overgrowth on prepatterned templates with SiO2 microhole arrays, thus eliminating all the drawbacks of the conventional μLED fabrication approaches.
As a result, a record peak EQE of 6% at ∼515 nm in the green spectral regions has been achieved on our μLED array bare chips. A high luminance of >107 cd/m2 has been obtained. Temperature-dependent measurements show an internal quantum efficiency of 28% for our μLED array structure.
Read the full paper on ACS Photonics
